Support glass substrate and laminated substrate using same

ABSTRACT

A support glass substrate of the present invention is a support glass substrate for supporting a substrate to be processed, the support glass substrate including lithium aluminosilicate-based glass, having a content of Li 2 O of from 0.02 mol % to 25 mol % in a glass composition, and having an average linear thermal expansion coefficient within a temperature range of from 30° C. to 380° C. of 38×10 −7 /° C. or more and 160×10 −7 /° C. or less.

TECHNICAL FIELD

The present invention relates to a support glass substrate forsupporting a substrate to be processed and a laminated substrate usingthe same, and more specifically, to a support glass substrate to be usedfor supporting a substrate to be processed in a manufacturing processfor a semiconductor package (semiconductor device), and a laminatedsubstrate using the same.

BACKGROUND ART

Portable electronic devices, such as a cellular phone, a notebook-sizepersonal computer, and a smartphone, are required to be downsized andreduced in weight. Along with this, a mounting space for semiconductorchips to be used in those electronic devices is strictly limited, andthere is a problem of high-density mounting of the semiconductor chips.In view of this, in recent years, there has been an attempt to performhigh-density mounting of a semiconductor package by a three-dimensionalmounting technology, that is, by laminating semiconductor chips on topof another and connecting the semiconductor chips through wiring.

In addition, a conventional wafer level package (WLP) is manufactured byforming bumps into a wafer shape and dicing the wafer into chips.However, the conventional WLP has problems in that it is difficult toincrease the number of pins, and chipping and the like of semiconductorchips are liable to occur because the semiconductor chips are mountedunder a state in which the back surfaces thereof are exposed.

Accordingly, as a new WLP, a fan-out type WLP has been proposed. In thefan-out type WLP, it is possible to increase the number of pins, andchipping and the like of semiconductor chips can be prevented byprotecting end portions of the semiconductor chips.

CITATION LIST

-   Patent Literature 1: WO 2019/150654 A1-   Patent Literature 2: WO 2020/013984 A1

SUMMARY OF INVENTION Technical Problem

Incidentally, the fan-out type WLP includes the step of molding aplurality of semiconductor chips with a sealing material of a resin, tothereby form a substrate to be processed, followed by arranging wiringon one surface of the substrate to be processed, the step of formingsolder bumps, and the like.

Those steps involve heat treatment at about 200° C. to about 300° C.,and hence there is a risk in that the sealing material may be deformed,and a dimensional change may occur in the substrate to be processed.When the substrate to be processed changes in dimension, it becomesdifficult to arrange wiring at high density on one surface of thesubstrate to be processed, and it is also difficult to form the solderbumps accurately.

It is effective to use a glass substrate as a supporting substrate forpreventing the substrate to be processed from changing in dimension.However, even through use of the glass substrate, the substrate to beprocessed changes in dimension in some cases.

In addition, when the WLP is dropped onto the ground or the like bymistake at the time of manufacturing, the expensive substrate to beprocessed becomes unusable in some cases owing to breakage of thesupport glass substrate. In order to avoid such situations, it isimportant to increase the strength of the support glass substrate.

A promising glass substrate having high strength is lithiumaluminosilicate-based glass (see Patent Literature 1). The lithiumaluminosilicate-based glass generally has a higher Young's modulus thanaluminoborosilicate-based glass, and hence has high mechanical strength,which leads to a high possibility that the glass is hardly broken at thetime of dropping.

The present invention has been made in view of the above-mentionedcircumstances, and a technical object of the present invention is toprovide a support glass substrate, which is less liable to cause adimensional change of a substrate to be processed and is less liable tobe broken at the time of dropping, and a laminated substrate using thesame.

Solution to Problem

The inventors of the present invention have repeated variousexperiments, and as a result, have found that the above-mentionedtechnical object can be achieved by using lithium aluminosilicate-basedglass as a support glass substrate and restricting a thermal expansioncoefficient thereof to fall within a predetermined range. Thus, thefinding is proposed as the present invention. That is, according to oneembodiment of the present invention, there is provided a support glasssubstrate for supporting a substrate to be processed, the support glasssubstrate comprising lithium aluminosilicate-based glass, having acontent of Li₂O of from 0.02 mol % to 25 mol % in a glass composition,and having an average linear thermal expansion coefficient within atemperature range of from 30° C. to 380° C. of 38×10⁻⁷/° C. or more and160×10⁻⁷/° C. or less. Herein, the “lithium aluminosilicate-based glass”refers to glass comprising SiO₂, Al₂O₃, and Li₂O in the glasscomposition. The “average linear thermal expansion coefficient within atemperature range of from 30° C. to 380° C.” refers to a value measuredfor an average thermal expansion coefficient with a dilatometer.

In addition, it is preferred that the support glass substrate forsupporting a substrate to be processed according to the one embodimentof the present invention comprise as the glass composition, in terms ofmol %, 50% to 80% of SiO₂, 4% to 25% of Al₂O₃, 0% to 16% of B₂O₃, 0.9%to 15% of Li₂O, more than 0% to 21% of Na₂O, 0% to 15% of K₂O, 0% to 10%of MgO, 0% to 10% of ZnO, and 0% to 15% of P₂O₅.

In addition, it is preferred that the support glass substrate accordingto the one embodiment of the present invention satisfy the followingrelationship: a molar ratio([Na₂O]?[Li₂O])/([Al₂O₃]+[B₂O₃]+[P₂O₅])≤1.50. Herein, the “[Na₂O]”refers to the content of Na₂O in terms of mol %. The “[Li₂O]” refers tothe content of Li₂O in terms of mol %. The “[Al₂O₃]” refers to thecontent of Al₂O₃ in terms of mol %. The “[B₂O₃]” refers to the contentof B₂O₃ in terms of mol %. The “[P₂O₅]” refers to the content of P₂O₅ interms of mol %. The “([Na₂O]?[Li₂O])/([Al₂O₃]+[B₂O₃]+[P₂O₅])” refers toa value obtained by dividing a value obtained by subtracting the contentof Li₂O from the content of Na₂O by the total content of Al₂O₃, B₂O₃,and P₂O₅.

In addition, it is preferred that the support glass substrate accordingto the one embodiment of the present invention satisfy the followingrelationship: a molar ratio([B₂O₃]+[Na₂O]?[P₂O₅])/([Al₂O₃]+[Li₂O])≥0.001. Herein, the[Na₂O]?[Li₂O])/([Al₂O₃]+[B₂O₃]+[P₂O₅]) refers to a value obtained bydividing a value obtained by subtracting the content of Li₂O from thecontent of Na₂O by the total content of Al₂O₃, B₂O₃, and P₂O₅.

In addition, it is preferred that the support glass substrate accordingto the one embodiment of the present invention comprise 12 mol % or moreof ([Li₂O]+[Na₂O]+[K₂O]), and satisfy the following relationship:[SiO₂]+1.2×[P₂O₅]-3×[Al₂O₃]-2×[Li₂O]-1.5×[Na₂O]—[K₂O]—[B₂O₃]-40%.Herein, the “[K₂O]” refers to the content of K₂O in terms of mol %. The“[SiO₂]” refers to the content of SiO₂ in terms of mol %. The“([Li₂O]+[Na₂O]+[K₂O])” refers to the total content of Li₂O, Na₂O, andK₂O. The “[SiO₂]+1.2×[P₂O₅]-3×[Al₂O₃]-2×[Li₂O]-1.5×[Na₂O]—[K₂O]—[B₂O₃]”refers to a value obtained by subtracting a content three times as largeas the content of Al₂O₃, a content two times as large as the content ofLi₂O, a content 1.5 times as large as the content of Na₂O, the contentof K₂O, and the content of B₂O₃ from the sum of the content of SiO₂ anda content 1.2 times as large as the content of P₂O₅.

In addition, it is preferred that the support glass substrate accordingto the one embodiment of the present invention have a temperature at aviscosity at high temperature of 10^(2.5) dPa·s of less than 1,660° C.Herein, the “temperature at a viscosity at high temperature of 10^(2.5)dPa·s” may be measured, for example, by a platinum sphere pull upmethod.

In addition, it is preferred that the support glass substrate accordingto the one embodiment of the present invention comprise overflow-mergedsurfaces in a middle portion thereof in a sheet thickness direction,that is, the support glass substrate be formed by an overflow down-drawmethod. Herein, the “overflow down-draw method” is a method involvingcausing molten glass to overflow from both sides of forming bodyrefractory, and subjecting the overflowing molten glasses to down-drawdownward while the molten glasses are merged at the lower end of theforming body refractory, to thereby manufacture a glass substrate.

In addition, it is preferred that the support glass substrate accordingto the one embodiment of the present invention have a mass loss of 100.0mg/cm² or less per unit surface area when immersed in a 5 mass % HClaqueous solution warmed to 80° C. for 24 hours.

In addition, it is preferred that the support glass substrate accordingto the one embodiment of the present invention have a mass loss of 5.0mg/cm² or less per unit surface area when immersed in a 5 mass % NaOHaqueous solution warmed to 80° C. for 6 hours.

In addition, it is preferred that the support glass substrate accordingto the one embodiment of the present invention comprise a compressivestress layer in a glass surface thereof. As a method of increasing thestrength of a glass substrate, there is known a method involvingsubjecting the glass substrate to chemical tempering treatment (seePatent Literature 2). Moreover, as a method of increasing the strengthof a tempered glass substrate, it is effective to increase the depth oflayer of a compressive stress layer. Specifically, when a laminatedsubstrate is dropped onto the ground and collides therewith, protrusionson the ground penetrate into the support glass substrate to reach atensile stress layer, which may lead to the breakage of the supportglass substrate. In view of the foregoing, when the depth of layer ofthe compressive stress layer is increased, the protrusions on the groundare less liable to reach the tensile stress layer, and thus the breakageprobability of the support glass substrate can be reduced.

In addition, according to one embodiment of the present invention, thereis provided a support glass substrate, preferably comprising acompressive stress layer in a glass surface thereof and comprising as aglass composition, in terms of mol %, 50% to 80% of SiO₂, 4% to 25% ofAl₂O₃, 0% to 16% of B₂O₃, 0.9% to 15% of Li₂O, more than 0% to 21% ofNa₂O, 0% to 15% of K₂O, 0% to 10% of MgO, 0% to 10% of ZnO, and 0% to15% of P₂O₅.

In addition, in the support glass substrate according to the embodimentsof the present invention, it is preferred that the compressive stresslayer have a compressive stress value of from 165 MPa to 1,000 MPa on anoutermost surface. Herein, the “compressive stress value on theoutermost surface” and the “depth of layer” each refer to a valuemeasured based on a retardation distribution curve observed, forexample, with a scattered light photoelastic stress meter SLP-1000(manufactured by Orihara Industrial Co., Ltd.). Moreover, the “depth oflayer” refers to a depth at which the stress value becomes zero. Incalculation of the stress characteristics, the refractive index and theoptical elastic constant of each measurement sample are set to 1.51 and30.1 [(nm/cm)/MPa], respectively.

In addition, in the support glass substrate according to the embodimentsof the present invention, it is preferred that the compressive stresslayer have a depth of layer of from 50 μm to 200 μm. Lithiumaluminosilicate glass is advantageous in obtaining a large depth oflayer. In particular, when a glass substrate comprising the lithiumaluminosilicate glass is immersed in a molten salt containing NaNO₃ toion-exchange a Li ion in the glass with a Na ion in the molten salt, atempered glass substrate having a large depth of layer can be obtained.

In addition, it is preferred that the support glass substrate accordingto the embodiments of the present invention comprise a compressivestress layer in a glass surface thereof, comprise, as the glasscomposition, 17 mol % or more of Al₂O₃, 1 mol % or more of P₂O₅, and 12mol % or more of ([Li₂O]+[Na₂O]+[K₂O]), and satisfy the followingrelationship:[SiO₂]+1.2×[P₂O₅]-3×[Al₂O₃]-2×[Li₂O]-1.5×[Na₂O]—[K₂O]—[B₂O₃]≥−20 mol %.

In addition, it is preferred that the support glass substrate accordingto the embodiments of the present invention comprise a compressivestress layer in a glass surface thereof and have a stress profile havingat least a first peak, a second peak, a first bottom, and a secondbottom in a thickness direction.

In addition, it is preferred that the support glass substrate accordingto the embodiments of the present invention have a wafer shape or asubstantially disc shape having a diameter of from 100 mm to 500 mm,have a sheet thickness of less than 2.0 mm, have a total thicknessvariation (TTV) of 5 μm or less, and have a warpage level of 60 μm orless. Herein, the “total thickness variation (TTV)” refers to adifference between the maximum thickness and the minimum thickness ofthe entire support glass substrate, and may be measured with, forexample, SBW-331ML/d manufactured by Kobelco Research Institute, Inc.The “warpage level” refers to the total of the absolute value of themaximum distance between the highest point and the least squares focalplane of the entire support glass substrate, and the absolute value ofthe maximum distance between the lowest point and the least squaresfocal plane thereof, and may be measured with, for example, a Bow/Warpmeasurement device SBW-331M/Ld manufactured by Kobelco ResearchInstitute, Inc.

In addition, it is preferred that the support glass substrate accordingto the embodiments of the present invention have a substantiallyrectangular shape of □200 mm or more, have a sheet thickness of 1.0 mmor more, and have a total thickness variation (TTV) of 30 μm or less.

In addition, it is preferred that the support glass substrate accordingto the embodiments of the present invention have a corner angle of from89.0° to 91.0° when seen from above.

In addition, it is preferred that the support glass substrate accordingto the embodiments of the present invention comprise a positioningportion in an outer peripheral portion thereof, and it is more preferredthat the positioning portion have any one of a notch structure, achamfer structure, and a cutout structure.

According to one embodiment of the present invention, there is provideda laminate, preferably comprising at least a substrate to be processedand a support glass substrate for supporting the substrate to beprocessed, wherein the support glass substrate is the above-mentionedsupport glass substrate. It is preferred that the substrate to beprocessed comprise at least a semiconductor chip molded with a sealingmaterial.

According to one embodiment of the present invention, there is provideda method of manufacturing a semiconductor package, preferably comprisingthe steps of: preparing a laminate comprising at least a substrate to beprocessed and a support glass substrate for supporting the substrate tobe processed; and subjecting the substrate to be processed to processingtreatment, wherein the support glass substrate is the above-mentionedsupport glass substrate.

In addition, in the method of manufacturing a semiconductor packageaccording to the one embodiment of the present invention, it ispreferred that the step of subjecting the substrate to be processed toprocessing treatment comprise arranging wiring on one surface of thesubstrate to be processed.

In addition, in the method of manufacturing a semiconductor packageaccording to the one embodiment of the present invention, it ispreferred that the step of subjecting the substrate to be processed toprocessing treatment comprise forming a solder bump on one surface ofthe substrate to be processed.

According to one embodiment of the present invention, there is provideda glass substrate, comprising as a glass composition, in terms of mol %,50% to 65% of SiO₂, 8% to 25% of Al₂O₃, 0% to 10% of B₂O₃, 5.1% to 20%of Li₂O, more than 10% to 16.1% of Na₂O, 0% to 15% of K₂O, 0.01% to 3%of MgO, 0% to 10% of CaO, and 0.01% to 10% of ZrO₂, and having a Young'smodulus of 80 GPa or more. Herein, the “Young's modulus” refers to avalue calculated by a method in conformity with JIS R1602-1995 “Testingmethods for elastic modulus of fine ceramics.”

In addition, according to one embodiment of the present invention, thereis provided a glass substrate, comprising as a glass composition, interms of mol %, 50% to 65% of SiO₂, 8% to 18% of Al₂O₃, 0% to 10% ofB₂O₃, 20% to 25% of Li₂O, 0.01% to 10% of Na₂O, 0% to 15% of K₂O, 0% to10% of MgO, 0.01% to 10% of CaO, and 0% to 10% of ZrO₂, having a Young'smodulus of 85 GPa or more, and having a fracture toughness K_(1C) of0.80 MPa·m^(0.5) or more. Herein, the “fracture toughness K_(1C)” refersto a value calculated by a method in conformity with JIS R1607-2015“Testing methods for fracture toughness of fine ceramics at roomtemperature.”

According to one embodiment of the present invention, there is provideda glass substrate, comprising as a glass composition, in terms of mol %,64% to 76% of SiO₂, 4% to 15% of Al₂O₃, 4% to 16% of B₂O₃, 0.1% to 14%of Li₂O, 0.01% to 14% of Na₂O, 0% to 15% of K₂O, 0% to 7% of MgO, 0% to7% of CaO, 0% to 7% of SrO, 0% to 7% of BaO, and 0% to 10% of ZrO₂,having a Young's modulus of 60 GPa or more, and having an average linearthermal expansion coefficient within a temperature range of from 30° C.to 380° C. of 38×10⁻⁷/° C. or more and 85×10⁻⁷/° C. or less.

In addition, according to one embodiment of the present invention, thereis provided a glass substrate, comprising as a glass composition, interms of mol %, 64% to 76% of SiO₂, 4% to 15% of Al₂O₃, 4% to 16% ofB₂O₃, 0.1% to 14% of Li₂O, 0.01% to 14% of Na₂O, 0% to 15% of K₂O, 0.01%to 7% of MgO, 0.01% to 7% of CaO, 0% to 7% of SrO, 0% to 7% of BaO, and0% to 10% of ZrO₂, having a Young's modulus of 60 GPa or more, andhaving an average linear thermal expansion coefficient within atemperature range of from 30° C. to 380° C. of 38×10⁻⁷/° C. or more and85×10⁻⁷/° C. or less.

In addition, according to one embodiment of the present invention, thereis provided a glass substrate, comprising as a glass composition, interms of mol %, 64% to 76% of SiO₂, 4% to 15% of Al₂O₃, 4% to 16% ofB₂O₃, 0.1% to 14% of Li₂O, 0.01% to 14% of Na₂O, 0% to 15% of K₂O, 0% to7% of MgO, 0% to 7% of CaO, 0.01% to 7% of SrO, 0% to 7% of BaO, and 0%to 10% of ZrO₂, having a Young's modulus of 60 GPa or more, and havingan average linear thermal expansion coefficient within a temperaturerange of from 30° C. to 380° C. of 38×10⁻⁷/° C. or more and 85×10⁻⁷/° C.or less.

In addition, according to one embodiment of the present invention, thereis provided a glass substrate, comprising as a glass composition, interms of mol %, 64% to 76% of SiO₂, 4% to 15% of Al₂O₃, 4% to 16% ofB₂O₃, 0.1% to 14% of Li₂O, 0.01% to 14% of Na₂O, 0% to 15% of K₂O, 0.01%to 7% of MgO, 0.01% to 7% of CaO, 0.01% to 7% of SrO, 0% to 7% of BaO,and 0% to 10% of ZrO₂, having a Young's modulus of 60 GPa or more, andhaving an average linear thermal expansion coefficient within atemperature range of from 30° C. to 380° C. of 38×10⁻⁷/° C. or more and85×10⁻⁷/° C. or less.

In addition, according to one embodiment of the present invention, thereis provided a glass substrate, comprising as a glass composition, interms of mol %, 64% to 76% of SiO₂, 4% to 15% of Al₂O₃, 4% to 16% ofB₂O₃, 1.5% to 8.5% of Li₂O, 0.01% to 14% of Na₂O, 0% to 15% of K₂O,0.01% to 7% of MgO, 0.01% to 7% of CaO, 0.01% to 7% of SrO, 0% to 7% ofBaO, and 0% to 10% of ZrO₂, having a Young's modulus of 60 GPa or more,and having an average linear thermal expansion coefficient within atemperature range of from 30° C. to 380° C. of 38×10⁻⁷/° C. or more and85×10⁻⁷/° C. or less.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a conceptual perspective view for illustrating an example of alaminated substrate of the present invention.

FIG. 2 are conceptual sectional views for illustrating a manufacturingprocess for a fan-out type WLP.

FIG. 3 are conceptual sectional views for illustrating a step ofthinning a substrate to be processed through use of a support glasssubstrate as a backgrind substrate.

FIG. 4 is an explanatory view for illustrating an example of a stressprofile having a first peak, a second peak, a first bottom, and a secondbottom.

FIG. 5 is another explanatory view for illustrating an example of astress profile having a first peak, a second peak, a first bottom, and asecond bottom.

DESCRIPTION OF EMBODIMENTS

A support glass substrate of the present invention comprises lithiumaluminosilicate-based glass and has a content of Li₂O of from 0.02 mol %to 25 mol % in a glass composition. Li₂O is a component that reduces aviscosity at high temperature to improve meltability and formability,and is also a component that increases a Young's modulus and a fracturetoughness K₁₀. In addition, Li₂O is a component required for increasinga thermal expansion coefficient. Further, Li₂O is an ion exchangecomponent, and is particularly an essential component for obtaining alarge depth of layer through ion exchange between a Li ion in the glassand a Na ion in a molten salt. Meanwhile, when the content of Li₂O istoo large, the devitrification property of the glass is increased, withthe result that it becomes difficult to obtain transparent glass. Inaddition, a manufacturing cost also rises. Accordingly, a suitable lowerlimit of the content range of Li₂O is 0.02 mol % or more, 0.03 mol % ormore, 0.04 mol % or more, 0.05 mol % or more, 0.1 mol % or more, 0.2 mol% or more, 0.3 mol % or more, 0.4 mol % or more, 0.5 mol % or more, 0.9mol % or more, 1 mol % or more, 1.5 mol % or more, 2 mol % or more, 3mol % or more, 4 mol % or more, 4.5 mol % or more, 4.9 mol % or more, 5mol % or more, 5.1 mol % or more, 5.2 mol % or more, 5.5 mol % or more,6.5 mol % or more, 7 mol % or more, 7.3 mol % or more, 7.5 mol % ormore, or 7.8 mol % or more, particularly 8 mol % or more. When theYoung's modulus or the fracture toughness K_(1C) is preferentiallyincreased, the content of Li₂O is 15% or more, particularly 20% or more.Accordingly, a suitable upper limit of the content range of Li₂O is 25mol % or less, 24 mol % or less, 23 mol % or less, 22 mol % or less, 21mol % or less, 20.5 mol % or less, 20.1 mol % or less, 20 mol % or less,19.9 mol % or less, 19.8 mol % or less, 19 mol % or less, 18 mol % orless, 17 mol % or less, 16 mol % or less, 15 mol % or less, 13 mol % orless, 12 mol % or less, 11.5 mol % or less, 11 mol % or less, 10.5 mol %or less, less than 10 mol %, 9.9 mol % or less, 9 mol % or less, or 8.9mol % or less, particularly 8.5% or less.

It is preferred to restrict the thermal expansion coefficient of thesupport glass substrate so as to match with the thermal expansioncoefficient of a substrate to be processed. Specifically, when the ratioof a semiconductor chip is low and the ratio of a sealing material ishigh in the substrate to be processed, it is preferred to increase thethermal expansion coefficient of the support glass substrate. Incontrast, when the ratio of the semiconductor chip is high and the ratioof the sealing material is low in the substrate to be processed, it ispreferred to reduce the thermal expansion coefficient of the supportglass substrate. Accordingly, the average linear thermal expansioncoefficient of the support glass substrate within the temperature rangeof from 30° C. to 380° C. is preferably 38×10⁻⁷/° C. or more and160×10⁻⁷/° C. or less, more preferably 45×10⁻⁷/° C. or more and155×10⁻⁷/° C. or less, 50×10⁻⁷/° C. or more and 150×10⁻⁷/° C. or less,55×10⁻⁷/° C. or more and 140×10⁻⁷/° C. or less, 60×10⁻⁷/° C. or more and130×10⁻⁷/° C. or less, 65×10⁻⁷/° C. or more and 120×10⁻⁷/° C. or less,65×10⁻⁷/° C. or more and 110×10⁻⁷/° C. or less, 70×10⁻⁷/° C. or more and105×10⁻⁷/° C. or less, 75×10⁻⁷/° C. or more and 100×10⁻⁷/° C. or less,80×10⁻⁷/° C. or more and 99×10⁻⁷/° C. or less, or 85×10⁻⁷/° C. or moreand 98×10⁻⁷/° C. or less, particularly preferably 87×10⁻⁷/° C. or moreand 96×10⁻⁷/° C. or less. The “thermal expansion coefficient within thetemperature range of from 30° C. to 380° C.” refers to a value measuredfor an average thermal expansion coefficient with a dilatometer.

It is preferred that the support glass substrate of the presentinvention comprise as the glass composition, in terms of mol %, 50% to80% of SiO₂, 4% to 25% of Al₂O₃, 0% to 16% of B₂O₃, 0.9% to 15% of Li₂O,more than 0% to 21% of Na₂O, 0% to 15% of K₂O, 0% to 10% of MgO, 0% to10% of ZnO, and 0% to 15% of P₂O₅. In the following description of thecontent range of each component, the expression “%” means “mol %”.

SiO₂ is a component that forms a glass network. When the content of SiO₂is too small, vitrification does not occur easily, and the thermalexpansion coefficient becomes too high, with the result that thermalshock resistance is liable to be reduced. Accordingly, a suitable lowerlimit of the content range of SiO₂ is 50% or more, 55% or more, 57% ormore, or 59% or more, particularly 61% or more. Meanwhile, when thecontent of SiO₂ is too large, the meltability and the formability areliable to be reduced, and the thermal expansion coefficient isexcessively reduced, with the result that it becomes difficult to matchthe thermal expansion coefficient with those of peripheral materials.Accordingly, a suitable upper limit of the content range of SiO₂ is 80%or less, 70% or less, 68% or less, 66% or less, or 65% or less,particularly 64.5% or less.

Al₂O₃ is a component that increases a strain point, the Young's modulus,the fracture toughness, and a Vickers hardness, and is also a componentthat improves ion exchange performance. Accordingly, a suitable lowerlimit of the content range of Al₂O₃ is 4% or more, 8% or more, 10% ormore, 12% or more, 13% or more, 14% or more, 14.4% or more, 15% or more,15.3% or more, 15.6% or more, 16% or more, 16.5% or more, 17% or more,17.5% or more, 18% or more, or more than 18%, particularly 18.5% ormore. Meanwhile, when the content of Al₂O₃ is too large, the viscosityat high temperature is increased, with the result that the meltabilityand the formability are liable to be reduced. In addition, a devitrifiedcrystal is liable to precipitate in the glass, and it becomes difficultto form the glass into a sheet shape by an overflow down-draw method orthe like. Particularly when the glass substrate is formed by an overflowdown-draw method involving using alumina-based refractory as formingbody refractory, a devitrified crystal of spinel is liable toprecipitate at an interface with the alumina-based refractory. Further,acid resistance is reduced, with the result that it becomes difficult toapply the glass to an acid treatment step. Accordingly, a suitable upperlimit of the content range of Al₂O₃ is 25% or less, 21% or less, 20.5%or less, 20% or less, 19.9% or less, 19.5% or less, or 19.0% or less,particularly 18.9% or less. When the content of Al₂O₃, which has a largeinfluence on the ion exchange performance, is set to fall with thesuitable ranges, a profile having a first peak, a second peak, a firstbottom, and a second bottom becomes easily formable.

B₂O₃ is a component that reduces the viscosity at high temperature and adensity, and stabilizes the glass to cause less precipitation of acrystal, to thereby reduce a liquidus temperature. When the content ofB₂O₃ is too small, there is a risk in that the glass may be unstable,and devitrification resistance may be reduced. Accordingly, a suitablelower limit of the content range of B₂O₃ is 0% or more, 0.1% or more,0.2% or more, 0.5% or more, 0.6% or more, 0.7% or more, 0.8% or more, or0.9% or more, particularly 1% or more. Meanwhile, when the content ofB₂O₃ is too large, there is a risk in that the depth of layer may bereduced. In particular, the efficiency of ion exchange between a Na ionin the glass and a K ion in a molten salt is liable to be reduced, andthe depth of layer (DOL_ZERO_(K)) of a compressive stress layer isliable to be reduced. Accordingly, a suitable upper limit of the contentrange of B₂O₃ is 16% or less, 14% or less, 12% or less, 10% or less, 5%or less, 4% or less, 3.8% or less, 3.5% or less, 3.3% or less, 3.2% orless, 3.1% or less, or 3% or less, particularly 2.9% or less. When thecontent of B₂O₃ is set to fall within the suitable ranges, the profilehaving a first peak, a second peak, a first bottom, and a second bottombecomes easily formable.

The content and effects of Li₂O are as described above.

Na₂O is an ion exchange component, and is also a component that reducesthe viscosity at high temperature to improve the meltability and theformability. In addition, Na₂O is a component that improves thedevitrification resistance, and is particularly a component thatsuppresses devitrification caused by a reaction with alumina-basedrefractory. Further, Na₂O is also a component that increases the thermalexpansion coefficient. Accordingly, a suitable lower limit of thecontent range of Na₂O is more than 0%, 3% or more, 4% or more, 5% ormore, 6% or more, 7% or more, 7.5% or more, 8% or more, 8.5% or more,8.8% or more, or 9% or more, particularly more than 10%. Meanwhile, whenthe content of Na₂O is too large, the thermal expansion coefficient isexcessively increased, and the thermal shock resistance is liable to bereduced. In addition, the glass composition loses its component balance,and the devitrification resistance may be reduced contrarily.Accordingly, a suitable upper limit of the content range of Na₂O is 21%or less, 20% or less, or 19% or less, particularly 18% or less, 16.1% orless, 14% or less, 15% or less, or 13% or less, particularly 11% orless.

K₂O is a component that reduces the viscosity at high temperature toimprove the meltability and the formability. However, when the contentof K₂O is too large, the thermal expansion coefficient is excessivelyincreased, and the thermal shock resistance is liable to be reduced. Inaddition, the compressive stress value of the compressive stress layeron the outermost surface is liable to be reduced. Further, K₂O is also acomponent that increases the thermal expansion coefficient. Accordingly,a suitable upper limit of the content range of K₂O is 15% or less, 10%or less, 7% or less, 6% or less, 5% or less, 4% or less, 3% or less, 2%or less, 1.5% or less, 1% or less, less than 1%, or 0.5% or less,particularly less than 0.1%. When the viewpoint of increasing the depthof layer is emphasized, a suitable lower limit of the content range ofK₂O is 0% or more, 0.1% or more, or 0.3% or more, particularly 0.5% ormore.

The molar ratio [Li₂O]/([Na₂O]+[K₂O]) is preferably from 0.0 to 15.4,from 0.1 to 10.0, from 0.2 to 5.0, from 0.3 to 3.0, from 0.4 to 1.0, orfrom 0.5 to 0.9, particularly preferably from 0.6 to 0.8. When the molarratio [Li₂O]/([Na₂O]+[K₂O]) is too low, there is a risk in that the ionexchange performance cannot be sufficiently exhibited. In particular,the efficiency of ion exchange between a Li ion in the glass and a Naion in the molten salt is liable to be reduced. Meanwhile, when themolar ratio [Li₂O]/([Na₂O]+[K₂O]) is too high, a devitrified crystal isliable to precipitate in the glass, and it becomes difficult to form theglass into a sheet shape by an overflow down-draw method or the like.The “[Li₂O]/([Na₂O]+[K₂O])” refers to a value obtained by dividing thecontent of Li₂O by the total content of Na₂O and K₂O.

MgO is a component that reduces the viscosity at high temperature toimprove the meltability and the formability, and increases the strainpoint and the Vickers hardness. Among alkaline earth metal oxides, MgOis a component that has a high effect of improving the ion exchangeperformance. However, when the content of MgO is too large, thedevitrification resistance is liable to be reduced, and in particular,it becomes difficult to suppress devitrification caused by a reactionwith alumina-based refractory. Accordingly, a suitable content of MgO isfrom 0% to 10%, from 0.01% to 7%, from 0.05% to 5%, from 0.1% to 4%, orfrom 0.2% to 3.5%, particularly from 0.5% to less than 3%.

ZnO is a component that improves the ion exchange performance, and isparticularly a component that has a high effect of increasing thecompressive stress value of the compressive stress layer on theoutermost surface. In addition, ZnO is also a component that reduces theviscosity at high temperature without reducing a viscosity at lowtemperature. A suitable lower limit of the content range of ZnO is 0% ormore, 0.1% or more, 0.3% or more, 0.5% or more, or 0.7% or more,particularly 1% or more. Meanwhile, when the content of ZnO is toolarge, there is a tendency that the glass undergoes phase separation,the devitrification resistance is reduced, the density is increased, orthe depth of layer is reduced. Accordingly, a suitable upper limit ofthe content range of ZnO is 10% or less, 6% or less, 5% or less, 4% orless, 3% or less, 2% or less, 1.5% or less, 1.3% or less, or 1.2% orless, particularly 1.1% or less.

P₂O₅ is a component that improves the ion exchange performance, and isparticularly a component that increases the depth of layer. Further,P₂O₅ is a component that also improves the acid resistance. When thecontent of P₂O₅ is too small, there is a risk in that the ion exchangeperformance cannot be sufficiently exhibited. In particular, theefficiency of ion exchange between a Na ion in the glass and a K ion inthe molten salt is liable to be reduced, and the depth of layer(DOL_ZERO_(K)) of the compressive stress layer is liable to be reduced.In addition, there is a risk in that the glass may be unstable, and thedevitrification resistance may be reduced. Accordingly, a suitable lowerlimit of the content range of P₂O₅ is 0% or more, 0.1% or more, 0.4% ormore, 0.7% or more, 1% or more, 1.2% or more, 1.4% or more, 1.6% ormore, 2% or more, 2.3% or more, or 2.5% or more, particularly 3% ormore. Meanwhile, when the content of P₂O₅ is too large, the glass isliable to undergo phase separation, or water resistance is liable to bereduced. In addition, the depth of layer obtained through ion exchangebetween a Li ion in the glass and a Na ion in the molten salt isexcessively increased, with the result that the compressive stress value(CS_(Na)) of the compressive stress layer is liable to be reduced.Accordingly, a suitable upper limit of the content range of P₂O₅ is 15%or less, 10% or less, 5% or less, or 4.5% or less, particularly 4% orless. When the content of P₂O₅ is set to fall within the suitableranges, a non-monotonic profile becomes easily formable.

An alkali metal oxide is a component that reduces the viscosity at hightemperature to improve the meltability and the formability, and is alsoan ion exchange component. Accordingly, a suitable lower limit of thecontent range of the alkali metal oxide ([Li₂O]+[Na₂O]+[K₂O]) is 5% ormore, 6% or more, 7% or more, 8% or more, 9% or more, 10% or more, 11%or more, 12% or more, 13% or more, or 14% or more, particularly 15% ormore. However, when the content of the alkali metal oxide([Li₂O]+[Na₂O]+[K₂O]) is too large, there is a risk in that the thermalexpansion coefficient may be increased. In addition, there is a risk inthat the acid resistance may be reduced. Accordingly, a suitable upperlimit of the content range of the alkali metal oxide([Li₂O]+[Na₂O]+[K₂O]) is 28% or less, 25% or less, 23% or less, 20% orless, or 19% or less, particularly 18% or less.

The molar ratio [Li₂O]/[P₂O₅] is preferably 0 or more, from 0.1 to 30,from 0.5 to 29, from 0.9 to 28, from 3.8 to 27, from 4 to 26, or from 10to 25, particularly preferably from 15 to 20. When the molar ratio[Li₂O]/[P₂O₅] is too low, the efficiency of ion exchange between a Liion in the glass and a Na ion in the molten salt is liable to bereduced. Meanwhile, when the molar ratio [Li₂O]/[P₂O₅] is too high, adevitrified crystal is liable to precipitate in the glass, and itbecomes difficult to form the glass into a sheet shape by an overflowdown-draw method or the like. The “[Li₂O]/[P₂O₅]” refers to a valueobtained by dividing the content of Li₂O by the content of P₂O₅.

The molar ratio ([Na₂O]?[Li₂O])/([Al₂O₃]+[B₂O₃]+[P₂O₅]) is preferably1.50 or less, 0.70 or less, 0.50 or less, 0.30 or less, 0.29 or less,0.27 or less, 0.26 or less, 0.25 or less, 0.23 or less, or 0.20 or less,particularly preferably 0.15 or less. When the molar ratio([Na₂O]?[Li₂O])/([Al₂O₃]+[B₂O₃]+[P₂O₅]) is too high, there is a risk inthat the ion exchange performance cannot be sufficiently exhibited. Inparticular, the efficiency of ion exchange between a Li ion in the glassand a Na ion in the molten salt is liable to be reduced.

The molar ratio ([B₂O₃]+[Na₂O]?[P₂O₅])/([Al₂O₃]+[Li₂O]) is preferably0.001 or more, 0.05 or more, 0.15 or more, 0.25 or more, 0.30 or more,0.35 or more, 0.40 or more, 0.42 or more, or 0.43 or more, particularlypreferably 0.45 or more. When the molar ratio([B₂O₃]+[Na₂O]?[P₂O₅])/([Al₂O₃]+[Li₂O]) is too low, a devitrifiedcrystal is liable to precipitate in the glass, and it becomes difficultto form the glass into a sheet shape by an overflow down-draw method orthe like.

The ([SiO₂]+1.2×[P₂O₅]-3×[Al₂O₃]-2×[Li₂O]-1.5×[Na₂O]—[K₂O]—[B₂O₃]) ispreferably −40% or more, −30% or more, −25% or more, or −22% or more,particularly preferably −20% or more. When the([SiO₂]+1.2×[P₂O₅]-3×[Al₂O₃]-2×[Li₂O]-1.5×[Na₂O]—[K₂O]—[B₂O₃]) is toolow, the acid resistance is liable to be reduced. Meanwhile, when the([SiO₂]+1.2×[P₂O₅]-3×[Al₂O₃]-2×[Li₂O]-1.5×[Na₂O]—[K₂O]—[B₂O₃]) is toohigh, there is a risk in that the ion exchange performance cannot besufficiently exhibited.

Accordingly, the([SiO₂]+1.2×[P₂O₅]-3×[Al₂O₃]-2×[Li₂O]-1.5×[Na₂O]—[K₂O]—[B₂O₃]) ispreferably 50% or less, 40% or less, 30% or less, 20% or less, 15% orless, 10% or less, or 5% or less, particularly preferably 0% or less.

For example, the following components other than the above-mentionedcomponents may be added.

CaO is a component that reduces the viscosity at high temperature toimprove the meltability and the formability without reducing thedevitrification resistance as compared to other components, andincreases the strain point and the Vickers hardness. However, when thecontent of CaO is too large, there is a risk in that the ion exchangeperformance may be reduced, or an ion exchange solution may be degradedat the time of ion exchange treatment. Accordingly, a suitable upperlimit of the content range of CaO is 10% or less, 8% or less, 7% orless, 6% or less, 5% or less, 4% or less, 3.5% or less, 3% or less, 2%or less, 1% or less, less than 1%, or 0.5% or less, particularly from0.01% to less than 0.1%.

SrO and BaO are each a component that reduces the viscosity at hightemperature to improve the meltability and the formability, andincreases the strain point and the Young's modulus. However, when thecontents of SrO and BaO are too large, an ion exchange reaction isliable to be inhibited. Besides, the density or the thermal expansioncoefficient is increased inappropriately, or the glass is liable todevitrify. Accordingly, suitable contents of SrO and BaO are each from0% to 7%, from 0% to 5%, from 0% to 3%, from 0% to 2%, from 0% to 1.5%,from 0% to 1%, from 0% to 0.5%, or from 0% to 0.1%, particularly from0.01% to less than 0.1%.

ZrO₂ is a component that increases the Vickers hardness, and is also acomponent that increases viscosity around the liquidus viscosity and thestrain point. However, when the content of ZrO₂ is too large, there is arisk in that the devitrification resistance is remarkably reduced.Accordingly, a suitable content of ZrO₂ is from 0% to 5%, from 0% to 4%,from 0% to 3%, from 0% to 1.5%, or from 0% to 1%, particularly from0.01% to 0.1%.

TiO₂ is a component that improves the ion exchange performance, and isalso a component that reduces the viscosity at high temperature.However, when the content of TiO₂ is too large, transparency and thedevitrification resistance are liable to be reduced. Accordingly, asuitable content of TiO₂ is from 0% to 3%, from 0% to 1.5%, from 0% to1%, or from 0% to 0.1%, particularly from 0.001 mol % to 0.1 mol %.

SnO₂ is a component that improves the ion exchange performance. However,when the content of SnO₂ is too large, the devitrification resistance isliable to be reduced. Accordingly, a suitable lower limit of the contentrange of SnO₂ is 0.005% or more, or 0.01% or more, particularly 0.1% ormore, and a suitable upper limit thereof is 3% or less, or 2% or less,particularly 1% or less.

Cl is a fining agent, but is a component that adversely affects anenvironment or a facility when the content thereof is too large.Accordingly, a suitable lower limit of the content range of Cl is 0.001%or more, particularly 0.01% or more, and a suitable upper limit thereofis 0.3% or less, or 0.2% or less, particularly 0.1% or less.

As a fining agent, one kind or two or more kinds selected from the groupconsisting of SO₃ and CeO₂ (preferably the group consisting of SO₃) maybe added at from 0.001% to 1%.

Fe₂O₃ is an impurity that is inevitably mixed in from raw materials. Asuitable upper limit of the content range of Fe₂O₃ is 2,000 ppm or less(0.2% or less), 1,500 ppm or less (0.15% or less), less than 1,000 ppm(less than 0.1%), less than 800 ppm, less than 600 ppm, or less than 400ppm, particularly less than 300 ppm. When the content of Fe₂O₃ is toolarge, the transmittance of a cover glass is liable to be reduced.Meanwhile, a suitable lower limit of the content range of Fe₂O₃ is 10ppm or more, 20 ppm or more, 30 ppm or more, 50 ppm or more, 80 ppm ormore, or 100 ppm or more. When the content of Fe₂O₃ is too small, a rawmaterial cost rises owing to the use of high-purity raw materials, and aproduct cannot be manufactured inexpensively.

A rare earth oxide, such as Nd₂O₃, La₂O₃, Y₂O₃, Nb₂O₅, Ta₂O₅, or Hf₂O₃,is a component that increases the Young's modulus. However, the costs ofraw materials therefor are high. In addition, when the rare earth oxideis added in a large amount, the devitrification resistance is liable tobe reduced. Accordingly, a suitable content of the rare earth oxide is5% or less, 3% or less, 2% or less, 1% or less, or 0.5% or less,particularly 0.1% or less.

It is preferred that the support glass substrate of the presentinvention be substantially free of each of As₂O₃, Sb₂O₃, PbO, and F as aglass composition from the standpoint of environmental considerations.In addition, it is also preferred that the support glass substrate besubstantially free of Bi₂O₃ from the standpoint of environmentalconsiderations. The “substantially free of” has a concept in which theexplicit component is not positively added as a glass component, but itsaddition at an impurity level is permitted, and specifically refers tothe case in which the content of the explicit component is less than0.05%.

The support glass substrate of the present invention preferably has thefollowing characteristics.

The temperature at a viscosity at high temperature of 10^(2.5) dPa·s ofthe support glass substrate of the present invention is preferably lessthan 1,800° C., more preferably less than 1,660° C., 1,640° C. or less,less than 1,620° C., or 1,600° C. or less, particularly preferably from1,400° C. to 1,590° C. When the temperature at a viscosity at hightemperature of 10^(2.5) dPa·s is too high, the meltability and theformability are reduced, with the result that it becomes difficult toform molten glass into a sheet shape.

A density is preferably 2.80 g/cm³ or less, 2.70 g/cm³ or less, 2.60g/cm³ or less, 2.58 g/cm³ or less, 2.56 g/cm³ or less, 2.55 g/cm³ orless, 2.53 g/cm³ or less, 2.50 g/cm³ or less, 2.49 g/cm³ or less, or2.45 g/cm³ or less, particularly preferably from 2.35 g/cm³ to 2.44g/cm³. As the density becomes lower, the weight of a tempered glasssubstrate can be reduced more.

A softening point is preferably 985° C. or less, 970° C. or less, 950°C. or less, 930° C. or less, 900° C. or less, 880° C. or less, or 860°C. or less, particularly preferably from 850° C. to 700° C. The“softening point” refers to a value measured based on a method of ASTMC338.

A liquidus viscosity is preferably 10^(3.0) or more, 10^(3.2) or more,10^(3.4) or more, 10^(3.6) or more, 10^(3.24) dPa·s or more, 10^(4.5)dPa·s or more, 10^(4.8) dPa·s or more, 10^(4.9) dPa·s or more, 10^(5.0)dPa·s or more, 10^(5.1) dPa·s or more, 10^(5.2) dPa·s or more, 10^(5.3)dPa·s or more, or 10^(5.4) dPa·s or more, particularly preferably10^(5.5) dPa·s or more. As the liquidus viscosity becomes higher,devitrification resistance is improved more, and devitrified stones areless liable to be generated at the time of forming. The “liquidusviscosity” as used herein refers to a value measured for a viscosity ata liquidus temperature by a platinum sphere pull up method. The“liquidus temperature” refers to a temperature obtained as describedbelow. Glass powder which has passed through a standard 30-mesh sieve(500 μm) and remained on a 50-mesh sieve (300 μm) is loaded into aplatinum boat, and the platinum boat is kept for 24 hours in atemperature gradient furnace and is then taken out of the furnace. Atthis time, a highest temperature at which devitrification (devitrifiedstones) is observed with a microscope in glass is measured.

A Young's modulus is preferably 63 GPa or more, 65 GPa or more, 68 GPaor more, 70 GPa or more, 74 GPa or more, from 75 GPa to 100 GPa, or from80 GPa to 95 GPa, particularly preferably from 85 GPa to 90 GPa. Whenthe Young's modulus is low, the support glass substrate is liable to bebroken. In addition, the support glass substrate is liable to bedeflected in the case of having a small sheet thickness.

A fracture toughness K_(1C) is preferably 0.80 MPa·m^(0.5) or more, 0.81MPa·m^(0.5) or more, 0.82 MPa·m^(0.5) or more, 0.83 MPa·m^(0.5) or more,or 0.84 MPa·m^(0.5) or more, particularly preferably 0.85 MPa·m^(0.5) ormore. When the fracture toughness K_(1C) is low, the support glasssubstrate is liable to be broken.

The mass loss of the support glass substrate of the present inventionper unit surface area when the support glass substrate is immersed in a5 mass % HCl aqueous solution warmed to 80° C. for 24 hours ispreferably 100.0 mg/cm² or less, 90 mg/cm² or less, 80 mg/cm² or less,70 mg/cm² or less, 60 mg/cm² or less, 50 mg/cm² or less, 40 mg/cm² orless, or 30 mg/cm² or less, particularly preferably 20 mg/cm² or less.The support glass substrate may be brought into contact with an acidchemical in a manufacturing process for a semiconductor package, andpreferably has high acid resistance from the viewpoint of preventing aprocess failure.

The mass loss per unit surface area when the support glass substrate isimmersed in a 5 mass % NaOH aqueous solution warmed to 80° C. for 6hours is preferably 5.0 mg/cm² or less, 4.9 mg/cm² or less, 4.8 mg/cm²or less, 4.7 mg/cm² or less, 4.6 mg/cm² or less, 4.5 mg/cm² or less, 4.0mg/cm² or less, or 3.0 mg/cm² or less, particularly preferably 2.0mg/cm² or less. The support glass substrate is often washed and recycledin a manufacturing process for a semiconductor package. In this case,the support glass substrate may be brought into contact with an alkalinechemical or detergent, and is required to have high alkali resistance.

The support glass substrate of the present invention preferably has thefollowing shape.

The support glass substrate of the present invention preferably has awafer shape or a substantially disc shape, and the diameter thereof ispreferably 100 mm or more and 500 mm or less, particularly preferably150 mm or more and 450 mm or less. With this configuration, the supportglass substrate is easily applied to a manufacturing process for afan-out type WLP. As required, the support glass substrate may beprocessed into any other shape, for example, a rectangular shape.

The support glass substrate of the present invention also preferably hasa substantially rectangular shape, and the dimensions thereof arepreferably −200 mm or more or from □220 mm to −750 mm, particularlypreferably from □250 mm to −500 mm. With this configuration, the supportglass substrate is easily applied to a manufacturing process for afan-out type panel level package (PLP). As required, the support glasssubstrate may be processed into any other shape, for example, atriangular shape or a trapezoidal shape.

A sheet thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mmor less, 1.1 mm or less, or 1.0 mm or less, particularly preferably 0.9mm or less. As the sheet thickness becomes smaller, the mass of alaminated substrate is reduced, and hence a handling property isimproved. Meanwhile, when the sheet thickness is excessively small, thestrength of the support glass substrate itself decreases, and hence thesupport glass substrate does not easily function as a supportingsubstrate. Accordingly, the sheet thickness is preferably 0.1 mm ormore, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, or0.6 mm or more, particularly preferably more than 0.7 mm.

A total thickness variation (TTV) is preferably 5 μm or less, 4 μm orless, 3 μm or less, 2 μm or less, or 1 μm or less, particularlypreferably from 0.1 μm to less than 1 μm. In addition, an arithmeticaverage roughness Ra is preferably 20 nm or less, 10 nm or less, 5 nm orless, 2 nm or less, or 1 nm or less, particularly preferably 0.5 nm orless. As surface accuracy becomes higher, the accuracy of processingtreatment is increased more easily. In particular, wiring accuracy canbe increased, and hence high-density wiring can be performed. Inaddition, the strength of the support glass substrate is increased, withthe result that the support glass substrate and a laminated substrateare less liable to be broken. Further, the number of times of reuse ofthe support glass substrate can be increased. The “arithmetic averageroughness Ra” may be measured with a stylus-type surface roughness meteror an atomic force microscope (AFM).

A warpage level is preferably 60 μm or less, 55 μm or less, 50 μm orless, or from 1 μm to 45 μm, particularly preferably from 5 μm to 40 μm.As the warpage level becomes smaller, the accuracy of processingtreatment is increased more easily. In particular, wiring accuracy canbe increased, and hence high-density wiring can be performed.

When the support glass substrate has a wafer shape or a substantiallydisc shape, the circularity thereof is preferably 1 mm or less, 0.1 mmor less, or 0.05 mm or less, particularly preferably 0.03 mm or less. Asthe circularity becomes smaller, the support glass substrate is appliedto a manufacturing process for a fan-out type WLP more easily. The“circularity” refers to a value obtained by subtracting a minimumcontour value from a maximum contour value except for a notch structure.

The support glass substrate of the present invention preferablycomprises a positioning portion. The positioning portion preferably hasany one of a notch structure, a chamfer structure, and a cutoutstructure, and particularly preferably has a notch structure. The notchstructure more preferably has, in a deep portion thereof, asubstantially circular shape or a substantially V-groove shape in planview. This facilitates the position fixation of the support glasssubstrate by bringing a positioning member such as a positioning pininto abutment with the notch structure of the support glass substrate.As a result, this facilitates position alignment between the supportglass substrate and the substrate to be processed. Particularly when anotch structure is also formed in the substrate to be processed, and thepositioning member is brought into abutment with the notch structure,the position alignment is facilitated in the entire laminated substrate.Cracks are liable to occur in the notch structure owing to abutment withthe positioning member, but the support glass substrate of the presentinvention, which has high strength, is particularly effective in thecase of having a notch structure.

When the positioning member is brought into abutment with the notchstructure of the support glass substrate, a stress is liable to beconcentrated in the notch structure, and the support glass substrate isliable to be broken from the notch structure. In particular, thetendency becomes remarkable when the support glass substrate is curvedby external force. Accordingly, in the support glass substrate of thepresent invention, an end edge region in which a surface and an endsurface of the notch structure intersect with each other is preferablyentirely or partially chamfered. With this configuration, the breakagefrom the notch structure can be effectively avoided.

In the support glass substrate of the present invention having a wafershape or a substantially disc shape, the end edge region in which asurface and an end surface of the notch structure intersect with eachother is entirely or partially chamfered. It is preferred that 50% ormore of the end edge region in which a surface and an end surface of thenotch structure intersect with each other be chamfered. It is morepreferred that 90% or more of the end edge region in which a surface andan end surface of the notch structure intersect with each other bechamfered. It is still more preferred that the entirety of the end edgeregion in which a surface and an end surface of the notch structureintersect with each other be chamfered. As a larger region of the notchstructure is chamfered, the breakage probability of the support glasssubstrate from the notch structure can be reduced.

The chamfer width of the notch structure in a surface direction ispreferably from 50 μm to 900 μm, from 200 μm to 800 μm, from 300 μm to700 μm, or from 400 μm to 650 μm, particularly preferably from 500 μm to600 μm. When the chamfer width of the notch structure in the surfacedirection is too small, the support glass substrate is liable to bebroken from the notch structure. Meanwhile, when the chamfer width ofthe notch structure in the surface direction is too large, chamferingefficiency is reduced, and the manufacturing cost of the support glasssubstrate is liable to rise.

The chamfer width of the notch structure in a sheet thickness directionis preferably from 5% to 80%, from 20% to 75%, from 30% to 70%, or from35% to 65%, particularly preferably from 40% to 60% of the sheetthickness. When the chamfer width of the notch structure in the sheetthickness direction is too small, the support glass substrate is liableto be broken from the notch structure. Meanwhile, when the chamfer widthof the notch structure in the sheet thickness direction is too large,external force is liable to be concentrated in the end surface of thenotch structure, with the result that the support glass substrate isliable to be broken from the end surface of the notch structure.

When the support glass substrate has a substantially rectangular shape,the support glass substrate has a corner angle of preferably from 89.0°to 91.0°, from 89.1° to 90.9°, from 89.2° to 90.8°, from 89.3° to 90.7°,or from 89.4° to 90.6°, particularly preferably from 89.5° to 90.5° whenseen from above, that is, in plan view. As the corner angle is closer to90°, the positioning of the support glass substrate can be performedmore accurately at the time of conveyance.

The support glass substrate of the present invention preferablycomprises, on the surface thereof, an information identification partcomprising dots as a constituent unit. The information identificationpart comprises one or more kinds of elements selected from a letter, asymbol, a two-dimensional code, and a figure, and the element is formedof a plurality of dots. The information identification part preferablycomprises at least one piece of information selected from thedimensions, linear thermal expansion coefficient, lot, total thicknessvariation (TTV), manufacturer, distributor, and material code of thesupport glass substrate. The “dimensions” include the thicknessdimension and outer diameter dimension of the support glass substrate,the dimensions of the notch structure, and the like.

The outer diameter dimension of the dot is preferably from 0.05 mm to0.20 mm or from 0.07 mm to 0.13 mm or less, particularly preferably from0.09 mm to 0.11 mm. When the outer diameter dimension of the dot is toosmall, the viewability of the information identification part is liableto be reduced. Meanwhile, when the outer diameter dimension of the dotis too large, the strength of the support glass substrate is easilyensured.

The dots adjacent to each other have a distance between centers ofpreferably from 0.06 mm to 0.25 mm. When the dots adjacent to each otherhave an excessively small distance between centers, the strength of thesupport glass substrate is easily ensured. Meanwhile, when the dotsadjacent to each other have an excessively large distance betweencenters, the viewability of the information identification part isliable to be reduced.

It is preferred that the information identification part comprise dotsas a constituent unit, and the dots each have an annular groove shape.When the dots each have an annular groove shape, a region enclosed bythe annular groove (an inside region with respect to the groove) remainswithout being removed by a laser, and hence a reduction in strength of aregion in which the information identification part is formed can beprevented to the extent possible. In addition, in the case of theannular groove, the viewability is not significantly reduced even whenthe width dimension of the groove is reduced as long as the outerdiameter dimension thereof is not changed. Thus, when the widthdimension of the groove is reduced without changing the outer diameterdimension thereof, the inside region with respect to the groove can beenlarged accordingly, with the result that, while the viewability isensured, required strength can be maintained.

The depth dimension of the groove forming the dot is preferably from 2μm to 30 μm. When the depth dimension of the groove is too small, theviewability of the information identification part is liable to bereduced. Meanwhile, when the depth dimension of the groove is too large,the strength of the support glass substrate is easily ensured.

The information identification part may be formed by various methods,but the information identification part is preferably formed byradiating a pulse laser to abrade glass in the irradiated region, thatis, the information identification part is preferably formed by laserabrasion. With this configuration, abrasion can be performed withoutaccumulating excessive heat in the glass in the irradiated region. As aresult, not only the length of a crack in a thickness direction but alsothe length of a crack extending from the dot in a surface direction canbe reduced.

The support glass substrate of the present invention is preferablymanufactured by blending and mixing glass raw materials to produce aglass batch, and loading the glass batch into a glass melting furnace,followed by fining and stirring the resultant molten glass, andsupplying the molten glass to a forming device to form the glass into asheet shape.

The support glass substrate of the present invention preferably hasoverflow-merged surfaces in a middle portion thereof in a sheetthickness direction. In the overflow down-draw method, surfaces that areto serve as the surfaces of the support glass substrate are formed in astate of free surfaces without being brought into contact withtrough-shaped refractory. Accordingly, with slight polishing, the totalthickness variation can be reduced to less than 2.0 μm, particularly toless than 1.0 μm. As a result, the manufacturing cost of the supportglass substrate can be reduced.

It is preferred that the surface of the support glass substrate of thepresent invention be polished after its formation by the overflowdown-draw method. With this configuration, the total thickness variationcan be easily controlled to less than 2.0 μm, 1.5 μm or less, or 1.0 μmor less, particularly from 0.1 μm to less than 1.0 μm.

The support glass substrate of the present invention preferably has acompressive stress layer in a glass surface thereof, and more preferablyhas a compressive stress layer through ion exchange. When thecompressive stress layer is formed in the glass surface, the breakageprobability of the support glass substrate can be reduced at the time ofdropping of a laminated substrate onto the ground.

In the support glass substrate of the present invention, the compressivestress layer has a compressive stress value on the outermost surface ofpreferably from 165 MPa to 1,000 MPa, 200 MPa or more, 220 MPa or more,250 MPa or more, 280 MPa or more, 300 MPa or more, or 310 MPa or more,particularly preferably 320 MPa or more. When the compressive stressvalue of the compressive stress layer on the outermost surface becomeshigher, the Vickers hardness is increased more. Meanwhile, when anexcessively large compressive stress is formed in the surface, aninternal tensile stress of the support glass substrate is increasedexcessively, and there is a risk in that a dimensional change before andafter ion exchange treatment may be increased. Accordingly, thecompressive stress value of the compressive stress layer on theoutermost surface is preferably 1,000 MPa or less, 900 MPa or less, 700MPa or less, 680 MPa or less, or 650 MPa or less, particularlypreferably 600 MPa or less. There is a tendency that the compressivestress value of the compressive stress layer on the outermost surface isincreased when an ion exchange time period is shortened, or thetemperature of an ion exchange solution is reduced.

The compressive stress layer has a depth of layer of preferably from 50μm to 200 μm, 50 μm or more, 60 μm or more, 80 μm or more, or 100 μm ormore, particularly preferably 120 μm or more. As the depth of layerbecomes larger, protrusions on the ground are less liable to reach thetensile stress layer of the support glass substrate at the time ofdropping of the laminated substrate, and thus the breakage probabilityof the support glass substrate can be reduced more. Meanwhile, when thedepth of layer is too large, there is a risk in that a dimensionalchange before and after the ion exchange treatment may be increased.Further, there is a tendency that the compressive stress value of thecompressive stress layer on the outermost surface is reduced.Accordingly, the depth of layer is preferably 200 μm or less, 180 μm orless, or 150 μm or less, particularly preferably 140 μm or less. Thereis a tendency that the depth of layer is increased when the ion exchangetime period is prolonged, or the temperature of the ion exchangesolution is increased.

The ion exchange treatment is preferably performed a plurality of times.As the ion exchange treatment performed a plurality of times, it ispreferred to perform ion exchange treatment in which the support glasssubstrate is immersed in a molten salt containing a KNO₃ molten salt,and then perform ion exchange treatment in which the support glasssubstrate is immersed in a molten salt containing a NaNO₃ molten salt.With this configuration, while a large depth of layer is ensured, thecompressive stress value of the compressive stress layer on theoutermost surface can be increased.

In particular, it is preferred to perform ion exchange treatment (firstion exchange step) in which the support glass substrate is immersed in aNaNO₃ molten salt or a mixed molten salt of NaNO₃ and KNO₃, and thenperform ion exchange treatment (second ion exchange step) in which thesupport glass substrate is immersed in a mixed molten salt of KNO₃ andLiNO₃. With this configuration, a non-monotonic stress profileillustrated in each of FIG. 4 and FIG. 5 , that is, a stress profilehaving at least a first peak, a second peak, a first bottom, and asecond bottom can be formed. As a result, the breakage probability ofthe support glass substrate can be significantly reduced at the time ofdropping of the laminated substrate.

In the first ion exchange step, a Li ion in the glass and a Na ion inthe molten salt are ion-exchanged with each other, and in the case ofusing the mixed molten salt of NaNO₃ and KNO₃, a Na ion in the glass anda K ion in the molten salt are further ion-exchanged with each other.Herein, the ion exchange between a Li ion in the glass and a Na ion inthe molten salt is faster and more efficient than the ion exchangebetween a Na ion in the glass and a K ion in the molten salt. In thesecond ion exchange step, a Na ion in the vicinity of the glass surface(a shallow region from the outermost surface to a sheet thickness of20%) and a Li ion in the molten salt are ion-exchanged with each other,and besides, a Na ion in the vicinity of the glass surface (the shallowregion from the outermost surface to a sheet thickness of 20%) and a Kion in the molten salt are ion-exchanged with each other. That is, inthe second ion exchange step, while a Na ion in the vicinity of theglass surface is released, a K ion, which has a large ionic radius, canbe introduced. As a result, while a large depth of layer is maintained,the compressive stress value of the compressive stress layer on theoutermost surface can be increased.

In the first ion exchange step, the temperature of the molten salt ispreferably from 360° C. to 400° C., and the ion exchange time period ispreferably from 30 minutes to 6 hours. In the second ion exchange step,the temperature of the ion exchange solution is preferably from 370° C.to 400° C., and the ion exchange time period is preferably from 15minutes to 3 hours.

In order to form the non-monotonic stress profile, it is preferred thatthe concentration of NaNO₃ be higher than the concentration of KNO₃ inthe mixed molten salt of NaNO₃ and KNO₃ to be used in the first ionexchange step, and that the concentration of KNO₃ be higher than theconcentration of LiNO₃ in the mixed molten salt of KNO₃ and LiNO₃ to beused in the second ion exchange step.

In the mixed molten salt of NaNO₃ and KNO₃ to be used in the first ionexchange step, the concentration of KNO₃ is preferably 0 mass % or more,0.5 mass % or more, 1 mass % or more, 5 mass % or more, 7 mass % ormore, 10 mass % or more, or 15 mass % or more, particularly preferablyfrom 20 mass % to 90 mass %. When the concentration of KNO₃ is too high,there is a risk in that the compressive stress value obtained throughion exchange between a Li ion in the glass and a Na ion in the moltensalt may be excessively reduced. In addition, when the concentration ofKNO₃ is too low, there is a risk in that the measurement of a stresswith a surface stress meter FSM-6000 may become difficult.

In the mixed molten salt of KNO₃ and LiNO₃ to be used in the second ionexchange step, the concentration of LiNO₃ is preferably from more than 0mass % to 5 mass %, from more than 0 mass % to 3 mass %, or from morethan 0 mass % to 2 mass %, particularly preferably from 0.1 mass % to 1mass %. When the concentration of LiNO₃ is too low, it becomes difficultto release a Na ion in the vicinity of the glass surface. Meanwhile,when the concentration of LiNO₃ is too high, there is a risk in that thecompressive stress value obtained through ion exchange between a Na ionin the vicinity of the glass surface and a K ion in the molten salt maybe excessively reduced.

A laminated substrate of the present invention comprises at least asubstrate to be processed and a support glass substrate for supportingthe substrate to be processed, wherein the support glass substrate isthe above-mentioned support glass substrate. The laminated substrate ofthe present invention preferably comprises an adhesive layer between thesubstrate to be processed and the support glass substrate. The adhesivelayer is preferably formed of a resin, and for example, a thermosettingresin, a photocurable resin (in particular, a UV-curable resin), and thelike are preferred. In addition, the adhesive layer preferably has heatresistance that withstands the heat treatment in the manufacturingprocess for a fan-out type WLP. With this configuration, the adhesivelayer is less liable to be melted in the manufacturing process for afan-out type WLP, and the accuracy of the processing treatment can beenhanced. A UV-curable tape may also be used as the adhesive layer inorder to fix the substrate to be processed and the support glasssubstrate easily.

The laminated substrate of the present invention preferably furthercomprises a peeling layer between the substrate to be processed and thesupport glass substrate, more specifically between the substrate to beprocessed and the adhesive layer, or preferably further comprises apeeling layer between the support glass substrate and the adhesivelayer. With this configuration, after the substrate to be processed issubjected to predetermined processing treatment, the substrate to beprocessed is easily peeled from the support glass substrate. From theviewpoint of productivity, it is preferred that the substrate to beprocessed be peeled from the support glass substrate through use ofirradiation light such as laser light. An infrared laser light source,such as a YAG laser (wavelength of 1,064 nm) or a semiconductor laser(wavelength of from 780 nm to 1,300 nm), may be used as a laser lightsource. In addition, a resin degradable by infrared laser irradiationmay be used for the peeling layer. In addition, a substance that absorbsinfrared light efficiently and converts the light into heat may also beadded to the resin. For example, carbon black, graphite powder, metalpowder fine particles, a dye, a pigment, and the like may also be addedto the resin.

The peeling layer is formed of a material in which “in-layer peeling” or“interfacial peeling” occurs through use of irradiation light such aslaser light. That is, the peeling layer is formed of a material in whichthe interatomic or intermolecular binding force between atoms ormolecules is lost or reduced to cause ablation or the like, to therebycause peeling, through irradiation with light having predeterminedintensity. There are the case in which components contained in thepeeling layer turn into a gas to be released, to thereby causeseparation, through irradiation with irradiation light, and the case inwhich the peeling layer absorbs light to turn into a gas and the vaporthereof is released, to thereby cause separation.

In the laminated substrate of the present invention, it is preferredthat the support glass substrate be larger than the substrate to beprocessed. With this configuration, even when the center positions ofthe substrate to be processed and the support glass substrate areslightly separated from each other at a time when the substrate to beprocessed is supported, an edge portion of the substrate to be processedis less liable to protrude from the support glass substrate.

A method of manufacturing a semiconductor package of the presentinvention comprises the steps of: preparing a laminated substratecomprising at least a substrate to be processed and a support glasssubstrate for supporting the substrate to be processed; and subjectingthe substrate to be processed to processing treatment, wherein thesupport glass substrate is the above-mentioned support glass substrate.

It is preferred that the method of manufacturing a semiconductor packageof the present invention further comprise a step of conveying thelaminated substrate. With this configuration, the treatment efficiencyof the processing treatment can be enhanced. The “step of conveying thelaminated substrate” and the “step of subjecting the substrate to beprocessed to processing treatment” are not required to be performedseparately, and may be performed simultaneously.

In the method of manufacturing a semiconductor package of the presentinvention, it is preferred that the processing treatment be treatmentinvolving arranging wiring on one surface of the substrate to beprocessed or treatment involving forming solder bumps on one surface ofthe substrate to be processed. In the method of manufacturing asemiconductor package of the present invention, during the treatment, adimensional change is less liable to occur in the substrate to beprocessed, and hence those steps can be performed properly.

Besides the foregoing, the processing treatment may be any of treatmentinvolving mechanically polishing one surface (in general, the surface onan opposite side to the support glass substrate) of the substrate to beprocessed, treatment involving subjecting one surface (in general, thesurface on an opposite side to the support glass substrate) of thesubstrate to be processed to dry etching, and treatment involvingsubjecting one surface (in general, the surface on an opposite side tothe support glass substrate) of the substrate to be processed to wetetching. In the method of manufacturing a semiconductor package of thepresent invention, warpage is less liable to occur in the substrate tobe processed, and the stiffness of the laminated substrate can bemaintained. As a result, the processing treatment can be performedproperly.

The present invention is further described with reference to thedrawings.

FIG. 1 is a conceptual perspective view for illustrating an example of alaminated substrate 1 of the present invention. In FIG. 1 , thelaminated substrate 1 comprises a support glass substrate 10 and asubstrate 11 to be processed. The support glass substrate 10 is bondedonto the substrate 11 to be processed so as to prevent a dimensionalchange of the substrate 11 to be processed. In addition, the supportglass substrate 10 comprises lithium aluminosilicate-based glass, has acontent of Li₂O of from 0.02 mol % to 25 mol % in a glass composition,and has an average linear thermal expansion coefficient within atemperature range of from 30° C. to 380° C. of 45×10⁻⁷/° C. or more and160×10⁻⁷/° C. or less. In addition, a peeling layer 12 and an adhesivelayer 13 are arranged between the support glass substrate 10 and thesubstrate 11 to be processed. The peeling layer 12 is held in contactwith the support glass substrate 10, and the adhesive layer 13 is heldin contact with the substrate 11 to be processed.

As is understood from FIG. 1 , the laminated substrate 1 comprises thesupport glass substrate 10, the peeling layer 12, the adhesive layer 13,and the substrate 11 to be processed, which are laminated and arrangedin the stated order. The shape of the support glass substrate 10 isdetermined depending on the substrate 11 to be processed, and in FIG. 1, both the support glass substrate 10 and the substrate 11 to beprocessed have a wafer shape. In addition to amorphous silicon (a-Si),for example, silicon oxide, a silicate compound, silicon nitride,aluminum nitride, or titanium nitride may be used for the peeling layer12. The peeling layer 12 is formed by plasma CVD, spin coating using asol-gel method, or the like. The adhesive layer 13 is made of a resinand is formed through application, for example, by any of variousprinting methods, an ink jet method, a spin coating method, a rollcoating method, or the like. The adhesive layer 13 is removed by beingdissolved in a solvent or the like after the support glass substrate 10is peeled from the substrate 11 to be processed through use of thepeeling layer 12.

FIG. 2 are conceptual sectional views for illustrating a manufacturingprocess for a fan-out type WLP. FIG. 2(a) is an illustration of a statein which an adhesive layer 21 is formed on one surface of a supportingmember 20. As required, a peeling layer may be formed between thesupporting member 20 and the adhesive layer 21. Next, as illustrated inFIG. 2(b), a plurality of semiconductor chips 22 are bonded onto theadhesive layer 21. In this case, an active surface of each semiconductorchip 22 is brought into contact with the adhesive layer 21. Then, asillustrated in FIG. 2(c), the semiconductor chips 22 are molded with asealing material 23 of a resin. As the sealing material 23, a materialhaving less dimensional change after compression molding and having lessdimensional change during formation of wiring is used. Subsequently, asillustrated in FIG. 2(d) and FIG. 2(e), a substrate 24 to be processedhaving the semiconductor chips 22 molded therein is separated from thesupporting member 20 and is then adhesively fixed onto a support glasssubstrate 26 via an adhesive layer 25. In this case, in the surface ofthe substrate 24 to be processed, the surface on an opposite side to thesurface in which the semiconductor chips 22 are buried is arranged onthe support glass substrate 26 side. Thus, a laminated substrate 27 canbe obtained. As required, a peeling layer may be formed between theadhesive layer 25 and the support glass substrate 26. Further, after theobtained laminated substrate 27 is conveyed, as illustrated in FIG.2(f), a wiring 28 is formed on the surface of the substrate 24 to beprocessed in which the semiconductor chips 22 are buried, and then aplurality of solder bumps 29 are formed. Finally, after the substrate 24to be processed is separated from the support glass substrate 26, thesubstrate 24 to be processed is cut for each semiconductor chip 22 to beused in a later packaging step (FIG. 2(g)).

FIG. 3 are conceptual sectional views for illustrating a step ofthinning the substrate to be processed through use of the support glasssubstrate as a backgrind substrate. FIG. 3(a) is an illustration of alaminated substrate 30. The laminated substrate 30 comprises a supportglass substrate 31, a peeling layer 32, an adhesive layer 33, and asubstrate 34 to be processed (silicon wafer), which are laminated andarranged in the stated order. A plurality of semiconductor chips 35 areformed by a photolithography method or the like on the surface of thesubstrate to be processed brought into contact with the adhesive layer33. FIG. 3(b) is an illustration of a step of thinning the substrate 34to be processed with a polishing device 36. Through this step, thesubstrate 34 to be processed is mechanically polished to be thinned to,for example, several tens of micrometers. FIG. 3(c) is an illustrationof a step of irradiating the peeling layer 32 with UV light 37 throughthe support glass substrate 31. After the performance of this step, thesupport glass substrate 31 can be separated as illustrated in FIG. 3(d).The support glass substrate 31 having been separated is reused asrequired. FIG. 3(e) is an illustration of a step of removing theadhesive layer 33 from the substrate 34 to be processed. After theperformance of this step, the substrate 34 to be processed having beenthinned can be collected.

A glass substrate of the present invention comprises as a glasscomposition, in terms of mol %, 50% to 65% of SiO₂, 8% to 25% of Al₂O₃,0% to 10% of B₂O₃, 5.1% to 20% of Li₂O, more than 10% to 16.1% of Na₂O,0% to 15% of K₂O, 0.01% to 3% of MgO, 0% to 10% of CaO, and 0.01% to 10%of ZrO₂, and has a Young's modulus of 80 GPa or more. In addition, aglass substrate of the present invention comprises as a glasscomposition, in terms of mol %, 50% to 65% of SiO₂, 8% to 18% of Al₂O₃,0% to 10% of B₂O₃, 20% to 25% of Li₂O, 0.01% to 10% of Na₂O, 0% to 15%of K₂O, 0% to 10% of MgO, 0.01% to 10% of CaO, and 0% to 10% of ZrO₂,has a Young's modulus of 85 GPa or more, and has a fracture toughnessK_(1C) of 0.80 MPa·m^(0.5) or more. The technical features of the glasssubstrate of the present invention have already been described in thedescription section of the support glass substrate of the presentinvention, and hence detailed description thereof is omitted here.

A glass substrate of the present invention comprises as a glasscomposition, in terms of mol %, 64% to 76% of SiO₂, 4% to 15% of Al₂O₃,4% to 16% of B₂O₃, 0.1% to 14% of Li₂O, 0.01% to 14% of Na₂O, 0% to 15%of K₂O, 0% to 7% of MgO, 0% to 7% of CaO, 0% to 7% of SrO, 0% to 7% ofBaO, and 0% to 10% of ZrO₂, has a Young's modulus of 60 GPa or more, andhas an average linear thermal expansion coefficient within a temperaturerange of from 30° C. to 380° C. of 38×10⁻⁷/° C. or more and 85×10⁻⁷/° C.or less. In addition, a glass substrate of the present inventioncomprises as a glass composition, in terms of mol %, 64% to 76% of SiO₂,4% to 15% of Al₂O₃, 4% to 16% of B₂O₃, 0.1% to 14% of Li₂O, 0.01% to 14%of Na₂O, 0% to 15% of K₂O, 0.01% to 7% of MgO, 0.01% to 7% of CaO, 0% to7% of SrO, 0% to 7% of BaO, and 0% to 10% of ZrO₂, having a Young'smodulus of 60 GPa or more, and having an average linear thermalexpansion coefficient within a temperature range of from 30° C. to 380°C. of 38×10⁻⁷/° C. or more and 85×10⁻⁷/° C. or less. In addition, aglass substrate of the present invention comprises as a glasscomposition, in terms of mol %, 64% to 76% of SiO₂, 4% to 15% of Al₂O₃,4% to 16% of B₂O₃, 0.1% to 14% of Li₂O, 0.01% to 14% of Na₂O, 0% to 15%of K₂O, 0% to 7% of MgO, 0% to 7% of CaO, 0.01% to 7% of SrO, 0% to 7%of BaO, and 0% to 10% of ZrO₂, has a Young's modulus of 60 GPa or more,and has an average linear thermal expansion coefficient within atemperature range of from 30° C. to 380° C. of 38×10⁻⁷/° C. or more and85×10⁻⁷/° C. or less. In addition, a glass substrate of the presentinvention comprises as a glass composition, in terms of mol %, 64% to76% of SiO₂, 4% to 15% of Al₂O₃, 4% to 16% of B₂O₃, 0.1% to 14% of Li₂O,0.01% to 14% of Na₂O, 0% to 15% of K₂O, 0.01% to 7% of MgO, 0.01% to 7%of CaO, 0.01% to 7% of SrO, 0% to 7% of BaO, and 0% to 10% of ZrO₂, hasa Young's modulus of 60 GPa or more, and has an average linear thermalexpansion coefficient within a temperature range of from 30° C. to 380°C. of 38×10⁻⁷/° C. or more and 85×10⁻⁷/° C. or less. In addition, aglass substrate of the present invention comprises as a glasscomposition, in terms of mol %, 64% to 76% of SiO₂, 4% to 15% of Al₂O₃,4% to 16% of B₂O₃, 1.5% to 8.5% of Li₂O, 0.01% to 14% of Na₂O, 0% to 15%of K₂O, 0.01% to 7% of MgO, 0.01% to 7% of CaO, 0.01% to 7% of SrO, 0%to 7% of BaO, and 0% to 10% of ZrO₂, has a Young's modulus of 60 GPa ormore, and has an average linear thermal expansion coefficient within atemperature range of from 30° C. to 380° C. of 38×10⁻⁷/° C. or more and85×10⁻⁷/° C. or less. The technical features of the glass substrate ofthe present invention have already been described in the descriptionsection of the support glass substrate of the present invention, andhence detailed description thereof is omitted here.

Example 1

Now, the present invention is described by way of Examples. However,Examples below are merely examples, and the present invention is by nomeans limited to the following Examples.

The glass compositions and glass characteristics of Examples (SampleNos. 1 to 361) of the present invention are shown in Tables 1 to 36. Inthe tables, the “N.A.” means “unmeasured”, the “Li/(Na+K)” means themolar ratio [Li₂O]/([Na₂O]+[K₂O]), the “Li+Na+K” means the molar ratio[Li₂O]+[Na₂O]+[K₂O], the “Li/P” means the molar ratio [Li₂O]/[P₂O₅], the“(Na—Li)/(Al+B+P)” means the molar ratio([Na₂O]?[Li₂O])/([Al₂O₃]+[B₂O₃]+[P₂O₅]), the “(B+Na—P)/(Al+Li)” meansthe molar ratio ([B₂O₃]+[Na₂O]?[P₂O₅])/([Al₂O₃]+[Li₂O]), and the“Si+1.2P-3Al-2Li-1.5Na—K—B” means the[SiO₂]+1.2×[P₂O₅]-3×[Al₂O₃]-2×[Li₂O]-1.5×[Na₂O]—[K₂O]—[B₂O₃]. Inaddition, a value in parentheses is a calculation value estimated fromthe glass composition.

TABLE 1 (mol %) No. 1 No. 2 No. 3 No. 4 No. 5 No. 6 No. 7 No. 8 No. 9No. 10 SiO₂ 59.07 59.07 60.07 61.07 61.07 61.07 61.07 61.07 61.07  61.07Al₂O₃ 17.81 15.81 17.81 18.81 17.81 16.81 16.81 15.81 15.81  17.81 B₂O₃0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Li₂O 8.34 8.34 8.347.34 7.34 8.34 7.34 7.34 8.34 8.34 Na₂O 11.10 13.10 10.10 9.10 10.1010.10 11.10 12.10 11.10  9.10 K₂O 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 MgO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 CaO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO 1.161.16 1.16 1.16 1.16 1.16 1.16 1.16 1.16 1.16 P₂O₅ 2.47 2.47 2.47 2.472.47 2.47 2.47 2.47 2.47 2.47 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 Fe₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 Li/(Na + K) 0.75 0.64 0.83 0.81 0.730.83 0.66 0.61 0.75 0.92 (Na + K)/Li 1.33 1.57 1.21 1.24 1.38 1.21 1.511.65 1.33 1.09 Li + Na + K 19.44 21.44 18.44 16.44 17.44 18.44 18.4419.44 19.44  17.44 Li/P 3.38 3.38 3.38 2.97 2.97 3.38 2.97 2.97 3.383.38 P/Li 0.30 0.30 0.30 0.34 0.34 0.30 0.34 0.34 0.30 0.30 (Na − Li)/0.14 0.26 0.09 0.08 0.14 0.09 0.19 0.26 0.15 0.04 (Al + B + P) (B + Na −P)/ 0.33 0.44 0.29 0.25 0.30 0.30 0.36 0.42 0.36 0.25 (Al + Li) Si +1.2P − 3Al − −24.72 −21.72 −22.22 −20.72 −19.22 −18.22 −17.72 −16.22−16.72  −19.72 2Li − 1.5Na − K − B ρ (g/cm³) 2.452 2.459 2.445 2.4382.440 2.441 2.444 2.447  2.443 2.437 α_(30-380° C.) 87.3 94.6 83.6 75.083.0 81.0 85.0 88.5 87.9  78.0 (×10⁻⁷/° C.) Ts (° C.) 856 N.A. N.A. 915889 874 867 861 844    N.A. 10^(2.5) dPa · s 1,518 1,475 1,535 1,5611,560 1,547 1,552 1,535 1,524    1,550 (° C.) TL (° C.) 1,049 916 1,0881,125 1,078 1,085 1,035 976 1,056>    1,125 logη at TL 5.3 6.4 3.9 5.25.4 5.2 5.6 6.1 5.2< 4.9 (dPa · s) Acid resistance N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistanceN.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6h) E (GPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. K_(1C) (MPa· m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K)(MPa) 1,248 1,129 1,292 1,389 1,309 1,248 1,264 1,198 1,152    1,326DOL_ZERO_(K) 20 24 19 16 19 19 21 24 22    18 (μm) CS_(Na) (MPa) 287 201312 279 269 269 248 211 236    299 DOL_ZERO_(Na) 125 121 126 134 123 123128 126 143    136 (μm)

TABLE 2 (mol %) No. 11 No. 12 No. 13 No. 14 No. 15 No. 16 No. 17 No. 18No. 19 No. 20 SiO₂ 63.07 61.07 63.07 63.07 61.07 61.07 60.30 61.07 59.0760.07 Al₂O₃ 15.81 17.81 15.81 17.81 15.81 15.81 18.95 17.81 15.81 17.81B₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.20 0.00 2.00 2.00 Li₂O 8.34 8.347.34 8.34 7.34 8.34 7.22 8.34 8.34 8.34 Na₂O 11.10 11.10 12.10 9.1012.10 11.10 8.20 9.10 13.10 10.10 K₂O 0.00 0.00 0.00 0.00 0.00 0.00 0.440.00 0.00 0.00 MgO 0.00 0.00 0.00 0.00 2.00 2.00 0.26 2.00 0.00 0.00 CaO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO 1.161.16 1.16 1.16 1.16 1.16 0.00 1.16 1.16 1.16 P₂O₅ 0.47 0.47 0.47 0.470.47 0.47 4.28 0.47 0.47 0.47 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.04 0.050.04 0.04 0.04 Fe₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.03 0.00 0.00 0.00TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.00 0.00 0.000.00 0.00 0.00 0.07 0.00 0.00 0.00 Li/(Na + K) 0.75 0.75 0.61 0.92 0.610.75 0.84 0.92 0.64 0.83 (Na + K)/Li 1.33 1.33 1.65 1.09 1.65 1.33 1.201.09 1.57 1.21 Li + Na + K 19.44 19.44 19.44 17.44 19.44 19.44 15.8617.44 21.44 18.44 Li/P 17.73 17.73 15.60 17.73 15.60 17.73 1.69 17.7317.73 17.73 P/Li 0.06 0.06 0.06 0.06 0.06 0.06 0.59 0.06 0.06 0.06 (Na −Li)/ 0.17 0.15 0.29 0.04 0.29 0.17 0.04 0.04 0.26 0.09 (Al + B + P) (B +Na − P)/ 0.44 0.41 0.50 0.33 0.50 0.44 0.16 0.33 0.61 0.44 (Al + Li)Si + 1.2P − 3Al − −17.12 −25.12 −16.62 −20.12 −18.62 −19.12 −18.79−22.12 −26.12 −26.62 2Li − 1.5Na − K − B ρ (g/cm³) 2.454 2.460 2.4572.446 2.471 2.469 2.403 2.463 2.462 2.442 α_(30-380° C.) 86.9 87.1 88.879.4 89.2 88.2 73.5 78.4 92.0 82.3 (×10⁻⁷/° C.) Ts (° C.) N.A. N.A. 823N.A. 806 N.A. 926 N.A. 743 N.A. 10^(2.5) dPa · s 1,527 1,528 1,535 1,5581,489 1,480 1,579 1,507 1,449 1,496 (° C.) TL (° C.) 1,032 1,070 9841,134 957 1,018 1,108 1,230 904 1,089 logη at TL 5.1 5.1 5.7 4.9 5.7 55.5 3.9 5.6 4.9 (dPa · s) Acid resistance N.A. N.A. N.A. N.A. N.A. N.A.19.9 N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A.N.A. N.A. N.A. N.A. 1.5 N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa)80 80 N.A. N.A. N.A. N.A. N.A. N.A. 78 N.A. K_(1C) (MPa · m^(0.5)) N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 967 1,1651,083 1,449 1,170 1,149 1,072 1,460 932 1,293 DOL_ZERO_(K) 18 17 17 1614 12 25 10 14 14 (μm) CS_(Na) (MPa) 278 305 236 304 224 262 260 309 298302 DOL_ZERO_(Na) 116 119 119 137 98 104 126 104 93 107 (μm)

TABLE 3 (mol %) No. 21 No. 22 No. 23 No. 24 No. 25 No. 26 No. 27 No. 28No. 29 No. 30 SiO₂ 60.07 61.07 61.07 61.07 61.07 59.07 59.07 59.07 59.0759.07 Al₂O₃ 15.81 18.81 17.81 16.81 16.81 17.81 16.81 18.81 18.81 17.81B₂O₃ 2.00 2.00 2.00 2.00 2.00 2.00 2.00 2.00 2.00 2.00 Li₂O 8.34 7.347.34 8.34 7.34 7.34 8.34 8.34 7.34 9.34 Na₂O 12.10 9.10 10.10 10.1011.10 12.10 12.10 10.10 11.10 10.10 K₂O 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 MgO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO1.16 1.16 1.16 1.16 1.16 1.16 1.16 1.16 1.16 1.16 P₂O₅ 0.47 0.47 0.470.47 0.47 0.47 0.47 0.47 0.47 0.47 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 0.04 Fe₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Li/(Na + K) 0.69 0.81 0.73 0.830.66 0.61 0.69 0.83 0.66 0.93 (Na + K)/Li 1.45 1.24 1.38 1.21 1.51 1.651.45 1.21 1.51 1.08 Li + Na + K 20.44 16.44 17.44 18.44 18.44 19.4420.44 18.44 18.44 19.44 Li/P 17.73 15.60 15.60 17.73 15.60 15.60 17.7317.73 15.60 19.85 P/Li 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.05(Na − Li)/ 0.21 0.08 0.14 0.09 0.19 0.23 0.19 0.08 0.18 0.04 (Al + B +P) (B + Na − P)/ 0.56 0.41 0.46 0.46 0.52 0.54 0.54 0.43 0.48 0.43 (Al +Li) Si + 1.2P − 3Al − −23.62 −25.12 −23.62 −22.62 −22.12 −28.62 −27.62−30.62 −30.12 −29.62 2Li − 1.5Na − K − B ρ (g/cm³) 2.455 2.438 2.4382.440 2.443 2.452 2.456 2.450 2.450 2.450 α_(30-380° C.) 88.9 73.6 79.683.0 83.7 88.0 90.0 82.0 83.0 84.0 (×10⁻⁷/° C.) Ts (° C.) 756 882 862827 821 819 777 850 856 N.A. 10^(2.5) dPa · s 1,488 1,530 1,530 1,5081,524 1,509 1,474 1,493 1,507 1,480 (° C.) TL (° C.) 967 1,060 1,0781,091 1,030 991 985 1,051 1,040 1,068 logη at TL 5.3 5.5 5.2 4.8 5.3 5.65.3 5.2 5.4 4.8 (dPa · s) Acid resistance N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa)N.A. N.A. N.A. N.A. N.A. 76 78 N.A. N.A. N.A. K_(1C) (MPa · m^(0.5))N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 860 1,4381,385 1,218 1,230 1,264 1,087 1,439 1,433 1,225 DOL_ZERO_(K) 13 12 15 1315 14 14 12 14 12 (μm) CS_(Na) (MPa) 259 297 312 324 271 282 292 309 280340 DOL_ZERO_(Na) 100 111 119 108 111 106 92 112 118 112 (μm)

TABLE 4 (mol %) No. 31 No. 32 No. 33 No. 34 No. 35 No. 36 No. 37 No. 38No. 39 No. 40 SiO₂ 61.07 61.07 61.07 63.58 61.07  61.07  63.40 66.5963.51 60.94 Al₂O₃ 15.81 15.81 17.81 16.55 17.81  19.81  15.88 11.2616.60 13.57 B₂O₃ 2.00 2.00 2.00 0.00 2.00 0.00 0.00 0.00 0.00 0.59 Li₂O7.34 8.34 8.34 8.19 4.34 8.34 6.37 10.19 8.20 0.03 Na₂O 12.10 11.10 9.108.09 13.10  7.10 10.66 5.42 8.12 15.27 K₂O 0.00 0.00 0.00 0.52 0.00 0.000.02 1.41 0.52 3.24 MgO 0.00 0.00 0.00 0.33 0.00 0.00 0.01 3.15 0.303.54 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.02 0.02 0.00 0.00 SrO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 1.290.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.53 0.00 0.00 ZnO1.16 1.16 1.16 0.00 1.16 1.16 1.13 0.00 0.00 0.00 P₂O₅ 0.47 0.47 0.472.70 0.47 2.47 2.49 0.00 2.71 2.62 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.040.00 0.00 0.04 0.14 Fe₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.02 0.00 0.000.01 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.16 0.00 0.00 Cl 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.05 Li/(Na + K) 0.61 0.75 0.92 0.950.33 1.18 0.60 1.49 0.95 0.00 (Na + K)/Li 1.65 1.33 1.09 1.05 3.02 0.851.68 0.67 1.05 617.00 Li + Na + K 19.44 19.44 17.44 16.80 17.44  15.44 17.05 17.02 16.84 18.54 Li/P 15.60 17.73 17.73 3.03 9.23 3.38 2.56 —3.03 0.01 P/Li 0.06 0.06 0.06 0.33 0.11 0.30 0.39 0.00 0.33 87.33 (Na −Li)/ 0.26 0.15 0.04 −0.01 0.43 −0.06  0.23 −0.42 0.00 0.91 (Al + B + P)(B + Na − P)/ 0.59 0.52 0.41 0.22 0.66 0.16 0.37 0.25 0.22 0.97 (Al +Li) Si + 1.2P − 3Al − −20.62 −21.12 −24.12 −11.87 −22.12  −22.72  −10.002.89 −12.14 −3.42 2Li − 1.5Na − K − B ρ (g/cm³) 2.449 2.448 2.435 2.404 2.442  2.437 2.428 N.A. 2.404 2.440 α_(30-380° C.) 87.3 85.9 78.3 79.482.8  67.6  81.3 N.A. N.A. 104.3 (×10⁻⁷/° C.) Ts (° C.) 785 781 N.A.N.A. 891    917    876 N.A. 892 925 10^(2.5) dPa · s 1,508 1,487 1,5191,593 1,564    1,541    1,561 N.A. 1,593 1,588 (° C.) TL (° C.) 938>1,034 1,117 1,145 938>    1,343<    1,008 N.A. 1,145 N.A. logη at TL5.8< 4.9 4.9 5.14 7.0< 3.5> 6.3 N.A. 5.14 N.A. (dPa · s) Acid resistanceN.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. 4.0 N.A. (HCl 5 wt % 80° C. 24h) Alkali resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. 0.6 N.A.(NaOH 5 wt % 80° C. 6 h) E (GPa) N.A. N.A. N.A. 77 N.A. N.A. 77 N.A. 7870 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. CS_(K) (MPa) 1,045 1,026 1,379 1,021 1,474    1,376    N.A. N.A.1,021 N.A. DOL_ZERO_(K) 15 13 14 26 21    11    N.A. N.A. 26 N.A. (μm)CS_(Na) (MPa) 255 280 330 310 163    324    N.A. N.A. 310 N.A.DOL_ZERO_(Na) 105 105 115 131 132    116    N.A. N.A. 131 N.A. (μm)

TABLE 5 (mol %) No. 41 No. 42 No. 43 No. 44 No. 45 No. 46 No. 47 No. 48No. 49 No. 50 SiO₂ 62.24 62.24 60.24 60.24 62.24 62.24 60.24 60.24 58.2456.24 Al₂O₃ 17.81 15.81 17.81 15.81 17.81 15.81 17.81 15.81 17.81 17.81B₂O₃ 2.00 2.00 2.00 2.00 0.00 0.00 0.00 0.00 2.00 2.00 Li₂O 8.34 8.348.34 8.34 8.34 8.34 8.34 8.34 8.34 8.34 Na₂O 9.10 11.10 11.10 13.10 9.1011.10 11.10 13.10 9.10 11.10 K₂O 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.004.00 4.00 MgO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 CaO 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.47 0.47 0.47 0.47 2.472.47 2.47 2.47 0.47 0.47 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 Fe₂O₃ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 TiO₂0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Cl 0.01 0.01 0.01 0.010.01 0.01 0.01 0.01 0.01 0.01 Li/(Na + K) 0.92 0.75 0.75 0.64 0.92 0.750.75 0.64 0.64 0.55 (Na + K)/Li 1.09 1.33 1.33 1.57 1.09 1.33 1.33 1.571.57 1.81 Li + Na + K 17.44 19.44 19.44 21.44 17.44 19.44 19.44 21.4421.44 23.44 Li/P 17.73 17.73 17.73 17.73 3.38 3.38 3.38 3.38 17.73 17.73P/Li 0.06 0.06 0.06 0.06 0.30 0.30 0.30 0.30 0.06 0.06 (Na − Li)/ 0.040.15 0.14 0.26 0.04 0.15 0.14 0.26 0.04 0.14 (Al + B + P) (B + Na − P)/0.41 0.52 0.48 0.61 0.25 0.36 0.33 0.44 0.41 0.48 (Al + Li) Si + 1.2P −3Al − −22.96 −19.96 −27.96 −24.96 −18.56 −15.56 −23.56 −20.56 −30.96−35.96 2Li − 1.5Na − K − B ρ (g/cm³) 2.410 2.426 2.427 2.442 2.413 2.4222.428 2.436 2.442 2.458 α_(30-380° C.) 80.3 86.9 86.9 91.8 80.8 88.688.7 94.8 96.9 103.9 (×10⁻⁷/° C.) Ts (° C.) 877 775 827 738 917 N.A. 877N.A. 773 N.A. 10^(2.5) dPa · s 1,538 1,517 1,516 1,467 1,580 1,548 1,5461,498 1,492 1,461 (° C.) TL (° C.) 1,152 1,047 1,030 914 1,126 1,0291,125 1,066 1,216 941 logη at TL 4.66 4.87 5.33 5.55 5.19 5.62 4.87 4.903.74 5.25 (dPa · s) Acid resistance 34.8< N.A. 34.8< N.A. 34.8 28.534.8< 34.8< N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance 0.8N.A. 0.8 N.A. 0.9 0.8 0.9 0.7 N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa)78 78 78 79 78 77 77 77 78 79 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 1,307 932 1,124 751 1,2621,016 1,151 1,018 810 N.A. DOL_ZERO_(K) 15.7 14.8 15.4 13.1 21.4 24.423.6 26.8 23.1 N.A. (μm) CS_(Na) (MPa) 279 221 272 212 258 197 324 165202 N.A. DOL_ZERO_(Na) 135.7 118.8 116.2 105.0 153.7 158.0 131.9 133.585.6 N.A. (μm)

TABLE 6 (mol %) No. 51 No. 52 No. 53 No. 54 No. 55 No. 56 No. 57 No. 58No. 59 No. 60 SiO₂ 58.24 56.24 61.24 61.24 60.24 62.24 62.24 60.24 60.2462.24 Al₂O₃ 17.81 17.81 16.81 15.81 16.81 15.81 15.81 17.81 15.81 15.81B₂O₃ 0.00 0.00 0.00 0.00 0.00 0.50 0.00 0.00 0.00 0.50 Li₂O 8.34 8.348.34 8.34 8.34 8.34 5.84 5.84 5.84 5.84 Na₂O 9.10 11.10 11.10 12.1012.10 11.10 11.10 11.10 13.10 11.10 K₂O 4.00 4.00 0.00 0.00 0.00 0.002.50 2.50 2.50 2.50 MgO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 2.47 2.47 2.472.47 2.47 1.97 2.47 2.47 2.47 1.97 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 0.04 Fe₂O₃ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.010.01 TiO₂ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Cl 0.01 0.010.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Li/(Na + K) 0.64 0.55 0.75 0.690.69 0.75 0.43 0.43 0.37 0.43 (Na + K)/Li 1.57 1.81 1.33 1.45 1.45 1.332.33 2.33 2.67 2.33 Li + Na + K 21.44 23.44 19.44 20.44 20.44 19.4419.44 19.44 21.44 19.44 Li/P 3.38 3.38 3.38 3.38 3.38 4.23 2.36 2.362.36 2.96 P/Li 0.30 0.30 0.30 0.30 0.30 0.24 0.42 0.42 0.42 0.34 (Na −Li)/ 0.04 0.14 0.14 0.21 0.19 0.15 0.29 0.26 0.40 0.29 (Al + B + P) (B +Na − P)/ 0.25 0.33 0.34 0.40 0.38 0.40 0.40 0.36 0.49 0.44 (Al + Li)Si + 1.2P − 3Al − −26.56 −31.56 −19.56 −18.06 −22.06 −16.66 −13.06−21.06 −18.06 −14.16 2Li − 1.5Na − K − B ρ (g/cm³) 2.442 2.455 2.4232.427 2.431 2.419 2.426 2.432 2.440 2.425 α_(30-380° C.) 99.8 107.4 88.492.1 92.1 87.6 96.7 95.2 102.5 95.3 (×10⁻⁷/° C.) Ts (° C.) N.A. N.A. 860N.A. N.A. N.A. N.A. 893 N.A. N.A. 10^(2.5) dPa · s 1,537 1,494 1,5471,528 1,529 1,537 1,589 1,593 1,544 1,576 (° C.) TL (° C.) 1,120 1,018N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. logη at TL 4.78< 5.39 N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (dPa · s) Acid resistance 34.8< 34.8< N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkaliresistance 0.9 0.9 N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt %80° C. 6 h) E (GPa) 77 77 77 77 77 77 74 75 75 75 K_(1C) (MPa · m^(0.5))N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 889 N.A.915 894 1,173 806 N.A. N.A. N.A. N.A. DOL_ZERO_(K) 36.1 N.A. 28.8 29.931.2 24.9 N.A. N.A. N.A. N.A. (μm) CS_(Na) (MPa) 259 N.A. 255 194 227237 N.A. N.A. N.A. N.A. DOL_ZERO_(Na) 95.1 N.A. 132.3 140.8 150.6 147.3N.A. N.A. N.A. N.A. (μm)

TABLE 7 (mol %) No. 61 No. 62 No. 63 No. 64 No. 65 No. 66 No. 67 No. 68No. 69 No. 70 SiO₂ 63.07 63.07 66.40 66.40 63.07 63.07 63.07 63.07 63.0763.07 Al₂O₃ 16.81 16.81 8.51 8.51 16.81 16.81 16.81 16.81 17.21 15.71B₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.60 0.60 Li₂O 4.34 4.344.21 4.21 4.34 4.34 4.34 4.34 4.34 4.34 Na₂O 14.10 13.10 8.55 8.55 13.1013.10 13.10 13.10 13.10 13.10 K₂O 0.00 1.00 3.73 3.73 0.00 0.00 0.000.00 0.00 0.00 MgO 0.00 0.00 0.00 0.00 1.00 0.00 0.00 0.00 0.00 0.00 CaO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO 1.161.16 6.02 4.02 1.16 1.16 1.16 2.16 1.16 1.16 P₂O₅ 0.47 0.47 0.81 2.810.47 1.47 0.47 0.47 0.47 1.97 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 Fe₂O₃ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01TiO₂ 0.00 0.00 1.74 1.74 0.00 0.00 1.00 0.00 0.00 0.00 Cl 0.01 0.01 0.010.01 0.01 0.01 0.01 0.01 0.01 0.01 Li/(Na + K) 0.31 0.31 0.34 0.34 0.330.33 0.33 0.33 0.33 0.33 (Na + K)/Li 3.25 3.25 2.91 2.91 3.02 3.02 3.023.02 3.02 3.02 Li + Na + K 18.44 18.44 16.48 16.48 17.44 17.44 17.4417.44 17.44 17.44 Li/P 9.23 9.23 5.18 1.50 9.23 2.95 9.23 9.23 9.23 2.20P/Li 0.11 0.11 0.19 0.67 0.11 0.34 0.11 0.11 0.11 0.45 (Na − Li)/ 0.560.51 0.47 0.38 0.51 0.48 0.51 0.51 0.48 0.48 (Al + B + P) (B + Na − P)/0.64 0.60 0.61 0.45 0.60 0.55 0.60 0.60 0.61 0.58 (Al + Li) Si + 1.2P −3Al − −16.62 −16.12 16.89 19.29 −15.12 −13.92 −15.12 −15.12 −16.92−10.62 2Li − 1.5Na − K − B ρ (g/cm³) 2.460 2.461 2.535 2.478 2.460 2.4462.458 2.472 2.448 2.437 α_(30-380° C.) 90.5 93.3 90.6 90.4 86.1 85.886.0 85.2 85.9 85.8 (×10⁻⁷/° C.) Ts (° C.) 890 902 918 N.A. 903 918 903899 904 873 10^(2.5) dPa · s 1,592 1,488 1,603 1,531 1,591 1,613 1,5971,596 1,598 1,599 (° C.) TL (° C.) N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. logη at TL N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. (dPa · s) Acid resistance 33.3< 33.3< 0 N.A. 33.3< 33.3 N.A. N.A.N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance 0.6 0.6 0.6 N.A.0.1 0.7 N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa) 77 77 75 7378 75 76 77 76 74 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. 1,2651,290 1,264 N.A. DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A. 24.6 22.225.4 N.A. (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. 167 170 175N.A. DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. 122.8 127.7 133.1 N.A.(μm)

TABLE 8 (mol %) No. 71 No. 72 No. 73 No. 74 No. 75 No. 76 No. 77 No. 78No. 79 No. 80 SiO₂ 63.07 63.07 63.07 63.22 63.94 66.40 64.76 65.76 64.7665.76 Al₂O₃ 15.71 14.21 17.81 17.00 12.71 10.25 16.25 16.25 16.25 16.25B₂O₃ 0.60 0.60 0.00 0.40 0.40 0.00 0.10 0.10 0.10 0.10 Li₂O 4.34 4.344.34 4.34 8.34 4.21 5.20 5.20 5.70 5.70 Na₂O 13.10 13.10 13.10 13.1011.10 8.55 11.00 11.00 10.50 10.50 K₂O 1.50 1.50 0.00 1.50 0.50 4.231.25 1.25 1.25 1.25 MgO 0.00 0.00 0.00 0.00 0.50 0.00 1.00 0.00 1.000.00 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO1.16 1.16 1.16 0.00 0.00 5.52 0.00 0.00 0.00 0.00 P₂O₅ 0.47 1.97 0.470.40 2.47 0.81 0.40 0.40 0.40 0.40 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 0.04 Fe₂O₃ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.010.01 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.01 0.010.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Li/(Na + K) 0.30 0.30 0.33 0.300.72 0.33 0.42 0.42 0.49 0.49 (Na + K)/Li 3.36 3.36 3.02 3.36 1.39 3.032.36 2.36 2.06 2.06 Li + Na + K 18.94 18.94 17.44 18.94 19.94 16.9817.45 17.45 17.45 17.45 Li/P 9.23 2.20 9.23 10.85 3.38 5.18 13.00 13.0014.25 14.25 P/Li 0.11 0.45 0.11 0.09 0.30 0.19 0.08 0.08 0.07 0.07 (Na −Li)/ 0.52 0.52 0.48 0.49 0.18 0.39 0.35 0.35 0.29 0.29 (Al + B + P) (B +Na − P)/ 0.66 0.63 0.57 0.61 0.43 0.53 0.50 0.50 0.46 0.46 (Al + Li)Si + 1.2P − 3Al − −13.92 −7.62 −18.12 −17.53 −5.46 11.17 −11.76 −10.76−12.01 −11.01 2Li − 1.5Na − K − B ρ (g/cm³) 2.458 2.442 2.454 2.4382.414 2.511 N.A. N.A. N.A. N.A. α_(30-380° C.) 94.4 93.8 84.8 93.3 88.792.8 87.8 88.7 87.7 87.9 (×10⁻⁷/° C.) Ts (° C.) 828 N.A. 937 865 N.A.N.A. 883 899 877 893 10^(2.5) dPa · s 1,582 1,567 1,613 1,611 1,4861,527 1,609 1,639 1,605 1,634 (° C.) TL (° C.) N.A. N.A. N.A. 943 N.A.N.A. 961 965 1,016 1,005 logη at TL N.A. N.A. N.A. 6.69 N.A. N.A. N.A.N.A. N.A. N.A. (dPa · s) Acid resistance N.A. 2.4 N.A. 33.3< 0.1 0 43.248.0 34.1 31.4 (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. 0.2 N.A.0.6 0.6 0.6 0.5 0.6 0.5 0.5 (NaOH 5 wt % 80° C. 6 h) E (GPa) 76 73 77 7676 74 77 76 77 76 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. 1,0731,020 1,058 1,024 DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A. 30.5 32.126.1 30.3 (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. 229 213 235236 DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. 108.0 117.5 115.9 115.1(μm)

TABLE 9 (mol %) No. 81 No. 82 No. 83 No. 84 No. 85 No. 86 No. 87 No. 88No. 89 No. 90 SiO₂ 64.24 64.61 64.61  62.99 63.58 63.58 63.58 62.5866.26 66.26 Al₂O₃ 17.81 17.81 18.81  17.81 16.55 16.55 15.55 17.55 16.2516.25 B₂O₃ 0.00 0.10 0.10 0.10 0.00 0.00 0.00 0.00 0.10 0.10 Li₂O 6.346.34 7.34 8.90 9.19 7.19 8.69 8.19 5.20 5.70 Na₂O 11.10 9.85 7.85 8.907.09 9.09 8.59 8.09 10.50 10.00 K₂O 0.00 1.25 1.25 1.25 0.52 0.52 0.520.52 1.25 1.25 MgO 0.00 0.00 0.00 0.00 0.33 0.33 0.33 0.33 0.00 0.00 CaO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.47 0.00 0.00 0.002.70 2.70 2.70 2.70 0.40 0.40 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 Fe₂O₃ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.01 0.01 0.010.01 0.01 0.01 0.01 0.01 0.01 0.01 Li/(Na + K) 0.57 0.57 0.81 0.88 1.210.75 0.95 0.95 0.44 0.51 (Na + K)/Li 1.75 1.75 1.24 1.14 0.83 1.34 1.051.05 2.26 1.97 Li + Na + K 17.44 17.44 16.44  19.06 16.80 16.80 17.8016.80 16.95 16.95 Li/P 13.48 — — — 3.40 2.66 3.22 3.03 13.00 14.25 P/Li0.07 0.00 0.00 0.00 0.29 0.38 0.31 0.33 0.08 0.07 (Na − Li)/ 0.26 0.200.03 0.00 −0.11 0.10 −0.01 0.00 0.32 0.26 (Al + B + P) (B + Na − P)/0.44 0.41 0.30 0.34 0.17 0.27 0.24 0.21 0.48 0.44 (Al + Li) Si + 1.2P −3Al − −17.96 −17.63 −19.63  −22.95 −12.37 −11.37 −10.62 −15.87 −9.51−9.76 2Li − 1.5Na − K − B ρ (g/cm³) 2.424 2.425  2.424 N.A. 2.402 2.4072.408 2.409 2.416 2.414 α_(30-380° C.) 84.8 86.6 77.5  88.4 79.0 82.084.0 79.7 87.4 86.4 (×10⁻⁷/° C.) Ts (° C.) 949 936 954    N.A. N.A. 915N.A. 915 917 913 10^(2.5) dPa · s 1,617 1,616 1,602    1,556 1,589 1,6101,575 N.A. 1,644 1,648 (° C.) TL (° C.) 1,087 1,080 1,270<    N.A. 1,1801,092 1,107 1,136 990 1,034 logη at TL N.A. 5.91 N.A. N.A. N.A. 5.60N.A. N.A. N.A. 6.24 (dPa · s) Acid resistance 31.9 34.4 34.9  >100 4.14.3 2.2 16.6 12.0 8.4 (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A.0.6 1.4  0.0 0.8 0.7 0.7 0.9 0.6 0.6 (NaOH 5 wt % 80° C. 6 h) E (GPa) 7878 80    N.A. 77 76 77 77 76 76 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 1,315 1,273 1,319   1,071 1,059 1,074 967 1,138 1,045 1,039 DOL_ZERO_(K) 26.9 31.1 22.6 17.3 23.4 30.1 24.9 25.0 38.8 37.0 (μm) CS_(Na) (MPa) 281 294 352    401388 280 288 339 240 260 DOL_ZERO_(Na) 134.0 116.0 108.4   87.0 113.8122.3 120.5 111.5 121.2 129.4 (μm)

TABLE 10 (mol %) No. 91 No. 92 No. 93 No. 94 No. 95 No. 96 No. 97 No. 98No. 99 No. 100 SiO₂ 66.26 65.76 63.36 64.36 63.36 63.36 63.50 63.5063.50  63.50  Al₂O₃ 16.25 16.25 17.81 17.81 17.81 17.81 15.56 17.5615.56  14.56  B₂O₃ 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10Li₂O 4.70 4.70 8.34 8.34 8.84 8.34 8.10 6.10 6.10 6.10 Na₂O 11.00 11.509.10 8.10 8.60 8.60 8.00 8.00 10.00  11.00  K₂O 1.25 1.25 1.25 1.25 1.251.75 2.15 2.15 2.15 2.15 MgO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.40 0.400.00 0.00 0.00 0.00 2.55 2.55 2.55 2.55 SnO₂ 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 0.04 0.04 Fe₂O₃ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.010.01 0.01 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.010.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Li/(Na + K) 0.38 0.37 0.810.89 0.90 0.81 0.80 0.60 0.50 0.46 (Na + K)/Li 2.61 2.71 1.24 1.12 1.111.24 1.25 1.66 1.99 2.16 Li + Na + K 16.95 17.45 18.69 17.69 18.69 18.6918.25 16.25 18.25  19.25  Li/P 11.75 11.75 — — — — 3.18 2.39 2.39 2.39P/Li 0.09 0.09 0.00 0.00 0.00 0.00 0.31 0.42 0.42 0.42 (Na − Li)/ 0.380.41 0.04 −0.01 −0.01 0.01 −0.01 0.09 0.21 0.28 (Al + B + P) (B + Na −P)/ 0.51 0.53 0.35 0.31 0.33 0.33 0.23 0.23 0.35 0.41 (Al + Li) Si +1.2P − 3Al − −9.26 −10.51 −21.75 −19.25 −22.00 −21.50 −10.57 −12.57−9.57  −8.07  2Li − 1.5Na − K − B ρ (g/cm³) 2.413 2.418 2.431 2.4222.429 2.431 2.409 2.404  2.414  2.418 α_(30-380° C.) 87.9 89.5 86.3 84.186.9 87.9 87.9 82.6 91.4  93.7  (×10⁻⁷/° C.) Ts (° C.) 923 902 N.A. N.A.N.A. N.A. N.A. 938 860    880    10^(2.5) dPa · s 1,658 1,656 1,5721,595 1,570 1,578 1,579 1,630 1,606    1,574    (° C.) TL (° C.) 939 9161,092 1,137 1,113 1,084 1,020 1,036 1,014>    1,014>    logη at TL N.A.N.A. N.A. 5.20 N.A. N.A. N.A. 6.41 N.A. N.A. (dPa · s) Acid resistance16.7 78.6< 76.4< 74.7< 78.2< 78.3< 4.8 16.2 8.0  1.2  (HCl 5 wt % 80° C.24 h) Alkali resistance 0.6 0.6 0.6 0.6 0.6 0.5 0.8 0.9 0.8  0.6  (NaOH5 wt % 80° C. 6 h) E (GPa) 75 75 80 80 80 79 76 75 74    74    K_(1C)(MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K)(MPa) 1,075 1,021 1,033 1,142 1,020 1,023 843 1,046 895 N.A.DOL_ZERO_(K) 39.2 37.5 25.3 27.3 24.7 27.4 40.7 44.4 46.9  N.A. (μm)CS_(Na) (MPa) 234 235 354 401 383 360 287 282 218    N.A. DOL_ZERO_(Na)114.9 113.2 119.5 113.8 100.6 104.9 113.8 113.0 108.3   N.A. (μm)

TABLE 11 (mol %) No. 101 No. 102 No. 103 No. 104 No. 105 No. 106 No. 107No. 108 No. 109 No. 110 SiO₂ 62.89 62.89 62.89 62.89 62.96 63.36 62.9662.96 65.65 64.10 Al₂O₃ 17.81 18.81 17.81 16.81 18.81 18.81 18.81 18.1017.56 18.10 B₂O₃ 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 Li₂O8.34 7.34 7.34 8.34 7.34 7.34 7.34 8.72 6.10 6.33 Na₂O 9.10 9.10 10.1010.10 8.60 8.60 8.60 7.93 8.00 8.24 K₂O 1.25 1.25 1.25 1.25 0.75 0.750.75 0.75 2.15 1.69 MgO 0.00 0.00 0.00 0.00 1.00 1.00 0.00 0.00 0.000.00 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.47 0.47 0.470.47 0.40 0.00 1.40 1.40 0.40 1.40 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 0.04 Fe₂O₃ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.010.01 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.01 0.010.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Li/(Na + K) 0.81 0.71 0.65 0.730.79 0.79 0.79 1.00 0.60 0.64 (Na + K)/Li 1.24 1.41 1.55 1.36 1.27 1.271.27 1.00 1.66 1.57 Li + Na + K 18.69 17.69 18.69 19.69 16.69 16.6916.69 17.40 16.25 16.26 Li/P 17.74 15.62 15.62 17.74 18.35 — 5.24 6.2315.25 4.52 P/Li 0.06 0.06 0.06 0.06 0.05 0.00 0.19 0.16 0.07 0.22 (Na −Li)/ 0.04 0.09 0.15 0.10 0.07 0.07 0.06 −0.04 0.11 0.10 (Al + B + P)(B + Na − P)/ 0.33 0.33 0.39 0.39 0.32 0.33 0.28 0.25 0.33 0.28 (Al +Li) Si + 1.2P − 3Al − −21.65 −22.65 −21.15 −20.15 −21.42 −21.50 −20.22−19.84 −13.00 −15.33 2Li − 1.5Na − K − B ρ (g/cm³) 2.427 2.426 2.4302.434 2.430 2.433 2.417 2.413 2.417 2.414 α_(30-380° C.) 87.9 82.6 91.493.7 78.1 79.0 79.0 81.4 81.9 80.2 (×10⁻⁷/° C.) Ts (° C.) N.A. 930 887N.A. 921 927 937 915 974 963 10^(2.5) dPa · s 1,569 1,584 1,584 1,5561,571 1,573 1,594 1,574 1,653 1,636 (° C.) TL (° C.) 1,110 1,086 1,0591,032 N.A. N.A. N.A. N.A. 1,173 1,204 logη at TL N.A. 5.71 N.A. N.A.N.A. N.A. N.A. N.A. 5.40 5.00 (dPa · s) Acid resistance 67.5 77.1 76.661.0 55.7 51.8 38.4 36.0 35.9 33.8 (HCl 5 wt % 80° C. 24 h) Alkaliresistance 0.5 0.7 0.5 0.5 0.8 0.7 1.0 0.8 0.7 0.9 (NaOH 5 wt % 80° C. 6h) E (GPa) 79 79 78 79 80 81 78 78 78 77 K_(1C) (MPa · m^(0.5)) N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 1,055 1,1761,056 894 1,301 1,345 1,227 1,160 1,195 1,171 DOL_ZERO_(K) 29.0 29.429.6 25.3 18.7 18.1 21.3 21.8 31.5 32.7 (μm) CS_(Na) (MPa) 354 313 295330 345 362 324 351 290 303 DOL_ZERO_(Na) 108.5 121.7 124.0 102.4 108.497.4 108.6 123.7 108.7 104.6 (μm)

TABLE 12 (mol %) No. 111 No. 112 No. 113 No. 114 No. 115 No. 116 No. 117No. 118 No. 119 No. 120 SiO₂ 64.10 62.60 64.50 64.50 64.50 64.50 64.5064.50 64.50 64.50 Al₂O₃ 18.10 18.10 18.50 18.50 18.50 18.50 18.50 18.5018.50 18.50 B₂O₃ 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 Li₂O6.33 6.33 6.00 7.00 8.00 6.00 7.00 8.00 6.00 7.00 Na₂O 8.24 8.94 6.005.00 4.00 7.00 6.00 5.00 8.00 7.00 K₂O 0.04 0.84 0.76 0.76 0.76 0.760.76 0.76 0.76 0.76 MgO 0.00 0.00 0.10 0.10 0.10 0.10 0.10 0.10 0.100.10 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 3.05 3.05 4.004.00 4.00 3.00 3.00 3.00 2.00 2.00 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 0.04 Fe₂O₃ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.010.01 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.01 0.010.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Li/(Na + K) 0.76 0.65 0.89 1.221.68 0.77 1.04 1.39 0.68 0.90 (Na + K)/Li 1.31 1.55 1.13 0.82 0.60 1.290.97 0.72 1.46 1.11 Li + Na + K 14.61 16.11 12.76 12.76 12.76 13.7613.76 13.76 14.76 14.76 Li/P 2.08 2.08 1.50 1.75 2.00 2.00 2.33 2.673.00 3.50 P/Li 0.48 0.48 0.67 0.57 0.50 0.50 0.43 0.38 0.33 0.29 (Na −Li)/ 0.09 0.12 0.00 −0.09 −0.18 0.05 −0.05 −0.14 0.10 0.00 (Al + B + P)(B + Na − P)/ 0.22 0.25 0.09 0.04 0.00 0.17 0.12 0.08 0.25 0.20 (Al +Li) Si + 1.2P − 3Al − −11.70 −15.05 −8.06 −8.56 −9.06 −10.76 −11.26−11.76 −13.46 −13.96 2Li − 1.5Na − K − B ρ (g/cm³) 2.396 2.405 2.3812.379 2.377 2.395 2.393 2.391 2.407 2.405 α_(30-380° C.) 71.2 78.7 61.760.2 59.5 66.8 65.2 64.0 71.9 70.2 (×10⁻⁷/° C.) Ts (° C.) 966 947 981972 966 976 968 961 974 965 10^(2.5) dPa · s 1,635 1,642 1,644 1,6321,618 1,636 1,623 1,612 1,630 1,618 (° C.) TL (° C.) 1,261 1,086 N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. logη at TL 4.60 5.93 N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. (dPa · s) Acid resistance 3.9 14.1 1.6 1.9 1.53.0 2.5 2.3 5.2 4.3 (HCl 5 wt % 80° C. 24 h) Alkali resistance 1.2 1.1N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa)76 75 76 77 77 77 77 78 77 78 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 1,128 1,106 963 962 963 1,0471,049 1,055 1,149 1,141 DOL_ZERO_(K) 21.8 28.9 20.5 21.1 18.6 24.2 21.918.6 24.6 22.0 (μm) CS_(Na) (MPa) 276 262 202 287 286 223 276 286 234276 DOL_ZERO_(Na) 132.6 122.6 134.4 119.2 125.3 132.8 124.9 123.6 128.1123.7 (μm)

TABLE 13 (mol %) No. 121 No. 122 No. 123 No. 124 No. 125 No. 126 No. 127No. 128 No. 129 No. 130 SiO₂ 64.50 64.50 64.50 64.50 64.50 64.50 64.5064.50 64.50 64.50 Al₂O₃ 18.50 18.50 18.50 18.50 18.50 18.50 18.50 18.5018.50 18.50 B₂O₃ 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 Li₂O8.00 6.38 7.38 8.38 6.38 7.38 8.38 6.38 7.38 8.38 Na₂O 6.00 6.38 5.384.38 7.38 6.38 5.38 8.38 7.38 6.38 K₂O 0.76 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 MgO 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.100.10 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 2.00 4.00 4.004.00 3.00 3.00 3.00 2.00 2.00 2.00 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 0.04 Fe₂O₃ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.010.01 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.01 0.010.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Li/(Na + K) 1.18 1.00 1.37 1.910.86 1.16 1.56 0.76 1.00 1.31 (Na + K)/Li 0.85 1.00 0.73 0.52 1.16 0.860.64 1.31 1.00 0.76 Li + Na + K 14.76 12.76 12.76 12.76 13.76 13.7613.76 14.76 14.76 14.76 Li/P 4.00 1.60 1.85 2.10 2.13 2.46 2.79 3.193.69 4.19 P/Li 0.25 0.63 0.54 0.48 0.47 0.41 0.36 0.31 0.27 0.24 (Na −Li)/ −0.10 0.00 −0.09 −0.18 0.05 −0.05 −0.14 0.10 0.00 −0.10 (Al + B +P) (B + Na − P)/ 0.15 0.10 0.06 0.02 0.18 0.13 0.09 0.26 0.21 0.17 (Al +Li) Si + 1.2P − 3Al − −14.46 −8.63 −9.13 −9.63 −11.33 −11.83 −12.33−14.03 −14.53 −15.03 2Li − 1.5Na − K − B ρ (g/cm³) 2.402 N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. α_(30-380° C.) 69 N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (×10⁻⁷/° C.) Ts (° C.) 957 N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. 10^(2.5) dPa · s 1,609 N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. (° C.) TL (° C.) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. logη at TL N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.(dPa · s) Acid resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 1,129 N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(K) 20.4 N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. (μm)

TABLE 14 (mol %) No. 131 No. 132 No. 133 No. 134 No. 135 No. 136 No. 137No. 138 No. 139 No. 140 SiO₂ 61.30 61.00 60.20 59.80 59.80 60.50 61.0060.50 61.00 60.50 Al₂O₃ 15.40 15.00 15.40 16.50 15.40 15.00 15.00 15.0015.00 15.00 B₂O₃ 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 Li₂O7.80 8.00 8.00 7.80 7.80 8.00 9.00 9.00 7.00 7.00 Na₂O 7.00 7.80 7.807.00 7.00 7.80 6.80 6.80 8.80 8.80 K₂O 2.50 1.50 1.50 2.50 2.50 1.501.50 1.50 1.50 1.50 MgO 2.36 2.06 2.46 3.46 2.36 2.06 2.06 2.06 2.062.06 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 3.50 4.50 4.502.80 4.00 5.00 4.50 5.00 4.50 5.00 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 0.04 Fe₂O₃ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.010.01 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.01 0.010.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Li/(Na + K) 0.82 0.86 0.86 0.820.82 0.86 1.08 1.08 0.68 0.68 (Na + K)/Li 1.22 1.16 1.16 1.22 1.22 1.160.92 0.92 1.47 1.47 Li + Na + K 17.30 17.30 17.30 17.30 17.30 17.3017.30 17.30 17.30 17.30 Li/P 2.23 1.78 1.78 2.79 1.95 1.60 2.00 1.801.56 1.40 P/Li 0.45 0.56 0.56 0.36 0.51 0.63 0.50 0.56 0.64 0.71 (Na −Li)/ −0.04 −0.01 −0.01 −0.04 −0.04 −0.01 −0.11 −0.11 0.09 0.09 (Al + B +P) (B + Na − P)/ 0.16 0.15 0.15 0.18 0.13 0.13 0.10 0.08 0.20 0.18 (Al +Li) Si + 1.2P − 3Al − −9.40 −7.90 −9.90 −15.04 −10.30 −7.80 −8.40 −8.30−7.40 −7.30 2Li − 1.5Na − K − B ρ (g/cm³) 2.418 2.410 2.415 2.435 2.4172.408 2.408 2.405 2.413 2.411 α_(30-380° C.) 86.5 86.2 86.5 86.3 87.486.4 84.6 84.9 88.1 88.5 (×10⁻⁷/° C.) Ts (° C.) 883 875 873 N.A. 879 872870 864 881 876 10^(2.5) dPa · s 1,560 1,554 1,545 1,524 1,553 1,5541,546 1,543 1,566 1,565 (° C.) TL (° C.) 1,034 1,022 N.A. 1,040 N.A.1,012 1,080 1,069 992 989 logη at TL 5.56 5.47 N.A. 5.53 N.A. 5.46 N.A.N.A. N.A. N.A. (dPa · s) Acid resistance 4.6 2.2 0.4 38.8 N.A. 2.3 1.82.1 2.2 2.4 (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A. 1.1N.A. N.A. N.A. 1.0 1.1 1.2 1.2 (NaOH 5 wt % 80° C. 6 h) E (GPa) 76 75N.A. 79 N.A. 77 76 75 75 74 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 919 878 920 1,015 916 873 912886 923 897 DOL_ZERO_(K) 35.8 36.5 36.1 29.9 38.0 34.6 29.5 31.8 36.236.7 (μm) CS_(Na) (MPa) 228 223 N.A. 257 N.A. 173 283 291 228 228DOL_ZERO_(Na) 108.5 123.2 N.A. 95.5 N.A. 123.5 122.0 119.1 117.8 111.7(μm)

TABLE 15 (mol %) No. 141 No. 142 No. 143 No. 144 No. 145 No. 146 No. 147No. 148 No. 149 No. 150 SiO₂ 58.44 61.24 68.18 68.18 61.28 60.38 68.1870.18 61.38 60.28 Al₂O₃ 16.15 15.40 9.50 9.50 15.40 16.15 9.50 9.5018.50 18.80 B₂O₃ 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 Li₂O9.25 8.64 9.00 8.00 7.80 9.25 9.00 9.00 6.80 7.20 Na₂O 6.75 6.46 8.168.16 7.00 6.75 6.16 6.16 8.40 8.10 K₂O 0.75 2.50 3.00 3.00 2.50 0.753.00 3.00 0.30 0.45 MgO 4.00 2.40 2.00 3.00 2.36 2.06 4.00 2.00 0.500.50 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 4.50 3.20 0.000.00 3.50 4.50 0.00 0.00 3.96 4.30 SnO₂ 0.04 0.04 0.04 0.04 0.04 0.040.04 0.04 0.04 0.16 Fe₂O₃ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.010.01 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.01 0.010.01 0.01 0.01 0.01 0.01 0.01 0.01 0.10 Li/(Na + K) 1.23 0.96 0.81 0.720.82 1.23 0.98 0.98 0.78 0.84 (Na + K)/Li 0.81 1.04 1.24 1.40 1.22 0.811.02 1.02 1.28 1.19 Li + Na + K 16.75 17.60 20.16 19.16 17.30 16.7518.16 18.16 15.50 15.75 Li/P 2.06 2.70 — — 2.23 2.06 — — 1.72 1.67 P/Li0.49 0.37 0.00 0.00 0.45 0.49 0.00 0.00 0.58 0.60 (Na − Li)/ −0.12 −0.12−0.09 0.02 −0.04 −0.12 −0.30 −0.30 0.07 0.04 (Al + B + P) (B + Na − P)/0.09 0.14 0.45 0.47 0.16 0.09 0.34 0.34 0.18 0.15 (Al + Li) Si + 1.2P −3Al − −14.09 −10.69 6.34 8.34 −9.42 −12.15 9.34 11.34 −15.97 −18.06 2Li− 1.5Na − K − B ρ (g/cm³) 2.425 2.420 2.428 2.426 2.418 2.409 2.4242.410 2.402 N.A. α_(30-380° C.) 80.6 87.4 94.3 95.9 87.5 79.5 88.8 86.774.9 N.A. (×10⁻⁷/° C.) Ts (° C.) N.A. N.A. 701 685 884 N.A. 713 713 931N.A. 10^(2.5) dPa · s 1,492 1,537 1,427 1,435 1,556 1,534 1,445 1,4791,596 N.A. (° C.) TL (° C.) 1,117 1,055 879 884 N.A. N.A. N.A. N.A.1,080 N.A. logη at TL 4.46 5.28 N.A. N.A. N.A. N.A. N.A. N.A. 5.82 N.A.(dPa · s) Acid resistance 8.9 3.9 0.0 0.0 3.8 5.4 0.0 0.0 1.7 N.A. (HCl5 wt % 80° C. 24 h) Alkali resistance 1.3 1.0 0.6 0.6 0.9 1.1 0.5 0.61.2 N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa) 78 77 78 77 76 77 79 78 N.A.N.A. K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. CS_(K) (MPa) 1,006 934 506 473 943 957 561 508 1,067 N.A.DOL_ZERO_(K) 22.0 36.5 17.3 19.8 38.3 25.9 14.7 19.0 25.0 N.A. (μm)CS_(Na) (MPa) 338 312 136 175 N.A. N.A. N.A. N.A. 291 N.A. DOL_ZERO_(Na)116.3 101.3 78.7 62.3 N.A. N.A. N.A. N.A. 132.5 N.A. (μm)

TABLE 16 (mol %) No. 151 No. 152 No. 153 No. 154 No. 155 No. 156 No. 157No. 158 No. 159 No. 160 SiO₂ 60.04 60.36 60.53 60.72 60.43 66.16 64.1262.82 62.35 61.84 Al₂O₃ 18.94 18.57 18.51 18.51 18.76 11.85 14.09 15.4415.95 16.51 B₂O₃ 0.10 0.12 0.11 0.11 0.10 0.36 0.31 0.33 0.31 0.21 Li₂O7.50 7.13 6.91 6.82 7.22 0.52 2.61 3.81 4.24 4.81 Na₂O 7.85 8.21 8.388.48 8.08 14.66 12.79 11.74 11.34 10.87 K₂O 0.30 0.35 0.49 0.49 0.441.29 1.03 0.87 0.81 0.74 MgO 0.50 0.72 0.67 0.67 0.52 4.64 3.40 2.622.35 2.06 CaO 0.00 0.00 0.00 0.00 0.00 0.03 0.03 0.03 0.03 0.03 SrO 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 4.50 4.284.13 3.94 4.31 0.23 1.43 2.16 2.45 2.77 SnO₂ 0.16 0.16 0.16 0.16 0.050.15 0.12 0.09 0.09 0.08 Fe₂O₃ 0.01 0.01 0.01 0.01 0.00 0.00 0.00 0.000.00 0.00 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.01 0.01 0.01 Cl 0.100.10 0.10 0.10 0.10 0.10 0.08 0.07 0.07 0.07 Li/(Na + K) 0.92 0.83 0.780.76 0.85 0.03 0.19 0.30 0.35 0.41 (Na + K)/Li 1.09 1.20 1.28 1.32 1.1830.48 5.30 3.31 2.87 2.42 Li + Na + K 15.65 15.69 15.78 15.78 15.7416.47 16.42 16.41 16.39 16.42 Li/P 1.67 1.67 1.67 1.73 1.67 2.29 1.821.76 1.73 1.74 P/Li 0.60 0.60 0.60 0.58 0.60 0.44 0.55 0.57 0.58 0.58(Na − Li)/ 0.01 0.05 0.06 0.07 0.04 1.14 0.64 0.44 0.38 0.31 (Al + B +P) (B + Na − P)/ 0.13 0.16 0.17 0.18 0.15 1.20 0.70 0.51 0.46 0.39 (Al +Li) Si + 1.2P − 3Al − −18.55 −17.25 −17.04 −17.03 −17.78 6.19 −2.16−7.33 −9.16 −11.24 2Li − 1.5Na − K − B ρ (g/cm³) N.A. N.A. N.A. N.A.N.A. 2.448 2.439 2.433 2.429 2.426 α_(30-380° C.) N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (×10⁻⁷/° C.) Ts (° C.) N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. 10^(2.5) dPa · s N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. (° C.) TL (° C.) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. logη at TL N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. (dPa · s) Acid resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa) N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. K_(1C) (MPa · m^(0.5)) N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. 1,164 1,151 DOL_ZERO_(K) N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. 31.6 29 (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. 168 198 DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. 92.8 89.6 (μm)

TABLE 17 (mol %) No. 161 No. 162 No. 163 No. 164 No. 165 No. 166 No. 167No. 168 No. 169 No. 170 SiO₂ 61.42 61.13 60.80 60.45 60.27 60.09 59.8859.76 59.64 59.64 Al₂O₃ 16.87 17.24 17.62 17.85 18.12 18.35 18.55 18.7318.81 18.91 B₂O₃ 0.26 0.24 0.22 0.27 0.26 0.20 0.23 0.22 0.17 0.20 Li₂O5.23 5.55 5.91 6.31 6.51 6.74 7.02 7.17 7.41 7.41 Na₂O 10.52 10.19 9.859.57 9.34 9.13 8.91 8.74 8.64 8.53 K₂O 0.70 0.66 0.62 0.59 0.56 0.530.51 0.49 0.48 0.47 MgO 1.85 1.65 1.44 1.29 1.16 1.04 0.90 0.79 0.710.65 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 2.97 3.17 3.373.50 3.64 3.76 3.86 3.95 4.00 4.05 SnO₂ 0.08 0.07 0.07 0.06 0.06 0.060.05 0.05 0.05 0.05 Fe₂O₃ 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.030.03 TiO₂ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Cl 0.07 0.070.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 Li/(Na + K) 0.47 0.51 0.56 0.620.66 0.70 0.74 0.78 0.81 0.82 (Na + K)/Li 2.14 1.96 1.77 1.61 1.52 1.431.34 1.29 1.23 1.22 Li + Na + K 16.45 16.40 16.38 16.46 16.41 16.4016.44 16.41 16.52 16.41 Li/P 1.76 1.75 1.76 1.80 1.79 1.79 1.82 1.811.85 1.83 P/Li 0.57 0.57 0.57 0.56 0.56 0.56 0.55 0.55 0.54 0.55 (Na −Li)/ 0.26 0.23 0.19 0.15 0.13 0.11 0.08 0.07 0.05 0.05 (Al + B + P) (B +Na − P)/ 0.35 0.32 0.28 0.26 0.24 0.22 0.21 0.19 0.18 0.18 (Al + Li)Si + 1.2P − 3Al − −12.82 −14.08 −15.46 −16.74 −17.57 −18.34 −19.28−19.86 −20.40 −20.51 2Li − 1.5Na − K − B ρ (g/cm³) 2.423 2.420 2.4182.416 2.415 2.413 2.412 2.411 2.410 2.409 α_(30-380° C.) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. (×10⁻⁷/° C.) Ts (° C.) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. 10^(2.5) dPa · s N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (° C.) TL (° C.) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. logη at TL N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. (dPa · s) Acid resistance N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa)N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. K_(1C) (MPa · m^(0.5))N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 1,1381,133 1,126 1,122 1,122 1,112 1,114 1,114 1,117 1,100 DOL_ZERO_(K) 26.124.8 24.1 23.4 22.8 22.3 22.4 22.3 21.4 22.2 (μm) CS_(Na) (MPa) 214 216218 235 236 253 259 260 249 268 DOL_ZERO_(Na) 90.4 96.7 102.8 95 96.597.5 101.5 98.4 107 99.7 (μm)

TABLE 18 (mol %) No. 171 No. 172 No. 173 No. 174 No. 175 No. 176 No. 177No. 178 No. 179 No. 180 SiO₂ 59.63 59.52 59.57 59.69 59.77 59.89 59.9759.86 59.91 59.97 Al₂O₃ 18.99 19.00 18.99 18.99 18.94 18.94 18.97 18.9718.98 18.93 B₂O₃ 0.16 0.19 0.21 0.23 0.20 0.12 0.10 0.13 0.18 0.19 Li₂O7.49 7.65 7.65 7.54 7.57 7.55 7.51 7.66 7.57 7.53 Na₂O 8.45 8.38 8.348.30 8.27 8.27 8.24 8.22 8.21 8.22 K₂O 0.47 0.47 0.46 0.46 0.46 0.460.45 0.45 0.45 0.45 MgO 0.58 0.53 0.48 0.45 0.43 0.40 0.37 0.33 0.310.34 CaO 0.00 0.00 0.03 0.00 0.00 0.00 0.00 0.00 0.00 0.02 SrO 0.00 0.000.00 0.03 0.00 0.00 0.00 0.00 0.00 0.01 BaO 0.03 0.00 0.00 0.00 0.030.03 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.03 0.030.03 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 4.10 4.12 4.154.18 4.20 4.22 4.24 4.24 4.23 4.22 SnO₂ 0.05 0.05 0.05 0.05 0.05 0.050.05 0.05 0.04 0.05 Fe₂O₃ 0.00 0.03 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 TiO₂ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Cl 0.06 0.060.06 0.06 0.06 0.06 0.06 0.06 0.07 0.06 Li/(Na + K) 0.84 0.86 0.87 0.860.87 0.87 0.86 0.88 0.88 0.87 (Na + K)/Li 1.19 1.16 1.15 1.16 1.15 1.161.16 1.13 1.14 1.15 Li + Na + K 16.41 16.49 16.45 16.30 16.31 16.2716.20 16.32 16.23 16.20 Li/P 1.83 1.86 1.84 1.80 1.80 1.79 1.77 1.811.79 1.79 P/Li 0.55 0.54 0.54 0.55 0.55 0.56 0.56 0.55 0.56 0.56 (Na −Li)/ 0.04 0.03 0.03 0.03 0.03 0.03 0.03 0.02 0.03 0.03 (Al + B + P) (B +Na − P)/ 0.17 0.17 0.16 0.16 0.16 0.16 0.15 0.15 0.16 0.16 (Al + Li)Si + 1.2P − 3Al − −20.70 −21.06 −20.91 −20.50 −20.23 −19.96 −19.80−20.17 −20.04 −19.78 2Li − 1.5Na − K − B ρ (g/cm³) 2.408 2.408 2.4072.406 2.405 2.404 2.403 2.403 2.403 2.403 α_(30-380° C.) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. (×10⁻⁷/° C.) Ts (° C.) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. 10^(2.5) dPa · s N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (° C.) TL (° C.) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. logη at TL N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. (dPa · s) Acid resistance N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa)N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. K_(1C) (MPa · m^(0.5))N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 1,1031,103 1,102 1,108 1,108 1,108 1,112 1,104 1,109 1,108 DOL_ZERO_(K) 21.721.3 21.3 22 23.4 23.6 23.7 23.5 23.3 24.4 (μm) CS_(Na) (MPa) 273 274264 276 258 251 262 271 269 264 DOL_ZERO_(Na) 100.7 94.9 100.5 106.5106.7 91.2 101.7 98.4 106.3 99.6 (μm)

TABLE 19 (mol %) No. 181 No. 182 No. 183 No. 184 No. 185 No. 18 6 No.187 No. 188 No. 189 No. 190 SiO₂ 60.13 60.16 60.18 60.28 60.15 60.2060.14 60.38 60.38 60.38 Al₂O₃ 18.91 18.92 18.91 18.95 18.93 18.95 18.9518.57 18.57 18.57 B₂O₃ 0.18 0.19 0.22 0.20 0.22 0.17 0.18 0.10 0.10 0.10Li₂O 7.42 7.38 7.37 7.22 7.40 7.39 7.45 7.13 7.63 7.13 Na₂O 8.20 8.188.18 8.20 8.17 8.17 8.17 8.21 8.21 8.21 K₂O 0.45 0.45 0.44 0.44 0.440.43 0.43 0.35 0.35 0.85 MgO 0.32 0.29 0.27 0.26 0.23 0.22 0.20 0.720.72 0.72 CaO 0.01 0.02 0.02 0.03 0.01 0.01 0.00 0.00 0.00 0.00 SrO 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.01 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 ZrO₂ 0.01 0.01 0.01 0.00 0.02 0.02 0.020.00 0.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 4.24 4.274.27 4.28 4.29 4.30 4.30 4.28 3.78 3.78 SnO₂ 0.04 0.04 0.04 0.05 0.050.05 0.05 0.16 0.16 0.16 Fe₂O₃ 0.00 0.00 0.00 0.01 0.01 0.01 0.02 0.000.00 0.00 TiO₂ 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.00 0.00 0.00 Cl 0.070.07 0.07 0.07 0.08 0.08 0.08 0.10 0.10 0.10 Li/(Na + K) 0.86 0.86 0.850.84 0.86 0.86 0.87 0.83 0.89 0.79 (Na + K)/Li 1.16 1.17 1.17 1.20 1.161.17 1.15 1.20 1.12 1.27 Li + Na + K 16.06 16.01 16.00 15.87 16.01 16.0016.05 15.69 16.19 16.19 Li/P 1.75 1.73 1.73 1.69 1.73 1.72 1.73 1.672.02 1.89 P/Li 0.57 0.58 0.58 0.59 0.58 0.58 0.58 0.60 0.50 0.53 (Na −Li)/ 0.03 0.03 0.03 0.04 0.03 0.03 0.03 0.05 0.03 0.05 (Al + B + P) (B +Na − P)/ 0.16 0.16 0.16 0.16 0.16 0.15 0.15 0.16 0.17 0.18 (Al + Li)Si + 1.2P − 3Al − −19.28 −19.14 −19.09 −18.83 −19.22 −19.12 −19.32−17.22 −18.82 −18.32 2Li − 1.5Na − K − B ρ (g/cm³) 2.402 2.402 2.4022.401 N.A. N.A. 2.401 2.407 2.411 2.413 α_(30-380° C.) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. (×10⁻⁷/° C.) Ts (° C.) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. 10^(2.5) dPa · s N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (° C.) TL (° C.) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. logη at TL N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. (dPa · s) Acid resistance N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa)N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. K_(1C) (MPa · m^(0.5))N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 1,1011,094 1,100 1,093 1,096 N.A. N.A. 1,064 1,086 1,067 DOL_ZERO_(K) 24.824.5 23.6 24.3 23.7 N.A. N.A. 27 23 28 (μm) CS_(Na) (MPa) 272 269 249246 244 N.A. N.A. 271 294 263 DOL_ZERO_(Na) 110.8 103.2 111.7 103.1 105N.A. N.A. 132 127 131 (μm)

TABLE 20 (mol %) No. 191 No. 192 No. 193 No. 194 No. 195 No. 196 No. 197No. 198 No. 199 No. 200 SiO₂ 60.28 60.28 60.28 59.88 59.88 59.78 59.7860.33 60.36 60.38 Al₂O₃ 18.67 18.67 18.67 18.57 18.57 18.67 18.67 18.818.8 18.8 B₂O₃ 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 Li₂O7.13 7.63 7.13 7.63 7.13 7.63 7.13 7.20 7.20 7.20 Na₂O 8.21 8.21 8.218.21 8.21 8.21 8.21 8.10 8.10 8.10 K₂O 0.35 0.35 0.85 0.35 0.85 0.350.85 0.45 0.45 0.45 MgO 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.50 0.500.50 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 4.28 3.78 3.784.28 4.28 4.28 4.28 4.30 4.30 4.30 SnO₂ 0.16 0.16 0.16 0.16 0.16 0.160.16 0.116 0.093 0.07 Fe₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl 0.10 0.100.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 Li/(Na + K) 0.83 0.89 0.79 0.890.79 0.89 0.79 0.84 0.84 0.84 (Na + K)/Li 1.20 1.12 1.27 1.12 1.27 1.121.27 1.19 1.19 1.19 Li + Na + K 15.69 16.19 16.19 16.19 16.19 16.1916.19 15.75 15.75 15.75 Li/P 1.67 2.02 1.89 1.78 1.67 1.78 1.67 1.671.67 1.67 P/Li 0.60 0.50 0.53 0.56 0.60 0.56 0.60 0.60 0.60 0.60 (Na −Li)/ 0.05 0.03 0.05 0.03 0.05 0.03 0.05 0.04 0.04 0.04 (Al + B + P) (B +Na − P)/ 0.16 0.17 0.18 0.15 0.16 0.15 0.16 0.15 0.15 0.15 (Al + Li)Si + 1.2P − 3Al − −17.62 −19.22 −18.72 −18.72 −18.22 −19.12 −18.62−18.01 −17.98 −17.96 2Li − 1.5Na − K − B ρ (g/cm³) 2.408 2.412 2.4132.410 2.410 2.410 2.411 2.405 2.405 2.404 α_(30-380° C.) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. (×10⁻⁷/° C.) Ts (° C.) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. 10^(2.5) dPa · s N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (° C.) TL (° C.) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. logη at TL N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. (dPa · s) Acid resistance N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa)N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. K_(1C) (MPa · m^(0.5))N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 1,0551,088 1,071 1,062 1,038 1,054 1,044 N.A. N.A. N.A. DOL_ZERO_(K) 25 23 2424 27 23 27 N.A. N.A. N.A. (μm) CS_(Na) (MPa) 253 265 260 265 257 297268 N.A. N.A. N.A. DOL_ZERO_(Na) 129 140 131 134 130 129 129 N.A. N.A.N.A. (μm)

TABLE 21 (mol %) No. 201 No. 202 No. 203 No. 204 No. 205 No. 206 No. 207No. 208 No. 209 No. 210 SiO₂ 63.42 60.41 60.3713 60.367 61.96 60.6360.96 60.00 61.74 61.53 Al₂O₃ 15.12 18.8 18.8 18.8 10.52 10.30 10.3510.19 10.48 10.45 B₂O₃ 0.28 0.10 0.10 0.10 0.00 0.00 0.00 0.00 1.37 0.00Li₂O 3.61 7.20 7.20 7.20 10.47 10.25 8.20 10.14 10.43 10.40 Na₂O 11.638.10 8.10 8.10 12.98 11.19 11.25 11.08 12.94 12.89 K₂O 0.91 0.45 0.450.45 1.02 0.00 0.00 0.00 0.00 0.00 MgO 2.66 0.50 0.50 0.50 0.00 4.656.23 6.14 0.00 0.00 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.001.70 SrO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.00 0.00 3.012.94 2.96 2.41 3.00 2.99 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅2.15 4.30 4.30 4.30 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.11 0.04 0.080.08 0.04 0.04 0.04 0.04 0.04 0.04 Fe₂O₃ 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 Cl 0.10 0.10 0.10 0.10 0.00 0.00 0.00 0.00 0.00 0.00 Li/(Na + K)0.29 0.84 0.84 0.84 0.75 0.92 0.73 0.92 0.81 0.81 (Na + K)/Li 3.47 1.191.19 1.19 1.34 1.09 1.37 1.09 1.24 1.24 Li + Na + K 16.16 15.75 15.7515.75 24.47 21.44 19.45 21.22 23.37 23.29 Li/P 1.68 1.67 1.67 1.67 — — —— — — P/Li 0.60 0.60 0.60 0.60 0.00 0.00 0.00 0.00 0.00 0.00 (Na − Li)/0.46 0.04 0.04 0.04 0.24 0.09 0.29 0.09 0.21 0.24 (Al + B + P) (B + Na −P)/ 0.52 0.15 0.15 0.15 0.62 0.54 0.61 0.54 0.68 0.62 (Al + Li) Si +1.2P − 3Al − −5.23 −17.93 −17.97 −17.97 −11.04 −7.54 −3.38 −7.47 −11.36−9.96 2Li − 1.5Na − K − B ρ (g/cm³) 2.430 N.A. 2.403 2.403 2.530 2.5422.547 2.536 2.527 2.546 α_(30-380° C.) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (×10⁻⁷/° C.) Ts (° C.) N.A. N.A. N.A. N.A. 704 730762 721 692 704 10^(2.5) dPa · s N.A. N.A. N.A. N.A. 1,331 1,317 1,3501,308 1,308 1,311 (° C.) TL (° C.) N.A. N.A. N.A. N.A. 858 N.A. N.A.N.A. N.A. 864 logη at TL N.A. N.A. N.A. N.A. 5.50 N.A. N.A. N.A. N.A.5.37 (dPa · s) Acid resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa) N.A. N.A.N.A. N.A. 83 86 86 86 83 84 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. (μm)

TABLE 22 (mol %) No. 211 No. 212 No. 213 No. 214 No. 215 No. 216 No. 217No. 218 No. 219 No. 220 SiO₂ 62.20 62.01 62.15 61.32 61.25 62.66 63.0562.95 62.92 62.65 Al₂O₃ 10.56 11.47 10.55 10.41 10.40 10.64 10.71 10.6910.69 10.64 B₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Li₂O10.51 10.48 8.36 8.25 8.24 8.43 8.48 8.47 8.46 8.43 Na₂O 13.03 12.9913.02 11.83 10.80 12.09 11.11 12.14 12.14 11.88 K₂O 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 MgO 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 CaO 0.00 0.00 2.86 6.20 7.32 2.88 2.90 2.89 2.89 3.11 SrO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.63 0.00 0.000.00 0.00 1.26 1.70 1.27 0.00 1.26 ZrO₂ 3.02 3.01 3.02 1.95 1.95 1.992.00 1.00 2.00 1.99 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.55 0.860.00 ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.04 0.04 0.04 0.040.04 0.04 0.04 0.04 0.04 0.04 Fe₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Li/(Na + K) 0.81 0.810.64 0.70 0.76 0.70 0.76 0.70 0.70 0.71 (Na + K)/Li 1.24 1.24 1.56 1.431.31 1.43 1.31 1.43 1.43 1.41 Li + Na + K 23.55 23.47 21.38 20.08 19.0420.52 19.60 20.61 20.60 20.30 Li/P — — — — — — — — — — P/Li 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 (Na − Li)/ 0.24 0.22 0.44 0.340.25 0.34 0.25 0.34 0.34 0.32 (Al + B + P) (B + Na − P)/ 0.62 0.59 0.690.63 0.58 0.63 0.58 0.63 0.63 0.62 (Al + Li) Si + 1.2P − 3Al − −10.07−12.86 −5.77 −4.16 −2.63 −4.25 −2.71 −4.27 −4.27 −3.94 2Li − 1.5Na − K −B ρ (g/cm³) 2.556 2.529 2.556 2.552 2.560 2.574 2.588 2.577 2.576 2.575α_(30-380° C.) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.(×10⁻⁷/° C.) Ts (° C.) 708 726 729 714 718 713 719 708 743 715 10^(2.5)dPa · s 1,327 1,352 1,380 1,323 1,310 1,352 1,351 1,332 1,356 1,341 (°C.) TL (° C.) 867 N.A. N.A. N.A. N.A. 883.2 N.A. N.A. N.A. N.A. logη atTL 5.41 N.A. N.A. N.A. N.A. 5.32 N.A. N.A. N.A. N.A. (dPa · s) Acidresistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5 wt %80° C. 24 h) Alkali resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa) 83 83 84 N.A. 85 84 84 84 8483 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. CS_(K) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (μm)CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (μm)

TABLE 23 (mol %) No. 221 No. 222 No. 223 No. 224 No. 225 No. 226 No. 227No. 228 No. 229 No. 230 SiO₂ 62.84 62.76 63.11 57.51 57.51 56.93 60.0763.08 61.08 61.08 Al₂O₃ 10.67 10.66 10.72 9.77 9.77 9.67 15.81 13.8115.81 13.81 B₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Li₂O7.80 8.44 7.84 23.61 21.62 23.37 8.34 6.34 6.34 6.34 Na₂O 11.91 11.9011.96 3.44 2.49 1.51 12.10 11.10 11.10 11.10 K₂O 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 MgO 0.00 0.00 0.00 0.00 2.94 2.91 0.000.00 0.00 0.00 CaO 3.46 2.88 2.90 2.64 2.64 2.62 0.00 0.00 0.00 0.00 SrO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 1.27 1.27 1.271.16 1.16 1.15 0.00 0.00 0.00 0.00 ZrO₂ 2.00 1.99 2.01 1.83 1.83 1.810.00 0.00 0.00 0.00 Y₂O₃ 0.00 0.06 0.14 0.00 0.00 0.00 0.00 0.00 0.000.00 ZnO 0.00 0.00 0.00 0.00 0.00 0.00 1.16 1.16 1.16 1.16 P₂O₅ 0.000.00 0.00 0.00 0.00 0.00 2.47 4.47 4.47 6.47 SnO₂ 0.04 0.04 0.04 0.040.04 0.04 0.04 0.04 0.04 0.04 Fe₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 TiO₂ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Cl0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Li/(Na + K) 0.66 0.710.66 6.86 8.70 15.43 0.69 0.57 0.57 0.57 (Na + K)/Li 1.53 1.41 1.53 0.150.11 0.06 1.45 1.75 1.75 1.75 Li + Na + K 19.72 20.34 19.80 27.05 24.1124.88 20.44 17.44 17.44 17.44 Li/P — — — — — — 3.38 1.42 1.42 0.98 P/Li0.00 0.00 0.00 0.00 0.00 0.00 0.30 0.71 0.71 0.02 (Na − Li)/ 0.39 0.320.39 −2.06 −1.96 −2.26 0.21 0.26 0.23 0.23 (Al + B + P) (B + Na − P)/0.64 0.62 0.64 0.10 0.08 0.05 0.40 0.33 0.30 0.23 (Al + Li) Si + 1.2P −3Al − −2.65 −3.95 −2.66 −24.17 −18.77 −21.08 −19.22 −2.32 −10.32 −1.922Li − 1.5Na − K − B ρ (g/cm³) 2.577 2.576 2.579 N.A. N.A. N.A. 2.4512.415 2.425 2.404 α_(30-380° C.) N.A. N.A. N.A. 96.6 91.2 92.2 91.2 82.882.7 82.4 (×10⁻⁷/° C.) Ts (° C.) 722 716 727 N.A. 652 N.A. N.A. N.A. 866846 10^(2.5) dPa · s 1,354 1,344 1,362 N.A. 1,141 N.A. 1,504 1,580 1,5761,572 (° C.) TL (° C.) N.A. N.A. N.A. N.A. 1,033 N.A. 973 930 956 N.A.logη at TL N.A. N.A. N.A. N.A. 3.10 N.A. 5.9 6.4 6.5 N.A. (dPa · s) Acidresistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5 wt %80° C. 24 h) Alkali resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa) 83 83 83 90 91 92 N.A. 73 7370 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A. 0.91 N.A. N.A. N.A. N.A.N.A. CS_(K) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. 1,142 N.A. N.A. N.A.DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A. 24 N.A. N.A. N.A. (μm)CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. 208 N.A. N.A. N.A.DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. 123 N.A. N.A. N.A. (μm)

TABLE 24 (mol %) No. 231 No. 232 No. 233 No. 234 No. 235 No. 236 No. 237No. 238 No. 239 No. 240 SiO₂ 59.07 59.07 64.31 64.66 64.43 74.34 74.2074.87 64.86 64.33 Al₂O₃ 19.81 17.81 14.92 14.94 15.02 4.85 4.99 5.004.96 4.89 B₂O₃ 0.00 2.00 5.03 4.97 5.00 5.38 4.84 5.06 15.24 15.55 Li₂O6.34 8.34 5.00 10.00 10.01 4.98 5.01 13.76 13.71 1.00 Na₂O 11.10 11.105.33 5.30 0.10 10.31 0.26 1.20 0.08 14.08 K₂O 0.00 0.00 5.31 0.02 5.330.03 10.59 0.01 1.05 0.04 MgO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 CaO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 ZrO₂ 0.00 0.00 0.002 0.003 0.002 0.0020.003 0.002 0.002 0.003 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 ZnO 1.16 1.16 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅2.47 0.47 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.04 0.04 0.090.10 0.10 0.10 0.09 0.10 0.10 0.10 Fe₂O₃ 0.00 0.00 0.002 0.002 0.0020.002 0.002 0.001 0.002 0.002 TiO₂ 0.00 0.00 0.003 0.004 0.003 0.0040.004 0.003 0.004 0.004 Cl 0.00 0.00 0.003 0.003 0.003 0.003 0.003 0.0030.003 0.003 Li/(Na + K) 0.57 0.75 0.47 1.88 1.84 0.48 0.46 11.39 12.150.07 (Na + K)/Li 1.75 1.33 2.13 0.53 0.54 2.08 2.17 0.09 0.08 4.09 Li +Na + K 17.44 19.44 15.64 15.32 15.44 15.31 15.87 14.97 14.83 15.12 Li/P2.57 17.73 — — — — — — — — P/Li 0.39 0.06 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 (Na − Li)/ 0.21 0.14 0.02 −0.24 −0.50 0.52 −0.48 −1.25 −0.670.64 (Al + B + P) (B + Na − P)/ 0.33 0.48 0.52 0.41 0.20 1.60 0.51 0.330.82 5.03 (Al + Li) Si + 1.2P − 3Al − −26.72 −29.12 −8.80 −13.11 −11.1328.96 33.38 25.49 6.15 10.95 2Li − 1.5Na − K − B ρ (g/cm³) 2.453 2.4502.386 2.370 2.360 2.410 2.400 2.332 2.326 2.443 α_(30-380° C.) N.A. 86.082.6 68.7 68.9 75.7 77.6 58.8 58.5 80.1 (×10⁻⁷/° C.) Ts (° C.) 913 816823 817 828 685 737 N.A. 640 685 10^(2.5) dPa · s 1,547 1,487 1,6101,516 1,556 1,362 1,448 1,382 1,146 1,149 (° C.) TL (° C.) N.A. 1,055988.8 1,149.55 1,143 855.74 817.8 1,070.7 894.56 647.6 or less or moreor less logη at TL N.A. 5.0 5.94 4.4 4.6 5.4 6.6 3.76 3.9 8.72 (dPa · s)or more or less or more Acid resistance N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa)N.A. 78 71 76 72 79 72 80 79 77 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) 1,453 1,228 N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(K) 18 14 N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (μm) CS_(Na) (MPa) 254 321 N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. DOL_ZERO_(Na) 134 104 N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. (μm)

TABLE 25 (mol %) No. 241 No. 242 No. 243 No. 244 No. 245 No. 246 No. 247No. 248 No. 249 No. 250 SiO₂ 64.23 64.43 64.26 64.41 64.48 74.52 74.2674.87 74.57 65.28 Al₂O₃ 4.93 14.92 14.89 14.82 14.77 4.95 4.94 4.95 4.924.99 B₂O₃ 14.45 5.11 5.26 5.15 5.02 5.20 5.36 4.65 4.93 14.56 Li₂O 1.030.99 1.00 0.99 1.00 5.01 4.99 5.00 4.99 8.99 Na₂O 0.29 9.50 9.46 9.439.64 5.28 5.29 5.28 5.41 1.03 K₂O 14.97 0.00 0.00 0.00 0.01 0.00 0.000.00 0.00 0.00 MgO 0.00 4.90 0.07 0.00 0.00 4.90 0.09 0.00 0.00 4.98 CaO0.00 0.05 4.94 0.02 0.01 0.04 4.96 0.02 0.00 0.05 SrO 0.00 0.00 0.015.01 0.00 0.00 0.01 5.11 0.08 0.00 BaO 0.00 0.00 0.00 0.05 4.98 0.000.00 0.00 4.99 0.00 ZrO₂ 0.002 0.002 0.002 0.003 0.003 0.002 0.002 0.0030.002 0.002 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.09 0.10 0.10 0.11 0.09 0.100.10 0.10 0.10 0.10 Fe₂O₃ 0.002 0.002 0.002 0.002 0.002 0.002 0.0020.002 0.002 0.002 TiO₂ 0.003 0.003 0.003 0.004 0.004 0.003 0.004 0.0040.003 0.004 Cl 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.0030.003 Li/(Na + K) 0.07 0.10 0.11 0.11 0.10 0.95 0.94 0.95 0.92 8.77(Na + K)/Li 14.80 9.58 9.44 9.50 9.61 1.05 1.06 1.06 1.08 0.11 Li + Na +K 16.28 10.49 10.47 10.42 10.65 10.29 10.28 10.28 10.40 10.02 Li/P — — —— — — — — — — P/Li 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 (Na− Li)/ −0.04 0.42 0.42 0.42 0.44 0.03 0.03 0.03 0.04 −0.41 (Al + B + P)(B + Na − P)/ 2.47 0.92 0.93 0.92 0.93 1.05 1.07 1.00 1.04 1.11 (Al +Li) Si + 1.2P − 3Al − 17.53 −1.66 −1.86 −1.33 −1.31 36.54 36.17 37.4336.79 16.21 2Li − 1.5Na − K − B ρ (g/cm³) 2.426 2.403 2.421 2.496 2.5622.352 2.393 2.489 2.572 2.312 α_(30-380° C.) 84.1 59.8 65.4 68.2 70.156.5 60.4 62.3 63.6 49.6 (×10⁻⁷/° C.) Ts (° C.) 730 904 899 897 896 741721 714 708 682 10^(2.5) dPa · s 1,222 1,572 1,583 1,600 1,616 1,5271,451 1,428 1,411 1,279 (° C.) TL (° C.) 1,032.5 1,146.02 1,196.471,288.2 1,282.9 1,035.2 1,059.4 1,038.4 1,018.84 921.5 or more or moreor more logη at TL 3.6 5.0 4.6 4.04 4.16 4.6 4.17 4.2 4.2 4.4 (dPa · s)or less or less or less Acid resistance N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa)69 74 73 72 71 77 79 80 79 76 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. (μm)

TABLE 26 (mol %) No. 251 No. 252 No. 253 No. 254 No. 255 No. 256 No. 257No. 258 No. 259 No. 260 SiO₂ 65.00 64.38 65.27 64.83 64.61 65.04 64.9564.73 64.52 64.61 Al₂O₃ 4.97 4.98 4.96 14.92 14.92 15.01 15.03 14.8114.91 14.89 B₂O₃ 14.75 15.35 15.03 5.09 5.24 4.87 4.89 5.18 5.33 5.23Li₂O 8.99 9.01 8.57 5.00 5.00 14.00 13.99 1.01 1.00 0.99 Na₂O 1.05 1.161.04 10.02 0.11 0.97 0.09 14.13 0.12 0.08 K₂O 0.00 0.00 0.00 0.03 10.010.01 0.94 0.04 14.02 9.12 MgO 0.09 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 4.98 CaO 5.04 0.02 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SrO 0.014.92 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 BaO 0.00 0.06 5.02 0.000.00 0.00 0.00 0.00 0.00 0.00 ZrO₂ 0.002 0.003 0.002 0.002 0.003 0.0030.002 0.002 0.002 0.002 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.10 0.10 0.100.10 0.09 0.10 0.10 0.10 0.09 0.09 Fe₂O₃ 0.002 0.002 0.002 0.002 0.0020.002 0.002 0.002 0.002 0.002 TiO₂ 0.003 0.004 0.003 0.003 0.004 0.0040.003 0.003 0.004 0.003 Cl 0.003 0.003 0.003 0.003 0.003 0.003 0.0030.003 0.003 0.003 Li/(Na + K) 8.57 7.75 8.23 0.50 0.49 14.31 13.51 0.070.07 0.11 (Na + K)/Li 0.12 0.13 0.12 2.01 2.02 0.07 0.07 14.07 14.099.30 Li + Na + K 10.03 10.18 9.61 15.05 15.12 14.98 15.03 15.17 15.1410.19 Li/P — — — — — — — — — — P/Li 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 (Na − Li)/ −0.40 −0.39 −0.38 0.25 −0.24 −0.66 −0.70 0.66−0.04 −0.05 (Al + B + P) (B + Na − P)/ 1.13 1.18 1.19 0.76 0.27 0.200.17 1.22 0.34 0.33 (Al + Li) Si + 1.2P − 3Al − 15.81 14.31 16.67 −10.09−5.57 −14.33 −14.08 −8.13 −1.76 3.48 2Li − 1.5Na − K − B ρ (g/cm³) 2.3552.446 2.527 2.383 2.369 2.353 2.351 2.397 N.A. 2.382 α_(30-380° C.) 52.453.7 54.9 75.7 78.0 60.9 60.5 82.1 N.A. 61.0 (×10⁻⁷/° C.) Ts (° C.) 699697 683 843 880 N.A. N.A. 872 N.A. 966 10^(2.5) dPa · s 1,222 1,2101,194 1,586 1,672 1,478 1,481 1,663 1,788 1,656 (° C.) TL (° C.) 972.78974.8 951.02 1,052.8 1,120.3 1,277.92 1,305.6 746.6 N.A. 1,253 or moreor more or less or more logη at TL 3.7 3.7 3.8 5.42 5.40 3.4 3.3 9.57N.A. 4.68 (dPa · s) or less or less or more or less Acid resistance N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h)Alkali resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.(NaOH 5 wt % 80° C. 6 h) E (GPa) 79 79 79 72 66 77 76 68 N.A. 68 K_(1C)(MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K)(MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(K)N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (μm) CS_(Na) (MPa)N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(Na) N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (μm)

TABLE 27 (mol %) No. 261 No. 262 No. 263 No. 264 No. 265 No. 266 No. 267No. 268 No. 269 No. 270 SiO₂ 64.56 64.63 64.55 64.64 64.56 64.27 64.2364.66 64.55 64.74 Al₂O₃ 14.96 14.88 14.80 14.94 14.93 14.89 14.87 14.9314.97 15.03 B₂O₃ 5.20 5.16 5.34 5.00 5.07 5.35 5.34 5.13 5.21 5.08 Li₂O1.00 1.01 0.99 5.01 5.01 5.01 5.00 5.01 5.02 5.01 Na₂O 0.09 0.13 0.125.29 5.28 5.31 5.45 0.06 0.08 0.12 K₂O 9.09 9.08 9.15 0.01 0.01 0.010.01 5.12 5.11 4.95 MgO 0.05 0.00 0.00 4.96 0.05 0.00 0.00 4.98 0.050.00 CaO 4.93 0.00 0.00 0.05 5.00 0.02 0.00 0.00 4.91 0.00 SrO 0.00 4.950.00 0.00 0.00 4.98 0.00 0.00 0.00 4.92 BaO 0.00 0.05 4.94 0.00 0.000.05 4.99 0.00 0.00 0.05 ZrO₂ 0.003 0.002 0.003 0.003 0.002 0.002 0.0020.002 0.003 0.002 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.09 0.10 0.09 0.09 0.100.09 0.10 0.10 0.10 0.09 Fe₂O₃ 0.002 0.002 0.002 0.002 0.002 0.002 0.0020.002 0.002 0.002 TiO₂ 0.004 0.004 0.005 0.004 0.003 0.003 0.004 0.0030.004 0.003 Cl 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.0030.003 Li/(Na + K) 0.11 0.11 0.11 0.95 0.95 0.94 0.92 0.97 0.97 0.99(Na + K)/Li 9.16 9.11 9.32 1.06 1.06 1.06 1.09 1.04 1.03 1.01 Li + Na +K 10.19 10.22 10.27 10.31 10.30 10.33 10.46 10.19 10.20 10.08 Li/P — — —— — — — — — — P/Li 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 (Na− Li)/ −0.05 −0.04 −0.04 0.01 0.01 0.01 0.02 −0.25 −0.24 −0.24 (Al + B +P) (B + Na − P)/ 0.33 0.33 0.35 0.52 0.52 0.54 0.54 0.26 0.26 0.26 (Al +Li) Si + 1.2P − 3Al − 3.25 3.52 3.51 −3.13 −3.22 −3.74 −3.90 −0.50 −0.82−0.59 2Li − 1.5Na − K − B ρ (g/cm³) 2.394 2.471 2.533 2.396 2.413 2.4872.552 2.384 2.400 2.472 α_(30-380° C.) 66.6 69.2 71.3 54.2 59.4 61.763.6 54.4 59.5 61.2 (×10⁻⁷/° C.) Ts (° C.) 961 966 N.A. 870 864 861 861888 884 888 10^(2.5) dPa · s 1,685 1,705 1,725 1,523 1,530 1,553 1,5611,562 1,571 1,585 (° C.) TL (° C.) 1,169.38 1,231.2 1,228.1 1,147.041,166.49 1,226.86 1,178.64 1,163.92 1,179.1 1,231.2 or more or more orless or more logη at TL 5.4 5.07 5.29 4.6 4.4 4.1 4.5 4.7 4.58 4.33 (dPa· s) or less or less or more or less Acid resistance N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistanceN.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6h) E (GPa) 67 66 65 78 77 76 74 74 73 72 K_(1C) (MPa · m^(0.5)) N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (μm)

TABLE 28 (mol %) No. 271 No. 272 No. 273 No. 274 No. 275 No. 276 No. 277No. 278 No. 279 No. 280 SiO₂ 64.68 64.70 64.71 65.64 64.86 64.69 64.7264.87 64.54 64.46 Al₂O₃ 14.91 15.09 15.08 14.82 14.92 15.04 15.03 14.9914.94 15.02 B₂O₃ 5.25 5.09 5.06 4.57 5.14 5.12 5.09 4.89 5.27 5.26 Li₂O4.99 9.01 9.00 8.99 8.99 9.01 9.01 9.00 8.99 5.01 Na₂O 0.10 0.96 0.970.94 1.00 0.06 0.07 0.11 0.09 0.05 K₂O 4.99 0.00 0.00 0.00 0.00 0.970.97 0.96 0.98 0.00 MgO 0.00 5.00 0.05 0.00 0.00 4.99 0.00 0.00 0.007.01 CaO 0.00 0.05 5.03 0.02 0.00 0.03 5.02 0.01 0.00 1.04 SrO 0.00 0.000.00 4.87 0.00 0.00 0.00 5.01 0.00 1.02 BaO 4.96 0.00 0.00 0.06 4.980.00 0.00 0.06 5.06 1.02 ZrO₂ 0.003 0.003 0.000 0.002 0.001 0.001 0.0020.004 0.006 0.004 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.10 0.10 0.10 0.09 0.100.10 0.09 0.09 0.10 0.10 Fe₂O₃ 0.002 0.002 0.000 0.001 0.001 0.000 0.0020.003 0.004 0.003 TiO₂ 0.004 0.004 0.000 0.002 0.002 0.001 0.003 0.0060.009 0.007 Cl 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.0030.003 Li/(Na + K) 0.98 9.38 9.27 9.55 8.99 8.71 8.63 8.46 8.43 ∞ (Na +K)/Li 1.02 0.11 0.11 0.10 0.11 0.11 0.12 0.12 0.12 0.01 Li + Na + K10.09 9.97 9.98 9.93 9.99 10.04 10.05 10.07 10.06 5.07 Li/P — — — — — —— — — — P/Li 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 (Na −Li)/ −0.24 −0.40 −0.40 −0.41 −0.40 −0.44 −0.44 −0.45 −0.44 −0.24 (Al +B + P) (B + Na − P)/ 0.27 0.25 0.25 0.23 0.26 0.22 0.21 0.21 0.22 0.27(Al + Li) Si + 1.2P − 3Al − −0.44 −5.12 −5.05 −2.78 −4.53 −4.62 −4.55−4.12 −4.66 4.04 2Li − 1.5Na − K − B ρ (g/cm³) 2.534 2.386 2.403 2.4772.542 2.383 2.400 2.474 2.539 2.471 α_(30-380° C.) 62.7 48.6 52.5 55.156.8 48.6 53.5 55.3 55.2 39.6 (×10⁻⁷/° C.) Ts (° C.) 904 860 849 847 850865 848 845 N.A. 897 10^(2.5) dPa · s 1,605 1,466 1,477 1,490 1,5031,477 1,484 1,500 1,509 1,485 (° C.) TL (° C.) 1,228.1 1,192.11 1,191.161,195.44 1,189.28 1,216.08 1,189.28 1,201.32 1,181.12 1,264.8 or morelogη at TL 4.49 4.0 4.0 4.0 4.1 3.9 4.1 4.0 4.2 3.7 (dPa · s) or lessAcid resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5wt % 80° C. 24 h) Alkali resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa) 70 81 79 78 76 80 78 7776 83 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (μm)CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (μm)

TABLE 29 (mol %) No. 281 No. 282 No. 283 No. 284 No. 285 No. 286 No. 287No. 288 No. 289 No. 290 SiO₂ 64.56 64.70 64.40 64.53 64.60 64.46 64.5364.36 64.57 75.33 Al₂O₃ 14.96 14.93 14.94 15.07 15.05 14.99 15.01 14.9514.88 5.04 B₂O₃ 5.24 5.17 5.39 5.17 5.08 5.27 5.13 5.32 5.29 4.88 Li₂O4.99 5.00 5.00 5.01 5.00 5.00 5.01 5.01 5.01 4.99 Na₂O 0.06 0.11 0.090.05 0.09 0.07 0.10 0.08 0.12 5.02 K₂O 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 4.62 MgO 1.02 0.98 1.00 5.01 4.98 4.98 0.05 0.05 0.000.00 CaO 7.04 1.01 1.04 5.03 0.06 0.05 5.01 5.09 0.03 0.00 SrO 1.02 6.941.01 0.01 5.00 0.01 5.00 0.01 4.96 0.00 BaO 1.00 1.06 7.02 0.00 0.055.01 0.06 5.02 5.04 0.00 ZrO₂ 0.002 0.002 0.002 0.002 0.002 0.019 0.0020.002 0.002 0.007 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.10 0.10 0.10 0.09 0.100.10 0.09 0.10 0.10 0.10 Fe₂O₃ 0.001 0.001 0.001 0.001 0.002 0.015 0.0020.002 0.001 0.005 TiO₂ 0.002 0.003 0.003 0.002 0.003 0.029 0.003 0.0040.003 0.010 Cl 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.0030.003 Li/(Na + K) ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ ∞ 0.52 (Na + K)/Li 0.01 0.02 0.02 0.010.02 0.02 0.02 0.02 0.02 1.93 Li + Na + K 5.06 5.11 5.09 5.07 5.09 5.075.11 5.09 5.12 14.63 Li/P — — — — — — — — — — P/Li 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 (Na − Li)/ −0.24 −0.24 −0.24 −0.25 −0.24−0.24 −0.24 −0.24 −0.24 0.00 (Al + B + P) (B + Na − P)/ 0.27 0.26 0.280.26 0.26 0.27 0.26 0.27 0.27 0.99 (Al + Li) Si + 1.2P − 3Al − 4.36 4.584.04 4.03 4.26 4.12 4.19 4.04 4.45 33.18 2Li − 1.5Na − K − B ρ (g/cm³)2.486 2.573 2.650 2.434 2.508 2.573 2.521 2.586 2.655 2.401α_(30-380° C.) 44.4 46.6 47.4 40.1 42.0 42.8 45.9 47.1 49.2 76.1(×10⁻⁷/° C.) Ts (° C.) 902 904 905 897 898 904 903 904 907 700 10^(2.5)dPa · s 1,495 1,518 1,527 1,478 1,494 1,503 1,507 1,517 1,528 1,417 (°C.) TL (° C.) 1,171.83 1,198.38 1,216.68 1,233.84 1,202.88 1,193.921,234.92 1,123.7 1,253.92 934.9 or less logη at TL 4.4 4.3 4.3 3.9 4.24.3 4.0 4.9 4.0 4.8 (dPa · s) Acid resistance N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E(GPa) 81 79 77 83 82 80 80 78 77 76 K_(1C) (MPa · m^(0.5)) N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. (μm)

TABLE 30 (mol %) No. 291 No. 292 No. 293 No. 294 No. 295 No. 296 No. 297No. 298 No. 299 No. 300 SiO₂ 75.03 75.18 75.04 74.67 75.24 74.75 74.7174.97 74.50 71.50 Al₂O₃ 5.01 5.04 5.02 4.98 5.07 4.96 4.97 4.98 4.944.75 B₂O₃ 4.90 4.94 4.82 5.32 5.11 5.13 5.20 5.12 5.32 4.87 Li₂O 10.009.98 14.01 1.01 0.99 0.99 1.00 1.00 0.99 0.95 Na₂O 4.88 0.05 0.05 13.870.11 9.06 8.94 8.74 9.10 13.03 K₂O 0.03 4.71 0.92 0.05 13.39 0.01 0.010.00 0.00 0.00 MgO 0.00 0.00 0.00 0.00 0.00 4.95 0.06 0.00 0.00 4.76 CaO0.00 0.00 0.00 0.00 0.00 0.05 5.01 0.02 0.00 0.04 SrO 0.00 0.00 0.000.00 0.00 0.00 0.00 5.01 0.00 0.00 BaO 0.00 0.00 0.00 0.00 0.00 0.000.00 0.05 5.05 0.00 ZrO₂ 0.016 0.001 0.011 0.002 0.002 0.002 0.002 0.0020.002 0.002 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.10 0.10 0.10 0.10 0.09 0.090.10 0.09 0.10 0.09 Fe₂O₃ 0.012 0.001 0.009 0.002 0.002 0.002 0.0020.002 0.002 0.002 TiO₂ 0.025 0.002 0.018 0.003 0.003 0.003 0.003 0.0030.003 0.003 Cl 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.0030.003 Li/(Na + K) 2.04 2.10 14.41 0.07 0.07 0.11 0.11 0.11 0.11 0.07(Na + K)/Li 0.49 0.48 0.07 13.81 13.66 9.16 8.92 8.76 9.18 13.73 Li +Na + K 14.91 14.74 14.98 14.93 14.48 10.05 9.95 9.74 10.09 13.98 Li/P —— — — — — — — — — P/Li 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00(Na − Li)/ −0.52 −1.00 −1.42 1.25 −0.09 0.80 0.78 0.77 0.79 1.26 (Al +B + P) (B + Na − P)/ 0.65 0.33 0.26 3.20 0.86 2.39 2.37 2.32 2.43 3.14(Al + Li) Si + 1.2P − 3Al − 27.75 30.37 26.16 31.54 39.39 39.18 39.1839.81 38.73 30.94 2Li − 1.5Na − K − B ρ (g/cm³) 2.368 2.349 2.334 2.431N.A. 2.374 2.418 2.509 2.592 2.429 α_(30-380° C.) 66.2 66.0 58.4 76.1N.A. 61.6 65.2 66.7 67.4 78.3 (×10⁻⁷/° C.) Ts (° C.) 670 693 N.A. 722N.A. 782 760 757 744 730 10^(2.5) dPa · s 1,372 1,416 1,384 1,408 1,5221,498 1,576 1,480 1,453 1,414 (° C.) TL (° C.) 954 908.6 1,017.8 734.7N.A. 926.94 991.63 988.66 935.1 921 or less or less or less or less logηat TL 4.4 5.00 4.10 7.36 N.A. 5.6 5.2 4.8 5.1 5.1 (dPa · s) or more ormore or more Acid resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa) 80 75 7975 N.A. 73 76 77 76 74 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.(μm)

TABLE 31 (mol %) No. 301 No. 302 No. 303 No. 304 No. 305 No. 306 No. 307No. 308 No. 309 No. 310 SiO₂ 71.53 75.17 74.72 74.75 74.98 75.33 75.0774.83 74.96 75.01 Al₂O₃ 4.74 5.02 4.95 4.99 4.98 5.04 4.97 5.01 5.015.01 B₂O₃ 4.84 5.05 5.24 5.07 5.04 4.86 4.95 5.01 4.90 4.92 Li₂O 0.961.00 1.01 5.00 4.99 4.98 4.99 9.00 8.99 9.00 Na₂O 12.98 0.10 0.08 0.040.04 0.08 0.08 0.97 0.96 0.92 K₂O 0.00 8.54 8.86 4.95 4.84 4.57 4.820.01 0.01 0.00 MgO 0.06 0.00 0.00 5.01 0.06 0.00 0.00 5.01 0.06 0.00 CaO4.79 0.00 0.00 0.04 4.95 0.00 0.00 0.05 5.02 0.02 SrO 0.00 4.97 0.000.00 0.00 4.96 0.00 0.00 0.00 4.96 BaO 0.00 0.05 5.03 0.00 0.00 0.064.98 0.00 0.00 0.06 ZrO₂ 0.002 0.002 0.002 0.017 0.002 0.007 0.018 0.0020.002 0.002 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.09 0.09 0.09 0.09 0.10 0.090.09 0.10 0.09 0.10 Fe₂O₃ 0.002 0.002 0.002 0.013 0.002 0.006 0.0140.001 0.001 0.002 TiO₂ 0.003 0.003 0.004 0.026 0.003 0.011 0.028 0.0030.003 0.003 Cl 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.0030.003 Li/(Na + K) 0.07 0.12 0.11 1.00 1.02 1.07 1.02 9.14 9.28 9.74(Na + K)/Li 13.52 8.68 8.86 1.00 0.98 0.93 0.98 0.11 0.11 0.10 Li + Na +K 13.94 9.64 9.95 9.98 9.88 9.64 9.89 9.98 9.96 9.92 Li/P — — — — — — —— — — P/Li 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 (Na − Li)/1.26 −0.09 −0.09 −0.49 −0.49 −0.50 −0.50 −0.80 −0.81 −0.81 (Al + B + P)(B + Na − P)/ 3.13 0.86 0.89 0.51 0.51 0.49 0.50 0.43 0.42 0.42 (Al +Li) Si + 1.2P − 3Al − 31.09 44.38 43.62 39.69 40.10 40.69 40.30 35.3235.61 35.68 2Li − 1.5Na − K − B ρ (g/cm³) 2.467 2.476 2.570 2.344 2.3762.461 2.549 2.332 2.368 2.458 α_(30-380° C.) 80.4 68.6 70.4 56.0 59.960.7 62.2 48.4 52.5 53.7 (×10⁻⁷/° C.) Ts (° C.) 718 822 810 776 759 755743 N.A. N.A. 716 10^(2.5) dPa · s 1,350 1,586 1,557 1,592 1,535 1,5191,499 1,518 1,449 1,443 (° C.) TL (° C.) 846.69 1,017.59 934.5 1,023.261,014.27 941.86 889.37 1,174 1,170.44 1,180 logη at TL 5.6 5.3 6.0 5.14.9 5.4 5.8 3.9 3.6 3.5 (dPa · s) Acid resistance N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistanceN.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6h) E (GPa) 77 71 71 73 74 74 75 79 80 80 K_(1C) (MPa · m^(0.5)) N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (μm)

TABLE 32 (mol %) No. 311 No. 312 No. 313 No. 314 No. 315 No. 316 No. 317No. 318 No. 319 No. 320 SiO₂ 74.98 74.87 74.79 74.87 74.87 74.86 74.6574.97 74.71 74.85 Al₂O₃ 4.96 4.99 5.00 5.00 4.94 4.99 4.97 4.97 4.914.99 B₂O₃ 4.93 5.03 5.10 5.03 5.04 4.92 5.18 4.86 5.17 5.00 Li₂O 9.019.00 9.00 9.00 9.01 5.00 4.99 5.00 5.00 5.00 Na₂O 0.99 0.03 0.04 0.070.05 0.03 0.03 0.07 0.05 0.01 K₂O 0.00 0.94 0.90 0.88 0.92 0.00 0.000.00 0.00 0.00 MgO 0.00 4.99 0.06 0.00 0.00 7.00 1.03 1.00 1.01 5.01 CaO0.00 0.04 5.01 0.00 0.00 1.05 7.02 1.02 1.04 5.03 SrO 0.00 0.00 0.004.99 0.01 1.03 1.03 6.96 1.00 0.01 BaO 5.02 0.00 0.00 0.06 5.05 1.021.00 1.05 7.00 0.00 ZrO₂ 0.002 0.005 0.005 0.000 0.006 0.007 0.000 0.0010.002 0.001 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 ZnO0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.00 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.10 0.09 0.10 0.10 0.10 0.100.09 0.09 0.10 0.10 Fe₂O₃ 0.002 0.003 0.002 0.003 0.004 0.001 0.0050.001 0.003 0.005 TiO₂ 0.003 0.001 0.000 0.002 0.002 0.004 0.004 0.0040.001 0.000 Cl 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.0020.002 Li/(Na + K) 9.08 9.30 9.58 9.44 9.28 ∞ ∞ ∞ ∞ ∞ (Na + K)/Li 0.110.11 0.10 0.11 0.11 0.01 0.01 0.01 0.01 0.00 Li + Na + K 10.00 9.97 9.949.96 9.98 5.03 5.02 5.08 5.06 5.01 Li/P — — — — — — — — — — P/Li 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 (Na − Li)/ −0.81 −0.89−0.89 −0.89 −0.90 −0.50 −0.49 −0.50 −0.49 −0.50 (Al + B + P) (B + Na −P)/ 0.42 0.36 0.37 0.36 0.37 0.50 0.52 0.49 0.53 0.50 (Al + Li) Si +1.2P − 3Al − 35.66 35.88 35.72 35.85 35.99 44.93 44.55 45.10 44.73 44.862Li − 1.5Na − K − B ρ (g/cm³) 2.540 2.331 2.365 2.456 2.536 2.395 2.4352.541 2.634 2.359 α_(30-380° C.) 55.9 49.0 52.5 54.1 55.5 40.0 44.2 46.147.8 40.7 (×10⁻⁷/° C.) Ts (° C.) 704 N.A. N.A. 716 709 838 840 810 773N.A. 10^(2.5) dPa · s 1,419 1,505 1,445 1,448 1,417 1,596 1,528 1,5281,517 1,573 (° C.) TL (° C.) 1,161.88 1,141.3 1,156.04 1,126.6 1,124.321,251.8 1,252.2 1,137.7 1,135.3 1,246.24 or more or more or more or morelogη at TL 3.5 4.0 3.7 3.8 3.7 3.96 3.63 4.22 4.14 3.9 (dPa · s) or lessor less or less or less Acid resistance N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistance N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa)80 78 80 80 79 78 79 79 78 78 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. (μm)

TABLE 33 (mol %) No. 321 No. 322 No. 323 No. 324 No. 325 No. 326 No. 327No. 328 No. 329 No. 330 SiO₂ 74.84 74.91 74.71 74.67 74.77 64.82 65.0364.62 64.70 64.77 Al₂O₃ 4.98 4.94 4.95 4.92 4.91 5.01 4.96 4.88 4.955.03 B₂O₃ 4.93 4.94 5.09 5.10 5.18 15.34 14.93 15.58 15.33 15.43 Li₂O5.00 5.00 4.99 4.99 4.99 4.99 10.01 9.99 4.99 5.00 Na₂O 0.05 0.04 0.060.04 0.08 5.00 4.96 0.09 9.92 0.07 K₂O 0.00 0.00 0.00 0.00 0.00 4.740.01 4.73 0.00 9.60 MgO 4.97 4.96 0.06 0.07 0.00 0.00 0.00 0.00 0.000.00 CaO 0.06 0.05 5.01 5.08 0.02 0.00 0.00 0.00 0.00 0.00 SrO 5.02 0.014.97 0.02 4.92 0.00 0.00 0.00 0.00 0.00 BaO 0.05 5.04 0.05 5.01 5.020.00 0.00 0.00 0.00 0.00 ZrO₂ 0.001 0.000 0.000 0.001 0.002 0.003 0.0010.005 0.004 0.003 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅ 0.00 0.000.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.10 0.10 0.10 0.10 0.100.10 0.10 0.10 0.10 0.10 Fe₂O₃ 0.000 0.000 0.001 0.001 0.003 0.002 0.0020.000 0.000 0.000 TiO₂ 0.002 0.002 0.000 0.000 0.000 0.001 0.000 0.0020.002 0.000 Cl 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.001 0.0010.001 Li/(Na + K) ∞ ∞ ∞ ∞ ∞ 0.51 2.01 2.07 0.50 0.52 (Na + K)/Li 0.010.01 0.01 0.01 0.02 1.95 0.50 0.48 0.99 1.93 Li + Na + K 5.05 5.04 5.065.03 5.07 14.73 14.98 14.81 14.91 14.67 Li/P — — — — — — — — — — P/Li0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 (Na − Li)/ −0.50 −0.50−0.49 −0.49 −0.49 0.00 −0.25 −0.48 0.24 −0.24 (Al + B + P) (B + Na − P)/0.50 0.50 0.52 0.52 0.53 2.04 1.33 1.05 2.54 1.55 (Al + Li) Si + 1.2P −3Al − 44.90 45.07 44.68 44.76 44.75 12.24 7.76 9.54 9.66 14.53 2Li −1.5Na − K − B ρ (g/cm³) 2.445 2.521 2.479 2.557 2.645 2.389 2.366 2.3842.403 2.379 α_(30-380° C.) 42.2 43.3 45.5 46.7 48.6 75.0 66.6 77.5 73.574.1 (×10⁻⁷/° C.) Ts (° C.) 820 805 N.A. 791 777 651 633 612 648 66910^(2.5) dPa · s 1,572 1,563 1,534 1,516 1,504 1,181 1,141 1,041 1,1451,228 (° C.) TL (° C.) 1,240.65 1,206.92 1,261.08 1,251.8 1,252.2 773.95847.16 764.56 811.55 803.12 or more or more logη at TL 3.9 4.0 3.5 3.513.43 5.4 4.2 4.6 4.8 5.3 (dPa · s) or less or less Acid resistance N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h)Alkali resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.(NaOH 5 wt % 80° C. 6 h) E (GPa) 78 77 80 79 79 76 80 80 79 71 K_(1C)(MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K)(MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(K)N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (μm) CS_(Na) (MPa)N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(Na) N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (μm)

TABLE 34 (mol %) No. 331 No. 332 No. 333 No. 334 No. 335 No. 336 No. 337No. 338 No. 339 No. 340 SiO₂ 65.32 65.08 64.61 64.62 65.15 64.85 65.0364.69 65.16 64.85 Al₂O₃ 4.98 4.95 4.93 4.94 4.96 4.98 4.99 4.97 4.964.96 B₂O₃ 14.61 14.83 15.28 15.31 14.69 15.05 14.94 15.46 14.90 15.05Li₂O 13.99 1.01 1.00 0.99 1.00 1.01 1.00 1.01 1.00 5.00 Na₂O 1.01 9.069.02 8.97 9.03 0.04 0.05 0.10 0.10 5.01 K₂O 0.00 0.00 0.00 0.01 0.038.97 8.93 8.66 8.75 0.00 MgO 0.00 4.92 0.06 0.00 0.00 4.99 0.07 0.000.02 4.96 CaO 0.00 0.04 4.99 0.02 0.00 0.00 4.90 0.00 0.00 0.05 SrO 0.000.00 0.00 4.97 0.00 0.00 0.00 4.95 0.00 0.00 BaO 0.00 0.00 0.00 0.065.03 0.00 0.00 0.06 5.01 0.00 ZrO₂ 0.002 0.000 0.001 0.002 0.003 0.0030.003 0.000 0.001 0.002 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.10 0.10 0.100.10 0.10 0.10 0.10 0.10 0.10 0.10 Fe₂O₃ 0.000 0.001 0.001 0.003 0.0020.002 0.000 0.000 0.002 0.001 TiO₂ 0.001 0.005 0.002 0.005 0.001 0.0060.002 0.005 0.001 0.000 Cl 0.001 0.001 0.001 0.001 0.001 0.001 0.0010.001 0.001 0.001 Li/(Na + K) 13.89 0.11 0.11 0.11 0.11 0.11 0.11 0.120.11 1.00 (Na + K)/Li 0.07 9.01 9.06 9.06 9.02 8.94 9.01 8.68 8.86 1.00Li + Na + K 15.00 10.06 10.02 9.97 10.07 10.02 9.98 9.77 9.85 10.02 Li/P— — — — — — — — — — P/Li 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 (Na − Li)/ −0.66 0.41 0.40 0.39 0.41 −0.05 −0.05 −0.04 −0.05 0.00(Al + B + P) (B + Na − P)/ 0.82 4.01 4.10 4.09 3.98 2.52 2.50 2.60 2.522.01 (Al + Li) Si + 1.2P − 3Al − 6.29 19.80 19.00 19.02 20.00 23.8024.12 23.49 24.47 17.39 2Li − 1.5Na − K − B ρ (g/cm³) 2.332 2.352 2.4062.504 2.588 2.334 2.381 2.474 2.553 2.336 α_(30-380° C.) 59.5 62.3 64.766.1 67.4 65.4 68.0 69.2 69.3 56.3 (×10⁻⁷/° C.) Ts (° C.) 639 697 706707 704 724 746 739 736 672 10^(2.5) dPa · s 1,147 1,310 1,246 1,2231,215 1,407 1,334 1,310 1,285 1,289 (° C.) TL (° C.) 937.6 938.7 866.78857.5 837.35 955.02 925.8 838.48 841.75 931.5 or more or more logη at TL3.53 4.39 5.2 5.0 5.3 4.9 5.0 5.9 5.8 4.3 (dPa · s) or less or less Acidresistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5 wt %80° C. 24 h) Alkali resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa) 80 70 75 77 77 63 67 69 70 74K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.CS_(K) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (μm)CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (μm)

TABLE 35 (mol %) No. 341 No. 342 No. 343 No. 344 No. 345 No. 346 No. 347No. 348 No. 349 No. 350 SiO₂ 64.95 64.86 65.04 64.98 64.94 65.09 65.6065.02 64.78 65.01 Al₂O₃ 4.95 4.96 4.95 4.98 4.96 5.00 4.99 4.98 4.965.02 B₂O₃ 14.88 14.92 14.80 14.99 15.09 14.90 14.55 14.90 15.10 14.87Li₂O 5.00 5.01 4.99 4.99 5.01 5.00 4.99 9.00 9.00 8.99 Na₂O 5.01 4.975.07 0.03 0.04 0.09 0.07 0.02 0.03 0.07 K₂O 0.01 0.01 0.01 4.94 4.884.71 4.58 0.96 0.96 0.86 MgO 0.06 0.00 0.00 4.96 0.06 0.00 0.02 4.970.06 0.00 CaO 5.02 0.02 0.00 0.03 4.93 0.00 0.00 0.04 5.00 0.01 SrO 0.005.09 0.00 0.00 0.00 5.06 0.00 0.00 0.00 5.00 BaO 0.00 0.05 5.02 0.000.00 0.06 5.09 0.00 0.00 0.06 ZrO₂ 0.003 0.002 0.002 0.001 0.000 0.0020.000 0.000 0.002 0.002 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.10 0.10 0.100.10 0.10 0.10 0.10 0.10 0.10 0.10 Fe₂O₃ 0.000 0.000 0.002 0.002 0.0020.002 0.004 0.008 0.003 0.002 TiO₂ 0.002 0.002 0.003 0.001 0.001 0.0010.006 0.002 0.005 0.001 Cl 0.001 0.003 0.005 0.005 0.005 0.005 0.0050.005 0.005 0.005 Li/(Na + K) 1.00 1.01 0.98 1.00 1.02 1.04 1.08 9.199.09 9.69 (Na + K)/Li 1.00 0.99 1.02 1.00 0.98 0.96 0.93 0.11 0.11 0.10Li + Na + K 10.02 9.98 10.08 9.96 9.93 9.80 9.64 9.98 9.99 9.92 Li/P — —— — — — — — — — P/Li 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00(Na − Li)/ 0.00 0.00 0.00 −0.25 −0.25 −0.25 −0.25 −0.45 −0.45 −0.45(Al + B + P) (B + Na − P)/ 2.00 1.99 2.00 1.51 1.52 1.50 1.46 1.07 1.081.07 (Al + Li) Si + 1.2P − 3Al − 17.68 17.58 17.77 20.10 20.01 20.3721.41 16.20 15.81 16.15 2Li − 1.5Na − K − B ρ (g/cm³) 2.377 2.475 2.5592.322 2.360 2.448 2.532 2.311 2.351 2.442 α_(30-380° C.) 59.2 60.7 62.257.4 60.0 62.1 62.1 50.2 52.9 54.0 (×10⁻⁷/° C.) Ts (° C.) 683 679 677689 N.A. 709 689 679 690 590 10^(2.5) dPa · s 1,221 1,219 1,206 1,3571,278 1,254 1,241 1,265 1,221 1,216 (° C.) TL (° C.) 912.44 908.9 903.35962.62 840.39 787.42 799.61 913 945.82 955.02 logη at TL 4.2 4.3 4.3 4.35.5 6.1 5.7 4.4 3.9 3.9 (dPa · s) Acid resistance N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24 h) Alkali resistanceN.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (NaOH 5 wt % 80° C. 6h) E (GPa) 77 79 79 69 72 74 75 76 79 80 K_(1C) (MPa · m^(0.5)) N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. N.A. DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. N.A. (μm)

TABLE 36 (mol %) No. 351 No. 352 No. 353 No. 354 No. 355 No. 35 6 No.357 No. 358 No. 359 No. 360 No. 361 SiO₂ 65.27 64.78 64.37 64.67 64.5465.00 65.50 65.32 64.83 64.93 64.39 Al₂O₃ 4.99 5.00 4.97 4.96 4.95 5.004.99 4.97 4.97 4.94 4.92 B₂O₃ 14.68 15.10 15.50 15.16 15.34 14.81 14.2014.57 14.84 14.82 15.65 Li₂O 9.00 4.99 5.00 5.01 5.00 5.00 5.01 5.005.00 4.99 4.99 Na₂O 0.05 0.02 0.03 0.07 0.06 0.02 0.05 0.03 0.06 0.040.08 K₂O 0.85 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 MgO 0.026.93 1.02 1.00 1.01 4.98 4.94 4.92 0.06 0.07 0.00 CaO 0.00 1.04 7.001.01 1.04 5.05 0.06 0.05 5.02 5.08 0.04 SrO 0.01 1.03 1.01 6.94 1.000.01 5.10 0.01 5.04 0.01 4.87 BaO 5.03 1.01 1.00 1.05 6.96 0.00 0.055.03 0.05 4.99 4.95 ZrO₂ 0.002 0.003 0.002 0.003 0.002 0.004 0.004 0.0000.002 0.003 0.000 Y₂O₃ 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 ZnO 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 P₂O₅0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 SnO₂ 0.10 0.100.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 Fe₂O₃ 0.002 0.004 0.0020.002 0.001 0.003 0.003 0.000 0.002 0.005 0.003 TiO₂ 0.003 0.000 0.0000.004 0.003 0.005 0.001 0.004 0.009 0.007 0.009 Cl 0.005 0.005 0.0070.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 Li/(Na + K) 10.00 — — —— — — — — — — (Na + K)/Li 0.10 0.00 0.01 0.01 0.01 0.00 0.01 0.01 0.010.01 0.02 Li + Na + K 9.90 5.01 5.04 5.09 5.06 5.02 5.06 5.04 5.07 5.035.06 Li/P — — — — — — — — — — — P/Li 0.00 0.00 0.00 0.00 0.00 0.00 0.000.00 0.00 0.00 0.00 (Na − Li)/ −0.45 −0.25 −0.24 −0.25 −0.24 −0.25 −0.26−0.25 −0.25 −0.25 −0.24 (Al + B + P) (B + Na − P)/ 1.05 1.51 1.56 1.531.55 1.48 1.43 1.46 1.49 1.50 1.59 (Al + Li) Si + 1.2P − 3Al − 16.6924.68 23.91 24.48 24.28 25.14 26.25 25.80 24.97 25.23 23.88 2Li − 1.5Na− K − B ρ (g/cm³) 2.523 2.367 N.A. N.A. 2.610 N.A. 2.420 2.493 N.A.2.539 2.628 α_(30-380° C.) 55.5 42.1 (45) (47) 48.7 (41) 43.8 45.0 (45)48.0 50.0 (×10⁻⁷/° C.) Ts (° C.) 674 827 N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. 10^(2.5) dPa · s 1,209 1,371 N.A. N.A. 1,285 N.A. 1,3441,340 N.A. 1,294 1,276 (° C.) TL (° C.) 948.55 1,011.8 N.A. N.A.1,019.38 N.A. 1,015.22 996.06 N.A. 1,026.37 1,031.86 logη at TL 3.9 4.6N.A. N.A. 3.9 N.A. 4.2 4.3 N.A. 3.9 3.7 (dPa · s) Acid resistance N.A.N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. (HCl 5 wt % 80° C. 24h) Alkali resistance N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. (NaOH 5 wt % 80° C. 6 h) E (GPa) 79 74 N.A. N.A. 77 N.A. 75 74 N.A.78 79 K_(1C) (MPa · m^(0.5)) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. N.A. CS_(K) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. DOL_ZERO_(K) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. (μm) CS_(Na) (MPa) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. DOL_ZERO_(Na) N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A. N.A.N.A. N.A. (μm)

Samples in the tables were each produced as described below. First,glass raw materials were blended so as to give a glass composition shownin the table, and were melted at 1,600° C. for 21 hours with a platinumpot. Subsequently, the resultant molten glass was poured out on a carbonsheet and formed into a flat sheet shape, followed by being cooled in atemperature region of from an annealing point to a strain point at arate of 3° C./min. Thus, a glass substrate (glass substrate to betempered) was obtained. The surface of the resultant glass substrate wasoptically polished so as to give a sheet thickness of 1.5 mm, and thenthe glass substrate was evaluated for various characteristics.

The density (p) is a value measured by a well-known Archimedes method.

The thermal expansion coefficient (α_(30-380° C.)) at 30° C. to 380° C.is a value measured for an average thermal expansion coefficient with adilatometer.

The temperature (10^(2.5) dPa·s) at a viscosity at high temperature of10^(2.5) dPa·s is a value measured by a platinum sphere pull up method.

The softening point (Ts) is a value measured based on a method of ASTMC338.

The liquidus temperature (TL) was determined as a temperature obtainedas described below. Glass powder which had passed through a standard30-mesh sieve (500 μm) and remained on a 50-mesh sieve (300 μm) wasloaded into a platinum boat, and the platinum boat was kept for 24 hoursin a temperature gradient furnace and was then taken out of the furnace.At this time, a highest temperature at which devitrification(devitrified stones) was observed with a microscope in glass wasmeasured. The liquidus viscosity (log η at TL) is a value measured for aviscosity at the liquidus temperature by a platinum sphere pull upmethod, and is logarithmically represented as log η.

The Young's modulus (E) is a value calculated by a method in conformitywith JIS R1602-1995 “Testing methods for elastic modulus of fineceramics.”

The fracture toughness K_(1C) is a value calculated by a method inconformity with JIS R1607-2015 “Testing methods for fracture toughnessof fine ceramics at room temperature.”

The acid resistance test is evaluated as described below. A glass samplehaving been subjected to mirror polishing treatment on both sides so asto give dimensions of 50 mm×10 mm×1.0 mm was used as a measurementsample. The sample was sufficiently washed with a neutral detergent andpure water, and was then immersed in a 5 mass % HCl aqueous solutionwarmed to 80° C. for 24 hours. In this case, a mass loss (mg/cm²) perunit surface area before and after the immersion was calculated.

The alkali resistance test is evaluated as described below. A glasssample having been subjected to mirror polishing treatment on both sidesso as to give dimensions of 50 mm×10 mm×1.0 mm was used as a measurementsample. The sample was sufficiently washed with a neutral detergent andpure water, and was then immersed in a 5 mass % NaOH aqueous solutionwarmed to 80° C. for 6 hours. In this case, a mass loss (mg/cm²) perunit surface area before and after the immersion was calculated.

As apparent from the tables, it is conceived that each of Sample Nos. 1to 361 has an average linear thermal expansion coefficient within thetemperature range of from 30° C. to 380° C. of 39.6×10⁻⁷/° C. or moreand 107.4×10⁻⁷/° C. or less, a Young's modulus of 63 GPa or more, and afracture toughness K_(1C) of 0.91 MPa·m^(0.5) or more, and is hence lessliable to cause a dimensional change of the substrate to be processedand less liable to be broken at the time of dropping.

Subsequently, each of the glass substrates was subjected to ion exchangetreatment by being immersed in a KNO₃ molten salt at 430° C. for 4hours. Thus, a tempered glass substrate having a compressive stresslayer in a glass surface was obtained. After that, the glass surface waswashed, and the compressive stress value (CS_(K)) and the depth of layer(DOL_ZERO_(K)) of the compressive stress layer on the outermost surfacewere calculated based on the number of interference fringes observedwith a surface stress meter FSM-6000 (manufactured by Orihara IndustrialCo., Ltd.) and intervals therebetween. Herein, the “DOL_ZERO_(K)” is adepth at which the compressive stress value becomes zero. In calculationof the stress characteristics, the refractive index and the opticalelastic constant of each sample were set to 1.51 and 30.1 [(nm/cm)/MPa],respectively.

In addition, each of the glass substrates was subjected to ion exchangetreatment by being immersed in a NaNO₃ molten salt at 380° C. for 1hour. Thus, a tempered glass substrate was obtained. After that, theglass surface was washed, and the compressive stress value (CS_(Na)) andthe depth of layer (DOL_ZERO_(Na)) of the compressive stress layer onthe outermost surface were calculated based on a retardationdistribution curve observed with a scattered light photoelastic stressmeter SLP-1000 (manufactured by Orihara Industrial Co., Ltd.). Herein,the “DOL_ZERO_(Na)” is a depth at which the stress value becomes zero.In calculation of the stress characteristics, the refractive index andthe optical elastic constant of each sample were set to 1.51 and 30.1[(nm/cm)/MPa], respectively.

As apparent from the tables, it is conceived that each of Sample Nos. 1to 361, which has a compressive stress value (CS_(K)) of the compressivestress layer on the outermost surface of 473 MPa or more when havingbeen subjected to the ion exchange treatment with the KNO₃ molten salt,and has a compressive stress value (CS_(Na)) of the compressive stresslayer on the outermost surface of 165 MPa or more when having beensubjected to the ion exchange treatment with the NaNO₃ molten salt, canbe subjected to ion exchange treatment with any of these molten salts,and is less liable to be broken at the time of dropping.

Example 2

First, glass raw materials were blended so as to give glass compositionsof Sample Nos. 2 and 34 shown in Table 1, and were melted at 1,600° C.for 21 hours with a platinum pot. Subsequently, the resultant moltenglass was poured out on a carbon sheet and formed into a flat sheetshape, followed by being cooled in a temperature region of from anannealing point to a strain point at a rate of 3° C./min. Thus, a glasssubstrate was obtained. The surface of the resultant glass substrate wasoptically polished so as to give a sheet thickness of 0.7 mm for SampleNo. 2, and a sheet thickness of 0.8 mm for Sample No. 34.

Next, the glass substrate was subjected to ion exchange treatment bybeing immersed in a NaNO₃ molten salt (concentration of NaNO₃: 100 mass%) at 380° C. for 3 hours, and was then subjected to ion exchangetreatment by being immersed in a mixed molten salt of KNO₃ and LiNO₃(concentration of LiNO₃: 2.5 mass %) at 380° C. for 75 minutes. Further,the surface of the resultant tempered glass substrate was washed, andthen the stress profile of the tempered glass substrate was measuredwith a scattered light photoelastic stress meter SLP-1000 (manufacturedby Orihara Industrial Co., Ltd.) and a surface stress meter FSM-6000(manufactured by Orihara Industrial Co., Ltd.). As a result, the samenon-monotonic stress profile as in FIG. 4 , that is, a stress profilehaving a first peak, a second peak, a first bottom, and a second bottomwas obtained in each case.

Example 3

First, glass raw materials were blended so as to give glass compositionsof Sample Nos. 108 and 145 shown in Table 5, and were melted at 1,600°C. for 21 hours with a platinum pot. Subsequently, the resultant moltenglass was poured out on a carbon sheet and formed into a flat sheetshape, followed by being cooled in a temperature region of from anannealing point to a strain point at a rate of 3° C./min. Thus, a glasssubstrate was obtained. The surface of the resultant glass substrate wasoptically polished so as to give a sheet thickness of 0.7 mm.

Next, the glass substrate was subjected to ion exchange treatment bybeing immersed in a NaNO₃ molten salt (concentration of NaNO₃: 100 mass%) at 380° C. for 3 hours, and was then subjected to ion exchangetreatment by being immersed in a mixed molten salt of KNO₃ and LiNO₃(concentration of LiNO₃: 1.5 mass %) at 380° C. for 45 minutes. Further,the surface of the resultant tempered glass substrate was washed, andthen the stress profile of the tempered glass substrate was measuredwith a scattered light photoelastic stress meter SLP-1000 (manufacturedby Orihara Industrial Co., Ltd.) and a surface stress meter FSM-6000(manufactured by Orihara Industrial Co., Ltd.). As a result, the samenon-monotonic stress profile as in FIG. 5 , that is, a stress profilehaving a first peak, a second peak, a first bottom, and a second bottomwas obtained in each case. Accordingly, it is expected that theresultant tempered glass substrate has a low breakage probability at thetime of dropping.

Example 4

First, a glass batch obtained by blending glass raw materials so as togive a glass composition shown in the table was loaded into a platinumcrucible, followed by being melted at 1,500° C. to 1,700° C. for 24hours, fined, and homogenized. At the time of melting of the glassbatch, the batch was homogenized by being stirred with a platinumstirrer. Next, the molten glass was poured out on a carbon sheet andformed into a sheet shape, followed by being annealed at a temperaturearound an annealing point for 30 minutes.

Subsequently, the glass substrates according to Sample Nos. 1 to 361were each processed into 000 mm×0.8 mm in thickness, and both surfacesthereof were then subjected to polishing treatment with a polishingdevice. Specifically, both the surfaces of the glass substrate weresandwiched between a pair of polishing pads having different outerdiameters, and both the surfaces of the glass substrate were subjectedto polishing treatment while the glass substrate and the pair ofpolishing pads were rotated together. The polishing treatment wascontrolled so that part of the glass substrate sometimes protruded fromthe polishing pads. The polishing pads were each made of urethane, apolishing slurry used for the polishing treatment had an averageparticle diameter of 2.5 μm, and a polishing rate was 15 m/min. Theresultant glass substrates having been subjected to the polishingtreatment were each measured for a total thickness variation (TTV) and awarpage level with SBW-331ML/d manufactured by Kobelco ResearchInstitute, Inc. As a result, the total thickness variation (TTV) and thewarpage level of each of the glass substrates were found to be 0.38 μmand 28 μm, respectively. The glass substrates were each conceived to besuitable as the support glass substrate.

INDUSTRIAL APPLICABILITY

The support glass substrate of the present invention is suitable as asupport glass substrate for manufacturing a WLP or a PLP. The supportglass substrate of the present invention is expected to be applied toapplications for which high mechanical strength is required, forexample, a window glass, a substrate for a magnetic disk, a substratefor a flat panel display, a substrate for a flexible display, a coverglass for a solar cell, a cover glass for a solid state image sensor,and a cover glass for an automobile, in addition to the above-mentionedapplications.

REFERENCE SIGNS LIST

-   1, 27, 30 laminated substrate-   10, 26, 31 support glass substrate-   11, 24, 34 substrate to be processed-   12, 32 peeling layer-   13, 21, 25, 33 adhesive layer-   20 supporting member-   22, 35 semiconductor chip-   23 sealing material-   28 wiring-   29 solder bump-   36 polishing device-   37 UV light

1. A support glass substrate for supporting a substrate to be processed,the support glass substrate comprising lithium aluminosilicate-basedglass, having a content of Li₂O of from 0.02 mol % to 25 mol % in aglass composition, and having an average linear thermal expansioncoefficient within a temperature range of from 30° C. to 380° C. of38×10⁻⁷/° C. or more and 160×10⁻⁷/° C. or less.
 2. The support glasssubstrate for supporting a substrate to be processed according to claim1, wherein the support glass substrate comprises as the glasscomposition, in terms of mol %, 50% to 80% of SiO₂, 4% to 25% of Al₂O₃,0% to 16% of B₂O₃, 0.9% to 15% of Li₂O, more than 0% to 21% of Na₂O, 0%to 15% of K₂O, 0% to 10% of MgO, 0% to 10% of ZnO, and 0% to 15% ofP₂O₅.
 3. The support glass substrate according to claim 1, wherein thesupport glass substrate satisfies the following relationship: a molarratio ([Na₂O]—[Li₂O])/([Al₂O₃]+[B₂O₃]+[P₂O₅])≤1.50.
 4. The support glasssubstrate according to claim 1, wherein the support glass substratesatisfies the following relationship: a molar ratio([B₂O₃]+[Na₂O]—[P₂O₅])/([Al₂O₃]+[Li₂O])≥0.001.
 5. The support glasssubstrate according to claim 1, wherein the support glass substratecomprises 12 mol % or more of ([Li₂O]+[Na₂O]+[K₂O]), and satisfies thefollowing relationship:[SiO₂]+1.2×[P₂O₅]-3×[Al₂O₃]-2×[Li₂O]-1.5×[Na₂O]—[K₂O]—[B₂O₃]≥−40%. 6.The support glass substrate according to claim 1, wherein the supportglass substrate has a temperature at a viscosity at high temperature of10^(2.5) dPa·s of less than 1,660° C.
 7. The support glass substrateaccording to claim 1, wherein the support glass substrate comprisesoverflow-merged surfaces in a middle portion thereof in a sheetthickness direction.
 8. The support glass substrate according to claim1, wherein the support glass substrate has a mass loss of 100.0 mg/cm²or less per unit surface area when immersed in a 5 mass % HCl aqueoussolution warmed to 80° C. for 24 hours.
 9. The support glass substrateaccording to claim 1, wherein the support glass substrate has a massloss of 5.0 mg/cm² or less per unit surface area when immersed in a 5mass % NaOH aqueous solution warmed to 80° C. for 6 hours.
 10. Thesupport glass substrate according to claim 1, wherein the support glasssubstrate comprises a compressive stress layer in a glass surfacethereof.
 11. A support glass substrate, comprising a compressive stresslayer in a glass surface thereof and comprising as a glass composition,in terms of mol %, 50% to 80% of SiO₂, 4% to 25% of Al₂O₃, 0% to 16% ofB₂O₃, 0.9% to 15% of Li₂O, more than 0% to 21% of Na₂O, 0% to 15% ofK₂O, 0% to 10% of MgO, 0% to 10% of ZnO, and 0% to 15% of P₂O₅.
 12. Thesupport glass substrate according to claim 10, wherein the compressivestress layer has a compressive stress value of from 165 MPa to 1,000 MPaon an outermost surface.
 13. The support glass substrate according toclaim 10, wherein the compressive stress layer has a depth of layer offrom 50 μm to 200 μm.
 14. The support glass substrate according to claim1, wherein the support glass substrate comprises a compressive stresslayer in a glass surface thereof, comprises, as the glass composition,17 mol % or more of Al₂O₃, 1 mol % or more of P₂O₅, and 12 mol % or moreof ([Li₂O]+[Na₂O]+[K₂O]), and satisfies the following relationship:[SiO₂]+1.2 [P₂O₅]-3×[Al₂O₃]-2×[Li₂O]-1.5×[Na₂O]—[K₂O]—[B₂O₃]≥−20 mol %.15. The support glass substrate according to claim 10, wherein thesupport glass substrate has a stress profile having at least a firstpeak, a second peak, a first bottom, and a second bottom in a thicknessdirection.
 16. The support glass substrate according to claim 1, whereinthe support glass substrate has a wafer shape or a substantially discshape having a diameter of from 100 mm to 500 mm, has a sheet thicknessof less than 2.0 mm, has a total thickness variation (TTV) of 5 μm orless, and has a warpage level of 60 μm or less.
 17. The support glasssubstrate according to claim 1, wherein the support glass substrate hasa substantially rectangular shape of □200 mm or more, has a sheetthickness of 1.0 mm or more, and has a total thickness variation (TTV)of 30 μm or less.
 18. The support glass substrate according to claim 17,wherein the support glass substrate has a corner angle of from 89.0° to91.0° when seen from above.
 19. The support glass substrate according toclaim 1, wherein the support glass substrate comprises a positioningportion in an outer peripheral portion thereof.
 20. The support glasssubstrate according to claim 19, wherein the positioning portion has anyone of a notch structure, a chamfer structure, and a cutout structure.21. A laminate, comprising at least a substrate to be processed and asupport glass substrate for supporting the substrate to be processed,wherein the support glass substrate is the support glass substrateaccording to claim
 1. 22. The laminate according to claim 21, whereinthe substrate to be processed comprises at least a semiconductor chipmolded with a sealing material.
 23. A method of manufacturing asemiconductor package, comprising the steps of: preparing a laminatecomprising at least a substrate to be processed and a support glasssubstrate for supporting the substrate to be processed; and subjectingthe substrate to be processed to processing treatment, wherein thesupport glass substrate is the support glass substrate according toclaim
 1. 24. The method of manufacturing a semiconductor packageaccording to claim 23, wherein the step of subjecting the substrate tobe processed to processing treatment comprises arranging wiring on onesurface of the substrate to be processed.
 25. The method ofmanufacturing a semiconductor package according to claim 23, wherein thestep of subjecting the substrate to be processed to processing treatmentcomprises forming a solder bump on one surface of the substrate to beprocessed.
 26. A glass substrate, comprising as a glass composition, interms of mol %, 50% to 65% of SiO₂, 8% to 25% of Al₂O₃, 0% to 10% ofB₂O₃, 5.1% to 20% of Li₂O, more than 10% to 16.1% of Na₂O, 0% to 15% ofK₂O, 0.01% to 3% of MgO, 0% to 10% of CaO, and 0.01% to 10% of ZrO₂, andhaving a Young's modulus of 80 GPa or more.
 27. A glass substrate,comprising as a glass composition, in terms of mol %, 50% to 65% ofSiO₂, 8% to 18% of Al₂O₃, 0% to 10% of B₂O₃, 20% to 25% of Li₂O, 0.01%to 10% of Na₂O, 0% to 15% of K₂O, 0% to 10% of MgO, 0.01% to 10% of CaO,and 0% to 10% of ZrO₂, having a Young's modulus of 85 GPa or more, andhaving a fracture toughness K_(1C) of 0.80 MPa·m^(0.5) or more.
 28. Aglass substrate, comprising as a glass composition, in terms of mol %,64% to 76% of SiO₂, 4% to 15% of Al₂O₃, 4% to 16% of B₂O₃, 0.1% to 14%of Li₂O, 0.01% to 14% of Na₂O, 0% to 15% of K₂O, 0% to 7% of MgO, 0% to7% of CaO, 0% to 7% of SrO, 0% to 7% of BaO, and 0% to 10% of ZrO₂,having a Young's modulus of 60 GPa or more, and having an average linearthermal expansion coefficient within a temperature range of from 30° C.to 380° C. of 38×10⁻⁷/° C. or more and 85×10⁻⁷/° C. or less.
 29. Theglass substrate according to claim 28, wherein the glass substratecomprises as the glass composition, in terms of mol %, 0.01% to 7% ofMgO and 0.01% to 7% of CaO.
 30. The glass substrate according to claim28, wherein the glass substrate comprises as the glass composition, interms of mol %, 0.01% to 7% of SrO.
 31. The glass substrate according toclaim 28, wherein the glass substrate comprises as the glasscomposition, in terms of mol %, 0.01% to 7% of MgO, 0.01% to 7% of CaO,and 0.01% to 7% of SrO.
 32. The glass substrate according to claim 28,wherein the glass substrate comprises as the glass composition, in termsof mol %, 1.5% to 8.5% of Li₂O, 0.01% to 7% of MgO, 0.01% to 7% of CaO,and 0.01% to 7% of SrO.